150N3 Search Results

IXGQ150N33TC

Abstract: IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150
Contextual Info: 150N33TC 150N33TC 150N33TCD1 Trench Gate High Speed IGBT VCES = ICP = VCE sat ≤ 330V 400A 1.8V For PDP Applications 150N33TC 150N33TCD1 TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 330 V VGEM Transient ± 30

STD150N3LLH6

Abstract: 150N3LLH6 STP150N3LLH6 stp150n3 TO-251 footprint STU150N3LLH6
Contextual Info: 150N3LLH6 150N3LLH6, 150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 150N3LLH6 30 V 0.0028 Ω 80 A 150N3LLH6 30 V 0.0033 Ω 80 A 150N3LLH6 30 V 0.0033 Ω

Contextual Info: 150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS 150N3LLH5 30 V RDS on max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: 150N3LLH5 N-channel 30 V, 0.0014 Ω typ., 35 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max. ID 150N3LLH5 30 V 0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb

STD150N3LLH6

Abstract: STU150N3LLH6 150N3 095B4 JESD97 150N3LLH6 std150n3
Contextual Info: 150N3LLH6 150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK STripFET VI DeepGATE™ Power MOSFET Preliminary Data Features Type VDSS RDS on max ID 150N3LLH6 30 V 0.0028 Ω 80 A 150N3LLH6 30 V 0.0033 Ω 80 A • 3 RDS(on) * Qg industry benchmark

390p-39n

Abstract: 15N-220
Contextual Info: Note: Y5V dielectric is not dual rated at 63V Copyright Syfer Technology Limited - 1998. SIZE 0603 0805 1206 1210 1808 2220 2225 16V C0G 390P-1.2N X7R 100V 200/250V 390P-1.0N 0.5P-470P 1.0P-330P 1.0P-100P 22N-100N 330P-56N 330P-47N 100P-10N 100P-5.6N Y5V

MBM27C1000-20

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 374=!7b2 OOCHEIO b 23E D CMOai.048,576.BI UV ERASABLE REAI ONLY MEMOR MBM27C1000-15 MBM27C1000-20 MBM27C1000-25 April 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM The Fujitsu MBM27C1000 EPROM Is a high speed read-only static mem ory th a t Is

150N3

Abstract: BSO150N03
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications • N-channel

STL150N3LLH6

Contextual Info: 150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT 6x5 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID 150N3LLH6 30 V 0.0024 Ω 33 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■

IECQ-CECC and MIL grade ranges

Abstract: IECQ-CECC Range
Contextual Info: Surface mount capacitors 1.1 - Production process flowchart Ceramic powder preparation 1.1 to 1.3 1.2 - Syfer reliability grades Electrode ink material Space Grade ESCC 3009 1 (wet process) MIL Grade(2) IECQ-CECC(3) AEC-Q200(4) Fire Standard components Multilayer build

STL150N3LLH5

Contextual Info: 150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS 150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

STL150N3LLH6

Abstract: AM040 150N3
Contextual Info: 150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID 150N3LLH6 30 V 0.002 Ω 33 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

150N3

Abstract: BSO150N03 JESD22
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1 • Qualified according to JEDEC for target applications • Dual n-channel

Contextual Info: 150N3LH6 N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET VI DeepGATE™ Power MOSFET in D²PAK package Datasheet — production data Features Order code VDSS RDS on max ID(1) PTOT 150N3LH6 30 V 3.0 mΩ 80 A 110 W 1. Current limited by package. •

STL150N3LLH6

Contextual Info: 150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT 6x5 STripFET™ VI DeepGATE™ Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID 150N3LLH6 30 V 0.002 Ω 33 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark

military passive component

Abstract: MIL-PRF-28861 330P CAPACITOR X7R 10n 2KV Y cap 33nF 250V Bp c0g 150pf 6kv arinc 404 capacitor 0805 63V 470nF capacitor 220p
Contextual Info: MIL grade surface mount capacitors AEC-Q200 qualified surface mount capacitors IECQ-CECC qualified surface mount capacitors Space grade surface mount capacitors Planar arrays and discoidals Radial capacitors Filter products 2nd Edition Introduction Syfer Technology Ltd manufactures quality

X7R 10n 2KV

Abstract: 10p-820p 470n 630v 100p-33n 10n12 10p-560n
Contextual Info: Surface mount capacitors Quick Reference Guide Standard product ranges - 10V to 6kV ranges = X5R Range Capacitance values F. 0603 0805 1206 1210 1808 1812 1825 2220 2225 3640 5550 8060 0.47p-3.9n 1.0p-15n 1.0p-47n 3.9p-100n 4.7p-100n 10p-220n 10p-470n 10p-470n

150N3

Abstract: MARKING 150N3 BSO150N03 IEC61249-2-21 JESD22
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications PG-DSO-8

hv4274

Abstract: STL150N3LLH5
Contextual Info: 150N3LLH5 N-channel 30 V - 0.0014 Ω - 35 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS 150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

MARKING 150N3

Abstract: 150n3
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 15 mΩ ID 9.1 A 1) • Qualified according to JEDEC for target applications • N-channel

150n3

Abstract: BSO150N03
Contextual Info: BSO150N03 OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 15 mΩ ID 9.1 A • Dual n-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)

STL150N3LLH5

Abstract: 150N3LLH5
Contextual Info: 150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS 150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)