15 VOLTS AMPLIFIER Search Results

2N1163

Abstract: 2N1165 2N1167 2N2553 2N2552 2N2669 2N2556 2N1163A A6540 2N1167A
Contextual Info: germanium power transistors PNP TO-41 = 10 to 50A h fE @ Ic / V c e V c e o s u s V ebo Type# (Volts) (Volts) 2N1163 2N1163A 2N1165 2N1165A 2N1167 2N1167A 25 25 35 40 45 50 20 25 25 40 30 50 (Min-Max @ A/V) 15-65@25/l 15-65 25/l 15-65@25/l 15-65®25/l

mbd5300

Abstract: mbd-5300 2N6487 MSD6100
Contextual Info: 2N6487 NPH POWER TRANSISTORS 60 VOLTS 15 AMP, 75 WATTS These are designed for use in general-purpose amplifier and switching applications. NPN COLLECTOR Features: • DC Current Gain specified to 15 Amperes hFE = 20-150 @ IQ = 5.0 A = 5.0 Min @ lc = 15 A

CHEMZ8GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Silicon Transistor NPN:VOLTAGE 60 Volts PNP:VOLTAGE 15 Volts CHEMZ8GP CURRENT 150 mAmpere CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE * Small surface mounting type. SOT-563 SOT-563 * PC= 150mW (Total),120mW per element must not be exceeded.

CA28

Abstract: SMA28
Contextual Info: A28/SMA28 10 TO 1500 MHz CASCADABLE AMPLIFIER •HIGH OUTPUT LEVEL: +15 dBm TYP. ·HIGH THIRD ORDER I.P.: +29 dBm (TYP.) ·WIDE POWER SUPPLY RANGE: Typical Performance @ 25°C +5 TO +15 VOLTS Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency

Contextual Info: WJ-A67 / SMA67 10 to 800 MHz TO - 8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH EFFICIENCY: +16.0 dBm TYP. OUTPUT POWER @ 32 mA (TYP.) ♦ LOW NOISE FIGURE: < 4.0 dB (TYP.) ♦ WIDE POWER SUPPLY RANGE: 5 VOLTS TO 15 VOLTS Outline Drawings

TRANSISTOR A67

Abstract: CA67 SMA67
Contextual Info: A67/SMA67 10 TO 800 MHz TO-8 CASCADABLE AMPLIFIER • AVAILABLE IN SURFACE MOUNT · HIGH EFFICIENCY +16 dBm TYP. OUTPUT POWER @ 32 mA (TYP.) · LOW NOISE FIGURE <4.0 dB (TYP.) · WIDE POWER SUPPLY RANGE 5 VOLTS TO 15 VOLTS Specifications (Rev. Date: 2/02)*

Contextual Info: A67/SMA67 10 TO 800 MHz TO-8 CASCADABLE AMPLIFIER • AVAILABLE IN SURFACE MOUNT · HIGH EFFICIENCY +16 dBm TYP. OUTPUT POWER @ 32 mA (TYP.) · LOW NOISE FIGURE <4.0 dB (TYP.) · WIDE POWER SUPPLY RANGE 5 VOLTS TO 15 VOLTS Specifications (Rev. Date: 2/02)*

CA37

Abstract: SMA37
Contextual Info: A37/SMA37 10 TO 2000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT LEVEL: +15 dBm TYP. · HIGH THIRD ORDER I.P.: +28 dBm (TYP.) · WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency

Contextual Info: A28/SMA28 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT LEVEL +15 dBm TYP. · HIGH THIRD ORDER I.P. +29 dBm (TYP.) · WIDE POWER SUPPLY RANGE +5 TO +15 VOLTS · AVAILABLE IN SURFACE MOUNT Specifications (Rev. Date: 10/01)* Characteristics Typical Frequency

1838

Abstract: Scans-0017299
Contextual Info: 15 TUNG'SOL PENTODE AMPLIFIER UN I POTENTIAL CATHODE HEATER 2.0 VOLTS 0.220 AMPERE DC GLASS BULB BOTTOM VIEW SMALL 5 PIN BASE THE TUNG-SOL 15 IS A SHARP CUT-OFF PENTODE WITH A HEATER OF LOW POWER DRAIN. OPERATING CONDITIONS AND CHARACTERISTICS CLASS Ai AMPLIFIER

