001B Search Results

DG308

Contextual Info: SILICONIX INC 33E > • «554735 001b13a DG308A/309 Quad Monolithic SPST CMOS Analog Switches b « S IX £FES5Sk -f.-si -u FEATURES BENEFITS APPLICATIONS • ± 1 5 V Input Range • Low ON-Reslstance < 6 o m y p . • Fast Switching (< 1 3 0 ns) • Low Power Dissipation

CMJ-B

Abstract: DG-181AA JAN-38510 DG181AA CMJB DG181AR DG180AP DG181AP dg181bp
Contextual Info: SILICONIX INC 33E I • fl25M73S 001b355 B » S I X DG180/181/182 High-Speed Drivers with Dual SPST JFET Switches T-st-M fnrSiliccanix in c a rp d ra te d JmW FEATURES BENEFITS APPLICATIONS • Constant ON-Reslstance Over Entire Analog Range • Low Leakage

ic 301

Abstract: 2SD1535
Contextual Info: Power Transistors 2SD1535 b132fl52 001b7Sa MbO 2S D 1535 Package D im ensions Unit ; mm Silicon NPN Triple Diffused Planar Darlington Type High Power A m plifier • Features • • • • Very good linearity o f DC current gain Iiff High collector-base voltage (VCbo)

Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~TD 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR TECHNICAL DATA D Ê J 70772SO 001bS7M H 90D 16274 H G 1 5 0 H 1 Ï LI MG15 0H2CL1 M G 1 5 0 H 2 D L 1 hJ Eu H ffi o m h o £ O TOSHIBA CORPORATION G T I A2A DTr-33-‘35 TOSHIBA _

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } TT DE § TDT75SD 001b7SÜ TOS H I B A FIELD E FFECT TRANSISTOR TOSHIBA TO SHIBA 2 S K 7 8 9 SILICON N C H A N N E L MOS TYPE , TT - M ° s H TECHNICAL DATA D I S C R E T E / O P T O ) 99D 16750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

6CL6A

Abstract: TBA+150A
Contextual Info: 37bôSSS 001B5QS 3b0 «PI-SB Si G E C P L E S S E Y S E M I C O N D U C T O R S DC1840 Series PLANAR DOPED BARRIER MICROSTRIP LID/MICROLID MIXER DIODES Planar doped barrier PDB LID/MICROLID mixer diodes represent a major advancement in mixer/detector technology.

mg15n2

Contextual Info: TO TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E | TDTTESO 001bDS4 1 DT"33-3 5 90D 16054 SEMICONDUCTOR TOSHIBA GTR MODULE M G 1 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

8051

Abstract: 80c51 user guide 80c31 opcode 1000H 80C31 80C51 ADDRESSING MODES OF 8051 A2EH 80C51 family architecture
Contextual Info: Philips Semiconductors 80C51 Family 80C51 family architecture The interrupt service locations are spaced at 8-byte intervals: 0003H for External Interrupt 0, 000BH for Timer 0, 0013H for External Interrupt 1, 001BH for Timer 1, etc. If an interrupt service routine is

KK494

Abstract: KK494A
Contextual Info: TECHNICAL DATA KK494A KK494 KK494AN KK494AD 1 KK494A 2 KK494A 3 KK494A 4 KK494A N SUFFIX PLASTIC DIP MS - 001BB A Dimension, mm 9 16 Symbol MIN MAX A 18.67 19.69 B 6.1 7.11 B 1 8 5.33 C F L C D 0.36 0.56 F 1.14 1.78 G 2.54 H 7.62 -T- SEATING PLANE N G K

IR E78996

Abstract: 6J450 T45 diode 6H450 E78996 rectifier module E78996 diode FK 330
Contextual Info: INTERNATIONAL RECTIFIER bSE J> Wt 4ÛSS452 001b3E3 750 • INR Bulletin E27113 International IxqrIRectifier IRFK6H450,IRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.

Contextual Info: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

LB-603 FP

Contextual Info: 7fl2flcH ci 001b43fl 324 Light Emitting Diodes High efficiency, three-digit numeric displays LB-603 FP Series •External dimensions Unit: mm iolf •Features 1) Height of character: 14.3 mm. 2) The package surface is coated black and the segments are col­

Contextual Info: S A MS UN G E L E C T R O N I C S INC b?E ]> Bi 7 c3 b m M 5 KM44C4102 001b2tia Tb2 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its

Contextual Info: Silicon Switching Diode 35E D • ^ BAL 74 aS3b3B0 001b4?2 T « S I P SIEMENS/ SPCLi SEMICONDS • For high-speed switching C Type S BAL 74 Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package JC Q62702-A614 Q62702-A718

437HEX

Abstract: 11154
Contextual Info: ED DASH CDNNECTDR ND TYPE MATERIAL -1 -2 -3 -4 -5 -6 -7 -B -9 -10 -11 -12 -13 -14 -15 -16 -17 310-0002-24 3-0043-24 3-001B-24 3-0055-24 315-0011-24 3-0066-24 3-0074-24 3-0073-24 310-0025-24 3-0217-24 3-0112-24 3-0105-24 310-0006-24 3-0101-24 3-0052-24 3-0099-24

OPA104CM

Abstract: opa104 OPA104AM A104
Contextual Info: BURR-BROW N CORP S2E D • 17313bS 001b3T3 3 ■ T-THS BU R R -B R O W N 0 P A 1Q4 c Ultra-Low Bias Current Low Drift FET Input OPERATIONAL AMPLIFIER c FEATURES APPLICATIONS • SPECIFICATIONS GUARANTEED OVER TEM PERATURE • CURRENT TO VOLTAGE CONVERSION

KM93C06

Abstract: sansung KM93C06I samsung tv
Contextual Info: SAHSUNG ELECTRONICS INC b7E » • 7 1 b m 4 E 001bê02 ibi KM93C06 CMOS EEPROM 256-Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating temperature range — KM93C06: Commercial — KM93C06I: Industrial The KM93C06 is a CMOS 5V Only 256 bit non-volatile,

Contextual Info: XCL208/XCL209 シリーズ JTR28003-001b 400mA コイル一体型降圧 DC/DC コンバータ（micro DC/DC） ☆GreenOperation 対応 •概要 XCL208/XCL209 シリーズはコイルと制御 IC を一体化した超小型 2.5mmx2.15mm, h=1.05mm の降圧 DC/DC コンバータです。外

XC9136E50CDR-G

Abstract: XC9136N 4606 IC circuit diagram JMK212ABJ106KG marking CDF 2065V XC9135M JMK212ABJ106 XC9136E
Contextual Info: XC9135/XC9136 Series ETR0416-001b 1A Driver Transistor Built-In, Multi Functional Step-Up DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION XC9135/XC9136 series are synchronous step-up DC/DC converters with a 0.2Ω TYP. N-channel driver transistor and a 0.2

metal detector schematic

Abstract: SD5604
Contextual Info: b?E V m H551Ô30 001b7Sfi EOI «H O N 1 SD5604/5614 HONEYlilELL IN C / MICRO Optoschmitt Detector 10 kQ Pull-Up Output FEATURES • TO-18 metal can package • 12° nominal acceptance angle . TTL/LSTTL/CMOS compatible • 10 k£i pull-up output • Buffer (SD5604) or inverting (SD5614) logic

CH 9d b 14 a

Abstract: A 03e 000D 001B 3BBD
Contextual Info: COP8C 0005 0007 0009 000B 000D 000E 000F 30 98 30 DF 57 A6 9D 69 09 8B 00 JSR LD JSR LD LD X LD 00069 A,#009 0008B S,#000 B,#08 A,[B] A,011 uart_init ; result=strlen(buffer2); 0011 9C 15 0013 BC 14 00 X LD A,015 014,#00 q = 0; 0016 0018 001B 001B 001D 001F

TR6143

Abstract: advantest TR6143 opnext laser diode HP6655A apc driver for laser diode DESIGN AC VOLTMETER USING TWO DIODE Tektronix TDS 460A manual LDC-3722B infrared laser diode AM503
Contextual Info: ODE-608-001B Z Opnext Laser Diodes Surge Damage Prevention Manual Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility

jedec MS-001-AC

Abstract: MS-001-AF MS-001 MS-011 MS-011 Plastic DIP .600" Row Spacing
Contextual Info: PACKAGE OUTLINES Dual In Line Plastic DIP 0.300 in. row spacing, 8 pins Package Designator M (Reference MS-001BA) .400 10.96 .355 9.02 A B .014 0.36 .008 0.20 8 Preliminary dimensions, for reference only A Dimensions in inches Metric dimensions (mm) in brackets, for reference only

SK 863

Abstract: ff-009-p4x8b
Contextual Info: FIGURE 1 .34 8.6 REF. "B” PANEL -* THICKNESS ». H A REF. FF-001B .79 (20) RM S-76 FF-004B .71 (18) FF-003-P3x5.5B RM S-42 .53 (13.5) FF-005-P4x5B FF-005-P4x6B .79 FF-005-P4x7B (20) FF-005-P4x8B FF-006-P4x6B FF-006-P4x7B .55 FF-006-P4x8B (14) FF-006-P5x6.5B