IXGQ150N33TC
Abstract: IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150
Contextual Info: IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 Trench Gate High Speed IGBT VCES = ICP = VCE sat ≤ 330V 400A 1.8V For PDP Applications 150N33TC 150N33TCD1 TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 330 V VGEM Transient ± 30
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ixga150n33tcixgq150n33tcixgq150n33tcd1150n33tc+7150n33tcd1o-2639-04-08-bsiemens igbt 75ag150nixga150ixgq150
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LTED
Abstract: TO-238
Contextual Info: _ 4686226 _ - , _ - I X Y S CORP D Ë J HbBbEEb . □ □ D O lb S — ^ -7 * - 3 ^ - / 3 H MOSBLOCIGBT Phase-Leg Modules Inverter Series High Speed Part Number CollectorVoltage Vces (Volts) Collector Current Id @ 25 °C Case lc(conl) IC (P u lted ) (Amps)
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ixgq200n100y3ixgq150n100y3ixgq100n100y3ixgq200n60y3+8ixgq150n60y3ixgq75n100y4ixgq50n100y4ixgq25n100y4ixgq100n60y4ixgq75n60y4ltedto-238
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DIN 46249 TERMINALS
Abstract: ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4
Contextual Info: I X Y S CORP IS E D 4ti8b25fcj O O O O S S O T ]\/[OSBLOC MODULES The MOSBLOC family of isolated modules are designed for high power industrial and commercial applica tions requiring improved ruggedness and efficiency. They are available with either IXYS* advanced MOSIGBTs
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4ti8b25fcjdin 46249 terminalsixgn50n1001xgq150n6qy3+1ixgq50n100y4
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IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
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d-68623ixbod1-08ixbod1-09ixbod1-10+12dsep30-06brdsep30-12crixgp70n33ixgq90n33sk0604ixtp76n075ixer35n120d1ixgp70n33tbm-adh60-18avbo19sk0712ixth1n250
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