14MAR05 Search Results

MAR 732

Abstract: Si4900DY S-50392
Contextual Info: SPICE Device Model Si4900DY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

6068C

Abstract: PQFP208 AT75C AT75C221 PA20 PA21 PA25 PA26 16 MHZ crystal oscillator
Contextual Info: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 40 MHz operation • 16-bit Fixed-point OakDSPCore® • • • • • • • • • • • – Up to 60 MHz operations – 104K bytes of Integrated Fast RAM, Codec Interface

Contextual Info: SPICE Device Model SUU50N06-07L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1419DH

Abstract: 73330
Contextual Info: SPICE Device Model Si1419DH Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

7332

Abstract: Si7148DP
Contextual Info: SPICE Device Model Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: KBP005G THRU KBP10G SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A FEATURE KBP Ideal for printed circuit board Surge overload rating:60 A peak High case dielectric strength MECHANICAL DATA Terminal: Plated leads solderable per

i20Z

Abstract: d1510
Contextual Info: CATALOG # 1C 1 1 SAFETY ORGANIZATIONS RELIABILITY SPECIFICATIDNS: — m — I APPCun STIRAffi TEM3ERATLRE; -40°C TD *85*C D63I-0174-Q5I KAW THIS FILTER HAS BEEN FEKMAllY RECOGNIZED. CERTIFIED IF APPROVED BY TIE LISTED AffiNCY. ThEREFtKE. ALL TEST/REIllIREteNTS SPECIFIED

SUD08P06-155L

Contextual Info: SPICE Device Model SUD08P06-155L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si1499dh

Contextual Info: Si1499DH New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID rDS(on) (W) (A)c 0.078 @ VGS = −4.5 V −1.6 0.095 @ VGS = −2.5 V −1.6 0.115 @ VGS = −1.8 V −1.6 0.153 @ VGS = −1.5 V −1.6 D TrenchFETr Power MOSFET: 1.5-V Rated

Contextual Info: Si21102 Vishay Siliconix New Product 150-mA Ultra Low-Noise LDO Regulator With Error Flag and Discharge FEATURES D Output, Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options

mv silicon mp3 player

Contextual Info: SiP21101 Vishay Siliconix New Product 150-mA Ultra Low-Noise LDO Regulator With Discharge FEATURES D Output, Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.0, 2.2, 2.5, 2.6, 2.7, 2.8, 2.85, 2.9, 3.0, 3.3, 3.5, 3.6, 5.0-V Output Voltage Options D SC70-5 Package

Si2306BDS

Abstract: 50395 SI2306 Si2306DS 73318
Contextual Info: SPICE Device Model Si2306BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

p-channel 2.5v g-s mosfet

Abstract: S50411
Contextual Info: SPICE Device Model Si1403BDL Vishay Siliconix P-Channel 2.5V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1411DH

Abstract: RthJA
Contextual Info: Si1411DH New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 rDS(on) (W) ID (A) 2.6 @ VGS = −10 V −0.52 2.7 @ VGS = −6 V −0.51 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

Diode marking MF

Contextual Info: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.625 @ VIN = 4.5 V "0.43 0.890 @ VIN = 2.5 V "0.36 1.25 @ VIN = 1.8 V "0.3 D D D D D D TrenchFETr Power MOSFET Pb-free 1.8 to 8-V Input Available

Contextual Info: SPICE Device Model Si1403BDL Vishay Siliconix P-Channel 2.5V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D 14 9 . 8 6 14 7 . 3 2 14 4 . 7 8 14 2 . 2 4 13 9 . 7 0 1 37.1 6 13 4 . 6 2 13 2 . 0 8 12 9 . 5 4 12 7 . 0 0 12 4 . 4 6 1 21 .92

SI2312BDS

Abstract: 50396
Contextual Info: SPICE Device Model Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1040X

Abstract: Si1040X-T1
Contextual Info: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.625 @ VIN = 4.5 V "0.43 0.890 @ VIN = 2.5 V "0.36 1.25 @ VIN = 1.8 V "0.3 D D D D D D TrenchFETr Power MOSFET Pb-free 1.8 to 8-V Input Available

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. 2 COPYRIGHT 19 RELEASED FOR PUBLICATION 6 5 ,19 BY AMP INCORPORATED. ALL RIGHTS RESERVED. D . 0 1 5 - [50 3 8 ] 61 941 s H fttj- ► .7185 [18.2501 .7185 [18.2501 R . 1 2 5 M I N[3 . 18] < [ ^ 1 . C) 0 0 [2 5 401 . 999

SUD08P06-155L

Contextual Info: SPICE Device Model SUD08P06-155L Vishay Siliconix P-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7148DP

Abstract: si7148 7332
Contextual Info: SPICE Device Model Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

7333-1

Abstract: 50413 Si5499DC 73331 A41219
Contextual Info: SPICE Device Model Si5499DC Vishay Siliconix P-Channel 8V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 40 MHz operation • 16-bit Fixed-point OakDSPCore® • • • • • • • • • • • • – Up to 60 MHz operations – 104K bytes of Integrated Fast RAM, Codec Interface