11154 Search Results

c2324

Abstract: J0123
Contextual Info: MICRON TECHNOLOGV INC 1=11154"] 0001500 5 • ADVANCE 14E D r ffirr nk\ i T-*/é-Z3-31 2K x 16 FIFO FIFO VARIABLE FLAGS/MAILBOX REGISTER FEATURES • • • • • • • • • • • • PIN ASSIGNMENT Top View Very high speed: 25,30, and 35ns access

MB8516SR72CA

Abstract: mb8516 JEP-108E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S05- 11154- 1E MEMORY Registered 16 M x 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8516S R72CA-102/-103/-102L/-103L 168-pin, 4 Clock, 1-bank, based on 16 M x 4 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8516SR72CA is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

13540

Abstract: MB8516SR72CA
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11154-1E MEMORY Registered 16 M x 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8516SR72CA-102/-103/-102L/-103L 168-pin, 4 Clock, 1-bank, based on 16 M × 4 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8516SR72CA is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

MT4C1024

Contextual Info: MICRO N T E C H N O L O G Y INC SSE D • 1=11154^ G D D 4 1 7 4 17T « M R N MT4C1024 L 1 MEG X 1 DRAM |VtlC=RON DRAM 1 MEG X 1 DRAM FEATURES PIN ASSIGNMENT Top View • Industry standard x l pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process

MO-151

Abstract: SLB-26
Contextual Info: R E V LTR 1 S 1 O N S DESCRIPTION A R ELEA SE B 2 6 X 2 6 M A T R IX WAS 2 5 X 2 5 M A T R IX ; U PD ATE DATUMS P E R NEW ASME S T D . TO DOCUMENT C O N T R O L. E .C .N . DATE 11154 0 9 /1 3 /9 5 D E G /SL BY/APR'D 11533 0 8 /0 7 /9 6 MS/ ŒH EH — 0.2 l//|0-25|N

a6t transistor

Abstract: transistor A6t 15 ed 49
Contextual Info: MICRON T ECH NOLOGY INC 17E D • ^11154=1 OOOlñOk 7 ■ MT5C1608 883C MILITARY SRAM 2K X 8 SRAM T - 4 t - 2 3 * l2 . AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-84036,-89690 • JA N M385I0/291 • RAD-tolerant (consult factory)

TC5116400

Abstract: tc5116400csj 300D1 toshiba RAS-25
Contextual Info: INTEGRATED TOSHIBA TO SH IBA M O S DIGITAL NTEGRATED CIRCUIT CIRCUIT TECHNICAL T C 5 1 16 4 0 0 C S J / C S T - 4 0 T C 5 1 1 6 4 0 0 C S J / C S T - 50 T C 5 1 1 6 4 0 0 CSJ / C S T * 60 DATA SILICON GATE C M O S TENTATIVE D ATA 4,194,304 W O R D x 4 BIT D Y N A M IC R A M

cqc0300

Abstract: BFC2 435 mkp339
Contextual Info: MKP339 X2 www.vishay.com Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type FEATURES • AEC-Q200 qualified • 7.5 mm to 27.5 mm lead pitch. Supplied loose in box, taped on ammopack or reel • Material categorization: For definitions of compliance please see

Contextual Info: HV83 Super te x inc. HV84 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device Recommended Operating VPP max 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier Dice in waffle pack

L9490

Contextual Info: H V500 P re lim in a ry 32-Channel AC Plasma Display Driver Ordering Package Options Device H V500 40-Pin Ceramic DIP 44-Pin J-Lead Ceramic Chip Carrier 40-Pin Plastic DIP H V 50 0 D H V 50 0 P H V 500D J

LC1 D33

Contextual Info: a Prelim inary Advanced Micro Devices A m 2110 ISDN Terminal Adapter Circuit ITAC DISTINCTIVE CHARACTERISTICS • Universal adapter for ISDN R reference point ■ ■ Support of async and sync Interfaces: X.21, X.21 bis, V.24, RS232C Automatic calling/answering with on-chip

Contextual Info: Philips Components Product specification Aluminium electrolytic capacitors Power Standard Screw Terminals 086/087 PS-ST FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Large types, minimized dimensions, cylindrical aluminium case, insulated with a blue sleeve

MKT334

Contextual Info: MKT334 Vishay BCcomponents Series Impedance Film Capacitors Radial Potted Type FEATURES w l • 10 mm to 27.5 mm lead pitch 2 • Supplied loose in box, taped on ammopack or reel • Compliant to RoHS Directive 2002/95/EC h ENCAPSULATION Plastic case, epoxy resin sealed, flame retardant

MAR 948 transistor

Abstract: transistor MAR 826 SMD TRANSISTOR MARKING 99r S949T S949TR
Contextual Info: S949T/S949TR MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage MOSMIC – MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications RFC C block Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.

en132400

Abstract: vishay 2222 339 24105
Contextual Info: MKP 339 X2 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type FEATURES l 168x12 halfpage l w h 7.5 to 27.5 mm lead pitch. Supplied loose in box, taped on ammopack or reel w h h' F' lt P Ødt e3 Lead (Pb)-free product (1) F

Contextual Info: PRELIMINARY FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40°C to +85°C for Vcc = 3V to 3.6V -25°C to +85°C for Vcc = 2.7V to 3.6V

Contextual Info: ADVANCE MICRON MT4LC16257 S I 2256KX 5 6 K X 16 DRAM DRAM 256K x 16 DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process

Contextual Info: PRELIMINARY MT58LC32K32/36C5 32K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY. MC. SYNCHRONOUS SRAM 32Kx 32/36 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES Fast access times: 4.5, 5 , 6 , 7 , 8 and 9ns Fast OE# access times: 4.5, 5 and 6ns

Contextual Info: PRELIMINARY M I I^ S Q N 32K 32K x 32 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER NEW SYNCHRONOUS SRAM MT58LC32K32B2 32 SYNCBURST SRAM X FEATURES • • • • • • • • Fast access times: 9,10,11,12 and 14ns Fast OE: 5 and 6ns

Contextual Info: niCRON SEM IC ONDUCTOR INC b?E D • b i l l i g OGCHblS 7T2 « H R N ADVANCE I^ IIC R O N 32K X MT58LC32K36M1 36 SYNCHRONOUS SRAM 32K x 36 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND LINEAR BURST COUNTER FEATURES • • • • • • • •

C1994

Contextual Info: ADVANCE M IC R O N I MT20D840 8 MEG X 40 DRAM MODULE 8 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-perform ance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins are TTL-compatible

Contextual Info: MICRON TECHNOLOGY INC 14E D • b l l l 5 4 cl 0001404 0 ■ ADVANCE r -y g -z i-J 7 2K x 9 FIFO FIFO FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Very high speed: 25,30, and 35ns access H igh performance, low power CM O S process

Contextual Info: MICRON SEMICONDUCTOR INC b3E D blllSM'i ODD7bflS 522 • MRN PRELIMINARY MT4C4M4A1/B1 4 MEG X 4 DRAM I^ IC R O N DRAM 4 MEG X 4 DRAM FEATURES • Industry-standard x4 pinout, tim ing, functions and packages • High-performance CM OS silicon-gate process • Single power supply : +5V ±10%

Contextual Info: niCRON SEMICONDU CTOR INC b'iE D • hlllSMT □ □ G tìtì3tì 'iflT ■ URN M IC R O N I MT4C16260 256K X 16 DRAM SIM,CONDUCTOR ISC. DRAM 256K X 16 DRAM ASYMMETRICAL, FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages