150DE Search Results

Contextual Info: CDMC10D50/T150 Features • Metal compound molding type construction. • Magnetically shielded. • Qualified AEC-Q200 • Suitable for Large Current • Operating temperature range: - 40deg C～+150deg C including coil’s self temperature rise Applications

Contextual Info: CDMC50D38/T150 Features • Metal compound molding type construction. • Magnetically shielded. • Qualified AEC-Q200 • Suitable for Large Current • Operating temperature range: - 40deg C～+150deg C including coil’s self temperature rise Applications

alternator LIN protocol 2.0

Abstract: voltage regulation of alternator using microcontroller LIN 2.0 alternator ecu alternator voltage regulator TC80310 Alternator regulator lin protocol specification automotive alternator voltage regulator LIN alternator diode numbers ISO-7637-1 alternator circuit diagram
Contextual Info: Freescale Semiconductor Advance Information Document Number: TC80310 Rev 3.0, 8/2012 Alternator Regulator with LIN 80310 The 80310 is an integrated circuit intended to regulate the output voltage of an automotive alternator. The IC supplies a current via a high side MOSFET to the excitation

GRM31 Murata

Abstract: CC195 ST1S40 h3dg qp2n ST1S40IPUR MURATA GRM31 C3225X7RE106K ST1S40IDR s08b
Contextual Info: ST1S40 3 A DC step-down switching regulator Features • 3 A DC output current ■ 4.0 V to 18 V input voltage ■ Output voltage adjustable from 0.8 V ■ 850 kHz switching frequency ■ Internal soft-start ■ Integrated 95 mΩ and 69 mΩ Power MOSFETs ■

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

optical sensor

Abstract: amplifire Circuit current amplifire circuit diagram 5v infrared camera
Contextual Info: Visible Radiant Optical Sensor /Data Sheet TDK Visible Radiant Optical Sensor is the photo-IC which uses an amorphous silicone semiconductor technology. It is the most suitable for Brightness Adjustment, Control of the Lighting systems. BCS2015A1 has currentamplifire in it. BCS2015A1 is for surface mounthing.

Contextual Info: Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0100 Rev.1.00 Mar 1, 2013 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.

circuit diagram of luminous inverter

Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances

BC337A

Contextual Info: BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

RD02MUS1

Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MVS1

Abstract: RD07MVS1-101 T112 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor

RD07MVS1

Abstract: RD07MVS1B T112 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05

RD30HVF1

Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD01MUS1-101

Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

100OHM

Abstract: RD30HUF1
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

Ceramic Capacitors 104

Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Contextual Info: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.

BCY58

Abstract: TYP50 BCY59 X10-4 BCY58-7 BCY58-9 bcy58-8 BCY581 cdil bcy58-8 BCY588
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS

Contextual Info: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted

pn4117a

Contextual Info: PN4117A PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources. • Sourced from process 53.

MLX91206

Abstract: 952 hall sensor
Contextual Info: MLX91206 Triaxis Current Sensor IC Features and Benefits Application Examples Programmable high speed current sensor IC Wideband: DC to 90kHz Short response time Tria⊗is hall technology Programmable linear transfer characteristic Selectable analog ratiometric output

d10n05

Abstract: IN5240B RFD10N05SM RFD10N05 AN7254 AN7260 92CS-42660
Contextual Info: Power MegaFETs- RFD10N05, RFD10N05SM File N um b er 2107 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 10 A , 50 V rD s (o n ) = 0 .1 f i N -C H A N N E L E N H A N C E M E N T M OD E Features: • S ingle pu lse avalanche e n ergy ra ted

Tyre pressure monitoring system block diagram

Abstract: lanskroun avx taj AVX Tantalum Electrolytic Capacitors TS16949 electronic control unit engine Automotive capacitors electronic stability control cars tyre pressure monitoring airbag
Contextual Info: Tantalum and OxiCap niobium oxide capacitors deliver enhanced reliability, wide temperature range and low leakage for automotive applications R. Faltus AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic email: radovan.faltus@eur.avx.com