G150N Search Results

g150n

Abstract: G150N50W4B -Anaren transistor w4B G150N50W4B
Contextual Info: ROHS Compliant Model G150N50W4B Flange Mount Termination 150 Watts, 50Ω Description The G150N50W4B is high performance Aluminum Nitride AlN flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands

G150N50W4A

Contextual Info: ROHS Compliant Model G150N50W4A Flange Mount Termination 150 Watts, 50Ω Description The G150N50W4A is high performance Aluminum Nitride AlN flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands

Contextual Info: Model G150N50W4E Flange Mount Termination 150 Watts, 50Ω Description The G150N50W4E is high performance Aluminum Nitride AlN flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands

g150n

Abstract: G150N50W4B -Anaren G150N50W4B
Contextual Info: Overview ROHS Compliant Model G150N50W4B Flange Mount Termination 150 Watts, 50Ω Description The G150N50W4B is high performance Aluminum Nitride AlN flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as;

G150N

Contextual Info: Model G150N50W4E Flange Mount Termination 150 Watts, 50Ω Description The G150N50W4E is high performance Aluminum Nitride AlN flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands

g150n

Abstract: G150N50W4B
Contextual Info: ROHS Compliant Model G150N50W4B Flange Mount Termination 150 Watts, 50Ω Description The G150N50W4B is high performance Aluminum Nitride AlN flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands

Contextual Info: Model G150N50W4E Flange Mount Termination 150 Watts, 50Ω Description The G150N50W4E is high performance Aluminum Nitride AlN flange mount termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands

2.4ghz lnb

Abstract: 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter
Contextual Info: Selection Matrix 3 dB Hybrid Couplers Model Number Package Size [Inch] Freq. Band [MHz] Ins. loss [dB max] Isolation [dB min] VSWR [max:1] ± Amp. Bal. [dB max] 90 ± Ph. Bal [deg. max] Avg. Power [W max] XC0450A-03 XC0450L-03

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series