150 WATT AMPLIFIER Search Results

TL2012

Abstract: TRANSISTOR tl131 C801 C802 C803 R250 8C802 tl1252 TL1-16 ATC 221
Contextual Info: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier

PTFA041501E

Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
Contextual Info: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

2SC5200

Contextual Info: 2SC5200 2SC5200 Pb Free Plating Product Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage

2SA1943

Contextual Info: 2SA1943 Pb Free Plating Product 2SA1943 Pb 150 Watt Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5200 APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage

Contextual Info: TERMINATION FLANGE MOUNT 150 WATT DATA SHEET PART NUMBER: 32-1003 FEATURES EN 11-0656 07/15/2011 SHEET 1 OF 1 APPLICATIONS Tab Launch High Power Integrated Heat Sink Low VSWR Mobile Networks Broadcast High Power Amplifiers Instrumentation Isolators Military

Contextual Info: KSC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS • Complement to KSA928A • Collector Dissipation PC=1 W • 3 Watt Output Application ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Rating Unit VcBO 30 30 5 2 1 150

SMT252503ALN2F

Contextual Info: TERMINATION SURFACE MOUNT 150 WATT DATA SHEET PART NUMBER: SMT252503ALN2F FEATURES Low Profile Surface Mount High Power Aluminum Nitride Substrate Low VSWR Ideal For Automated Assembly EN 11-1034 09/19/11 SHEET 1 OF 1 APPLICATIONS Mobile Networks Broadcast

MSCQ02

Abstract: module
Contextual Info: polyfet rf devices MSCQ02 RF Power Module Power = 150.0 Watts Bandwidth = 30 to 512 Mhz Gain = 17.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MSCQ02 is a 150 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

gammatron

Abstract: audio amplifier 2400 watt vacuum tube amplifier 400 watt audio amplifier heintz 810 audio amplifier
Contextual Info: CAMMATRON type 354 GENERAL PURPOSE TRIODE 150 watt radiation cooled triode, available in two amplification factors: The C a low mu of 14 and the E a high mu of 35. Exceptional HF performance and ability to withstand high voltages. PHYSICAL DATA Tantalum

Fujitsu GaAs FET Amplifier design

Abstract: FLL1500IU-2A FLL1500 Fujitsu GaAs FET Amplifier
Contextual Info: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that

FLL1500IU-2C

Abstract: eudyna GaAs FET Amplifier
Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that

FLL1500IU-2C

Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that

2N512

Abstract: Texas Germanium 2N512B 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power
Contextual Info: TYPES 2N512, 2N512A, AND 2N512B P-N-P ALLOY-JUNCTION GERMANIUM HIGH-POWER TRANSISTORS T Y P E S 2N 512, 2 N 512A , and 2 N 5 1 2 B B U L L E T IN NO. DL-S 611472, MARCH 4 0 , 60, or 80 VOLTS 15-Amp Collector Current 150-Watt Dissipation LOW lco LOW VK LOW THERMAL RESISTANCE

ELMWOOD SENSORS

Abstract: AN1308 500 watts 12 VOLTS audio amplifier schematics 500 watts audio amplifier schematics 1000 watts audio amplifier schematics elmwood sensors ltd 300 watts amplifier schematics Motorola design of audio amplifier an1308 12 volt audio amplifier class D schematic ELMWOOD
Contextual Info: Order this document by AN1308/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE 100 and 200 Watt High Fidelity Audio Amplifiers Utilizing a WidebandĆLow Feedback Design AN1308 Prepared by: Andrew Hefley Audio Engineering Consultant INTRODUCTION Over the past two decades many types of solid state, high

LY8891

Contextual Info: LY8891 1.0 Watt Audio power Amplifier Rev. 1.4 FEATURES GENERAL DESCRIPTION 2.5V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No capacitors and networks or bootstrap capacitors required „ Low noise during turn-on and turn-off transitions

LY8890

Abstract: LYONTEK
Contextual Info: LY8890 1.0 Watt Audio power Amplifier Rev. 1.5 FEATURES GENERAL DESCRIPTION 2.5V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No capacitors and networks or bootstrap capacitors required „ Low noise during turn-on and turn-off transitions

Contextual Info: LY8891 1.0 Watt Audio power Amplifier Preliminary. 1.3 FEATURES GENERAL DESCRIPTION 2.5V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No capacitors and networks or bootstrap capacitors required „ Low noise during turn-on and turn-off transitions

5 Watt S-Band Power Amplifier

Abstract: 2 Watt S-Band Power Amplifier s-band 50 Watt power amplifier S-band mmic Watt AM42-0055 CR-15 amplifier 1000 watt HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz S-Band Power Amplifier
Contextual Info: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched 1 -C.70 .530 .085 10 10X .050 MIN.

Contextual Info: 1 Watt/2 Watt S-Band Power Amplifier AM42-0055 2.2 - 2.4 GHz V 1P.00 Preliminary Features OUTLINE DRAWING 1 • High Linear Gain: 29 dB typ. • High Saturated Output Power: +33 dBm typ. • 50 Ohm Input/Output Broadband Matched -C.70 .530 .085 10 10X .050 MIN.

LY8896

Abstract: 300 Watt Amplifier IC audio power amplifier 500 watt
Contextual Info: LY8896 1.4 Watt Audio Power Amplifier Rev. 1.2 FEATURES GENERAL DESCRIPTION 2.5V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No output capacitors and networks or bootstrap capacitors required „ Low noise during turn-on and turn-off transitions

Contextual Info:  LY8891 2.0 Watt Audio Power Amplifier Rev. 1.8 FEATURES GENERAL DESCRIPTION 2.0V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No output capacitors and networks or bootstrap capacitors required  Low noise during turn-on and turn-off transitions

Rogers 4350

Abstract: HMC454ST89
Contextual Info: HMC454ST89 v02.0404 MICROWAVE CORPORATION InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC454ST89 is ideal for applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE

HMC455LP3

Contextual Info: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB

100 watt audio amplifier

Contextual Info: LY8895 Rev. 1.4 1.4 Watt Audio power Amplifier FEATURES GENERAL DESCRIPTION 2.5V~5.5V Power supply. Thermal shutdown Protection. Low current shutdown mode No capacitors and networks or bootstrap capacitors required „ Low noise during turn-on and turn-off transitions