Contextual Info: A76/SMA76 5 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 28 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · HIGH THIRD ORDER IP: +28 dBm (TYP.) · WIDE POWER SUPPLY RANGE: +8 TO +15 VOLTS Specifications (Rev. Date: 6/02)* Characteristics Typical

CA76

Abstract: SMA76
Contextual Info: A76/SMA76 5 TO 500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 28 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · HIGH THIRD ORDER I.P.: +28 dBm (TYP.) · WIDE POWER SUPPLY RANGE: +8 TO +15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)*

Contextual Info: Cascadable Amplifier 10 to 2000 MHz A37/ SMA37 V3 Features Product Image • HIGH OUTPUT LEVEL: +15 dBm TYP. • HIGH THIRD ORDER I.P.: +28 dBm (TYP.) • WIDE POWER SUPLLY RANGE: +5 TO +15 VOLTS Description The A37 RF amplifier is a discrete thin film hybrid design,

NTE37

Abstract: NTE43 NTE50 NTE175 NTE36 NTE42 NTE45 T0126 T066 NTE55
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBo BVCeo BVEbo »FE Pd «T 12 160 140 6 100 100 15 2 400 350 6 50 35 20 7a 0.5 300 300 3 92 20 SIP-5 8a 0.05 100 100 5 400 Min 0.2/Unit 0.4 Total 100

WJ-A28

Abstract: ja28 JCA28
Contextual Info: WJ-A28 / SMA28 j&ÿ • H 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +29 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 T O +15 VOLTS Outline Drawings A28 0.200 (5.08)

Contextual Info: A87-1/SMA87-1 10 TO 400 MHz TO-8 CASCADABLE AMPLIFIER • HIGH OUTPUT LEVEL: +17 dBm TYP. · HIGH EFFICIENCY: 33 mA @ +15 Vdc (TYP.) · HIGH THIRD ORDER IP: +31 dBm (TYP.) · WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Specifications (Rev. Date: 6/02)* Characteristics

SMA66-1

Contextual Info: W J - A 6 6 - 1 / S M A 6 6 - 1 10 to 1000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 VOLTS TO 15 VOLTS

CA28

Abstract: SMA28
Contextual Info: Cascadable Amplifier 10 to 1500 MHz A28/ SMA28 V3 Features • • • • Product Image HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +29 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS AVAILABLE IN SURFACE MOUNT Description The A28 RF amplifier is a discrete thin film hybrid design, which

CHEMX18GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHEMX18GP SURFACE MOUNT Dual Silicon Transistor VOLTAGE 15 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE * Small surface mounting type. SOT-563 * Low saturation voltage VCE(sat)=0.25V(max.)(IC=200mA)

Contextual Info: W J - A 7 6 1 S M A 7 6 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 28 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) HIGH THIRD ORDER I.P.: +28 dBm (TYP.) WIDE POWER SUPPLY RANGE: +8 T O +15 VOLTS

Contextual Info: Cascadable Amplifier 10 to 400 MHz A87-1/ SMA87-1 V3 Features • • • • Product Image HIGH OUTPUT LEVEL: +17 dBm TYP. HIGH EFFICIENCY: 33 mA @ +15 Vdc (TYP.) HIGH THIRD ORDER IP: +31 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Description The A87-1 RF amplifier is a discrete hybrid design, which uses

TIP3055 pin out

Abstract: pin out TRANSISTOR tip2955 TIP3055 application TIP2955 application note TIP2955 NPN power transistor 2N3055 Tip3055 Application Note tip2955 2n3055 east tip3055 tip3055g
Contextual Info: TIP3055 NPN , TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general−purpose switching and amplifier applications. http://onsemi.com Features • DC Current Gain − • • • 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS

MJE1291

Abstract: MJE1660 mje1661 MJE1290 transistor mje Transistor J3T
Contextual Info: MJE1290, MJEl 291 PNP SILICON MJEl 660, MJEl 661 NPN 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 40-60 VOLTS . . . designed for use in power amplifier and switching applications. • High Collector Current —

NSP3867

Contextual Info: TECHNICAL DATA NSP3867 PRELIMINARY 3.0 AMPERE 40 VOLTS MEDIUM-POWER PNP SILICON TRANSISTORS 15 WATTS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO 3.0 AMPERES