15 VOLTS AMPLIFIER Search Results

CA37

Abstract: SMA37
Contextual Info: A37/SMA37 10 TO 2000 MHz CASCADABLE AMPLIFIER • HIGH OUTPUT LEVEL: +15 dBm TYP. · HIGH THIRD ORDER I.P.: +28 dBm (TYP.) · WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency

CA28

Abstract: SMA28
Contextual Info: Cascadable Amplifier 10 to 1500 MHz A28/ SMA28 V3 Features • • • • Product Image HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +29 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS AVAILABLE IN SURFACE MOUNT Description The A28 RF amplifier is a discrete thin film hybrid design, which

1617AB15

Abstract: BVces
Contextual Info: 1617AB15 15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB15 is a COMMON EMITTER transistor capable of providing 15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM BASE STATION

4435 ic

Abstract: data sheet IC 4435 IC 2272 DATASHEET IC 7446 1140-17 02580 2482 TRANSISTOR data sheet ic 7446 IC 7446 A 158314
Contextual Info: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 80143 is a COMMON EMITTER transistor capable of providing 1.0 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

STELLEX

Contextual Info: A80-1/SMA80-1 10 TO 200 MHz CASCADABLE AMPLIFIER • HIGH REVERSE ISOLATION: >32 dB TYP. · VERY LOW NOISE: 2.0 dB (TYP.) · HIGH GAIN: 27.3 dB (TYP.) · HIGH EFFICIENCY: 29 mA AT 15 VOLTS (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)*

15W20

Abstract: MCCQ01
Contextual Info: polyfet rf devices MCCQ01 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 20 to 520 Mhz Gain = 27.0 dB Vdd = 25.0 Volts 50 ohms Input/Output Impedance Description The MCCQ01 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 20-520 Mhz. The operating temperature range

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1263 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION

pentodes

Abstract: RADIOTRON ST-12 1B40 Scans-0017344
Contextual Info: R A D I O T R' ON IK ‘4 PENTODE AM PLIFIER Filament i Voltage Current Maximum Overall Length Maximum diameter Bulb Cap Mounting Position Base «* Pin 1-Filament ♦ ¡Pin 2 -Plate Pin 3-Screen • Coated 2.0 * 0.12 d-c volts amp. 4-15/16" 1-9/76" ST-1 f

rca tube 53

Abstract: 210 radiotron RADIOTRON T-20 LB1944 rca company r18000 VOLTAGE SUPPRESSOR
Contextual Info: R-F POWER AMPLIFIER PENTODE Filament Voltage Current Transconductance Thoriated Tungsten 10 5 for plate current of 6 2 . 5 m a. a-c or d-c volts amp. . pmnos 4000 Direct Interelectrode Capacitances: Grid t o P la te wi th ext ern al s hi e l d i n g 0 .1 5 max.

5902 TUBE

Abstract: 5902 pentode 5902 rs tube subminiature tubes
Contextual Info: 5902 ET-T1099A 5902 P a ge 1 11-56 PENTODE Five-Star Tube TUBES ★ ★ ★ ★ ★ FOR AF POWER AMPLIFIER APPLICATIONS SHOCK, VIBRATION RATINGS HEATER-CYCLING RATING 8-LEAD SUBMINIATURE POWER OUTPUT— 1 WATT DESCRIPTION AND RATING BASING DIAG RAM The 5902 is a subminiature beam power pentode for use as an audio­

Contextual Info: MITSUBISHI HYBRID ICs M57957L HYBRID 1C FOR DRIVING IGBT MODULES Hybrid Integrated Circuit For Driving IGBT Modules Description: M57957L is a hybrid integrated cir­ cuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates

MP4T3243

Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers

DL100-7PCBA

Abstract: DL100-7-CER PSS-DL100-7PCBA
Contextual Info: Data Sheet Pacific Silicon Sensor Inc. PSS-DL100-7PCBA POSITION SENSING PHOTODIODE PSS-DL100-7PCBA The PSS-DL100-7PCBA is a position sensing diode with sum and difference amplifiers. It contains internal bias circuitry of 14.3 volts for the position sensing diode. The

MP4T243

Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages

ITT3502D

Contextual Info: Low Noise Driver Amplifier Die 11.0 – 16.0 GHz ITT3502D FEATURES • • • • • • • CW or Pulsed Operation 2.7 dB Typical Noise Figure 11 dB Typical Gain 12 dBm Typical P1dB 25 dBm Typical IP 3 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

GPD-201

Abstract: GPD-405 GPD-403 GPD-402 GPD-120 GPD-401 GPD-404 GPD-202 GPD-321 GPD-331
Contextual Info: electronics marketing 800.332.8638 Avnet Microwave Technical Solutions IF/RF Low Cost Cascadable Modules Selection Guide GPD Series GPM Series Features Description Case Types • Small Size The GPD and GPM amplifiers, available in TO-12 4-pin and TO-39 (3-pin) packages, are

DRR1-38XX

Contextual Info: Digital Radio Receiver Down Converter Modules for 37 to 40 GHz Technical Data DRR1-38XX Features Description • Low Noise PHEMT MMIC Front End Amplifier This digital radio receiver module provides the RF receive and down conversion function for 38 GHz digital radios.

Contextual Info: /pfj=> r MPT LNA2 LOW NOISE AMPLIFIER r 1800 to 2000 MHz Low Noise High Dynamic Range Amplifier For PCS Applications Features • • F u n ctio n a l Block Diagram 1.2 dB typical noise figure 31 dB typical gain 38 dBm typical third order intercept point 15 dB typical input and output return

100th tube

Abstract: P17W Scans-001724 M8078 Scans-0017249
Contextual Info: lOOTH e i t e l - Mc C SAN u l l o u g h BRUNO, , HIGH-M U TRIODE • i nc M ODULATOR CALIFORNIA O SCILLA TO R AMPLIFIER The Eim ac I0 0 T H îs a Hîgh-mu pow er trio d e having a maximum p late dissipation rating of 100 w atts, and is intend ed fo r use as an am p lifier, oscillator, or m odulator. It can be used a t its maximum

shm capacitor

Abstract: SHM CERAMIC CAPACITOR
Contextual Info: □ M SH M -12 n Ultra-Fast, 12-Bit Linear Monolithic Sample-Hold Amplifier IN N O V A TIO N a n d EX CELLEN C E FEATURES • Fast acquisition time: 10ns to ±0.1% 15ns to ±0.024% 20ns to ±0.012% • ±0.006% Nonlinearity • 65^Vrms output noise • 120MHz small signal bandwidth

MSH8

Contextual Info: S E D A T E M SH-840 L Quad, Simultaneous Sample-Hold with Multiplexer IN N O V A T IO N a n d E X C E L L E N C E FEATURES • 4 Simultaneous sample-hold amplifiers • Internal 4-channel multiplexer • 775ns acquisition time 10V step to ±0.01% including multiplexer

MP4T6365

Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable

HP-8573C

Abstract: v142 HP6038 HP-6038 IVA-14 IVA-14208 IVA-14208-STR IVA-14208-TR1 IVA-14228 IVA-14228-STR
Contextual Info: Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features Description • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth; 3.4 Gbits/s Data Rates • High Gain: 24 dB Typical • Wide Gain Control Range:

Scans-0017254

Abstract: general electric
Contextual Info: ELKCTROXn • » PRODUCT INFORMATION Page 1 10LZ8 IN ACTION Triode-Pentode TUBES The 10LZ8 is a miniature triode-pentode containing a high-mu triode and a sharpcutoff pentode. The pentode is intended for use as a video amplifier and the triode for general-purpose use.