Si5499DC
Abstract: pf42-08
Contextual Info: New Product Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) • TrenchFET Power MOSFET: 1.5 V Rated
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Abstract: Si5499DC
Contextual Info: Si5499DC New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)e 0.036 @ VGS = −4.5 V −6 0.045 @ VGS = −2.5 V −6 0.056 @ VGS = −1.8 V −6 0.077 @ VGS = −1.5 V −6 VDS (V) −8 D TrenchFETr Power MOSFET: 1.5-V Rated
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7333-1
Abstract: 50413 Si5499DC 73331 A41219
Contextual Info: SPICE Device Model Si5499DC Vishay Siliconix P-Channel 8V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Contextual Info: Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21
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TB-17
Abstract: Si5499DC
Contextual Info: Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21
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A 2733
Abstract: 2231 3500 2231 AN609 Si5499DC 27273
Contextual Info: Si5499DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5499DC
Abstract: S8019
Contextual Info: New Product Si5499DC Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.036 at VGS = - 4.5 V -6 0.045 at VGS = - 2.5 V -6 0.056 at VGS = - 1.8 V -6 0.077 at VGS = - 1.5 V -6 VDS (V) -8 Qg (Typ.) • TrenchFET Power MOSFET: 1.5 V Rated
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Abstract: Si5499DC
Contextual Info: Si5499DC New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)e 0.036 @ VGS = −4.5 V −6 0.045 @ VGS = −2.5 V −6 0.056 @ VGS = −1.8 V −6 0.077 @ VGS = −1.5 V −6 VDS (V) −8 D TrenchFETr Power MOSFET: 1.5-V Rated
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SMD resistors 1806
Abstract: SMD zener diode 202 1N4148WS
Contextual Info: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5
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hpc0201ahpc0402ahpc0402b/chpc0603a+3smd resistors 1806smd zener diode 2021n4148ws
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BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8
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philips resistor
Abstract: mosfet 4800 sot26 sot363 transistor 4800 mosfet philips data pdta LMN200B01 Si3863DV si5499 EMF32 LMN200B02
Contextual Info: New Product Announcement May 16, 2006 Announcing “NEW” MOSFET + Transistor Complex Arrays in SOT-26 LMN200B01 / LMN400B01 and SOT 363 (LMN200B02 / LMN400E01) Packages A 6 B C 5 4 H 1 K M 2 3 J LMN200B01 / LMN400B01 D Min 0.35 1.5 2.7 ⎯ ⎯ 2.9 0.013
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BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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