15 1E41 Search Results

1E62H

Abstract: 1E4F 8XC196CB AN87C196CB 1E54H 1E7d 82527 as87c196cb board ccb2 nt 87C196CB
Contextual Info: 87C196CB Supplement to 8XC196NT User’s Manual CB_title.fm5 Page 1 Tuesday, September 15, 1998 9:54 AM 87C196CB Supplement to 8XC196NT User’s Manual September 1998 Order Number: 272787-002 CB_legal.fm5 Page 1 Tuesday, September 15, 1998 9:39 AM Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

49f040

Abstract: 6H9709 6h1026 6e9620 7G1040-1 atmel AT49F040 6H9652 8P0211C-1
Contextual Info: Page 1 of 11 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-49F040 FLASH MEMORY RELIABILITY DATA - 150°C OPERATING LIFE TEST - 125°C OPERATING LIFE TEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC) - 15 PSIG PRESSURE POT - 85°C/85% RELATIVE HUMIDITY OPERATING LIFE TEST

Ry110

Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Contextual Info: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #

Contextual Info: Data Sheet March 2002 TMXF28155 Supermapper 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3, DS2, T1/E1/J1, and DS0/ E0/J0 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

comcode 105 736 490

Abstract: SDH 209 GR-253-CORE JT-G704 JT-G706 TMXF28155 TR-62411 80212 502 2032b Ic 741 as I to v converter
Contextual Info: Preliminary Data Sheet December 2001 TMXF28155 Supermapper 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3/E3, DS2, T1/E1/J1, and DS0/E0/J0 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

stm cl-30

Abstract: THSC2 LT 7659 psb 500-1.0 highway speed checker data sheet transistor 9012 SDH 209 ses 554 transistor fcs 9012 70010 FB
Contextual Info: Data Sheet March 2002 TMXF28155 Supermapper 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3, DS2, T1/E1/J1, and DS0/ E0/J0 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

8030D

Abstract: 5001c ic pin details M13RF LC1 D18 E23378 0x2000D 747 ic XC1so 816f capacitor 1e81
Contextual Info: Preliminary Data Sheet December 2001 TMXF28155 Supermapper 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3/E3, DS2, T1/E1/J1, and DS0/E0/J0 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

LT 7659

Abstract: w20338 comcode 105 736 490 JT-G706 TMXF28155 TR-62411 GR-253-CORE JT-G704 1 into 12 demultiplexer circuit diagram 80212 502
Contextual Info: Data Sheet June 2002 TMXF28155 Supermapper 155/51 Mbits/s SONET/SDH x28/x21 DS1/E1 1 Features • ■ Versatile IC supports 155/51 Mbits/s SONET/SDH interface solutions for T3, DS2, T1/E1/J1, and DS0/ E0/J0 applications. Implementation supports both linear 1 + 1, unprotected and ring (UPSR) network topologies.

008 cow 734

Abstract: RDN240 WB4500 HT-SX gigabit ethernet over sdh 24B02 B3293 rxtcb 4 OIF-SFI401 3018* intel
Contextual Info: Intel WB4500 SDH/SONET STM-16/STS-48 Channelized Data Framer Datasheet Order Number: 274010-002 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS

1221h

Abstract: diode K1V 452 1488h AG18 1AB3 K1V 40 N PM5315 SPECTRA-2488 PMC 1601 001B PM5315
Contextual Info: PMC-Sierra, Inc. PRELIMINARY PM5315 SPECTRA-2488 DATASHEET PMC-1990821 ISSUE 3 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 2488 MBIT/S PM5315 SPECTRA-2488 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 2488 MBIT/S DATASHEET PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 2: FEBRUARY 2001

c151c

Abstract: bge25-800.21
Contextual Info: 1 1 11 2345567895 1 ABCD1E92C1FA12BD19FBBD1491B1 1 114D2D9F1CDBB21 119894D1FB2D1 DE51 F33B831 1 1 51 1 1 51 561 1 !"1  5165'&5$ 1 3*9 +,-.99 +,/71

diode K1V 452

Abstract: 09CCH 09E0H 09A1H 0943H 09C8 0951H 05C1H 1488h K1V 40 N
Contextual Info: SPECTRA-2488 Telecom Standard Product Data Sheet Released PM5315 SPECTRA-2488 SONET/SDH PAYLOAD EXTRACTOR/ALIGNER FOR 2488 MBIT/S Data Sheet Proprietary and Confidential Released Issue 4: November, 2001 Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use

SLC NAND endurance 100k years

Abstract: 802AH
Contextual Info: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)

tsop1748

Abstract: onenand block map onenand Flash Memory SAMSUNG OneNAND
Contextual Info: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)

Contextual Info: OneNAND512Mb KFG1216Q2B-xEBx FLASH MEMORY KFG1216Q2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

63FBGA

Abstract: KFG5616D1M-DEB KFG5616Q1M KFG5616Q1M-DEB KFG5616U1M-DIB 8017h
Contextual Info: OneNAND256 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND256 Part No. VCC core & IO Temperature PKG KFG5616Q1M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/48TSOP1 KFG5616D1M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/48TSOP1 KFG5616U1M-DIB 3.3V(2.7V~3.6V)

KFG1216Q2B

Abstract: 63FBGA TBA 2800 onenand
Contextual Info: OneNAND512Mb KFG1216Q2B-xEBx FLASH MEMORY KFG1216Q2B 512Mb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

012F

Abstract: reset nand flash 804aH
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.0 Date: August 4th, 2004 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY Document Title MuxOneNAND

KFG1G16Q2B

Abstract: oneNand OneNand DRAM 63FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

aff11

Contextual Info: 1 1234567895ABC5DEF55 5 55 5 1 1 225245 5 8585 12345625 A 5 2234563781 9A6B17B21 CDB271 EF19AAA1 233271 9A6B17BD1 CDB271 FA151CDB71 723A3221 9A612B71 CDB21 4A1 !A1 1 2!C23456728

8044H

Contextual Info: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. VCC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial

RCD 1230 SAMSUNG

Abstract: ST OneNAND samsung confidential samsung nor flash Flash Memory SAMSUNG OneNAND SAMSUNG NAND Qualification BLOCK37
Contextual Info: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. V CC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~ 2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial