140X130 Search Results

Contextual Info: Application Note from Europe for the World European PowerSemiconductor and Electronics Company Mounting of the IGBT-High-Power-Modules 140x130mm The contact surfaces of module and heatsink must be free from damage and contamination. A thin and uniform film of thermal compound should be applied to the contact area before mounting. A recommended method is applying the thermal compound with rollers or spatulas to the surface of the module or the heatsink. The quantity of thermal compound is sufficient if a small rim can be observed around the mounted module.

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

IGD515EI

Abstract: IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3
Contextual Info: 1700V Trench IGBT Modules * R. Mallwitz, R. Tschirbs , M. Pfaffenlehner, A. Mauder (*) (*) (*) (*) , C. Schaeffer (*) eupec GmbH, Max-Planck Straße 5, D-59581 Warstein-Belecke Infineon Technologies AG, Balanstraße 73, D-81541 Munich Infineon Technologies AG, Siemensstraße 2, A-9500 Villach

H128M

Abstract: STC128M TO92S 128M4
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 128M 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C060AJ-02 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2

transistor 8550

Abstract: h8550 8550 pnp transistor S8550
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 8550 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A060AJ-00 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2

Tag 225-600

Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

kpb 307

Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

Eupec Power Semiconductors

Abstract: AN2002-07 module RBSOA
Contextual Info: APPLICATION NOTE Date: 02.12.13 Page 1 of 3 AN-Number: AN2002-13 replaces AN2002-07 Mounting instructions for IHM & IHV modules • handling IGBTs are electrostatic-sensitive devices. While handling the modules, gate and auxiliary emitter terminals must be short-circuited by a metal

1K2A1

Abstract: DFM600FXM18
Contextual Info: p o w e rlin e frd modules F a st R e co v e ry D io d e FRD M o d u le s Generic Part Number (for u s e with Current Rating M o d u le s) ig b t Voltage Grade V *RRM (V) (A) DFM300LXM18 DFM600LXM18 DFM600FXM18 DFM900FXM18 DFM1200FXM18 1800 1800 1800 1800

DIN 46200

Abstract: V61-14 D 3501 N 42 T d1dt NT398 GEZ DIODES v72-26-120m T2551N V72-26 T188F
Contextual Info: Clamping Force kN an d D is c D ia m e te r (m m ) Phase control thyristors Typ kN Rectifier diodes Phase control thyristors mm Typ kN mm Typ kN Fast rectifier diodes mm T 178 N T 201 N 2 ,5 -5 7 -1 2 41 58 T 2001 N 3 6 -5 2 120 D 428 N 3 ,2 -7 ,6 41 T 2006 N

igd-1-ep

Abstract: IGBT 1200V 1 GBT 400 A 1200V IHD 660
Contextual Info: IGBT Driver Boards IGBT Treiber control channels interface type V DC average/ peak v ISO V ]GM A size POUT W by for modules mounting mm*mm outline ±1,5 ±8 ±8 2*1 2*1 2*3 100*107 100*107 100*107 cable cable cable up to 1200V up to 1200V up to 1200V 1 1 1

mosfet base induction heat circuit

Abstract: mitsubishi electric igbt module mitsubishi induction traction motor IGBT module FZ IGBT parallel igbt for HIGH POWER induction heating Igbt base induction heat circuit ieee 1000 POWEREX igbtmod igbtmod mitsubishi
Contextual Info: The Latest Advances in Industrial IGBT Module Technology Eric R. Motto John F. Donlon Application Engineering Powerex Inc. Youngwood PA, USA Application Engineering Powerex Inc. Youngwood PA, USA Abstract— More than ten years have elapsed since IGBT modules

IGD-1-EP515

Abstract: IGD-1-DT515 IGD-1-DT2
Contextual Info: Click on outline no. IGBT Driver Boards V DC control type channels interface average/ peak V ISO I GM POUT size V A W mm*mm for modules outline ±1,5 ±8 ±8 2*1 2*1 2*3 100*107 100*107 100*107 cable cable cable up to 1200V up to 1200V up to 1200V 1 1 1 ±8

DCR2950W

Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half

h8550 transistor

Abstract: h8550 Transistor 25V 1.5A, 1W NPN S8550 s8550 npn transistor TO-92 S8550 S8550 transistor s8550
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON 对应国外型号 S8550 H8550 █ 芯片简介 TRANSISTOR █ 芯片图 芯片尺寸：4 英寸（100mm） 芯片代码：A063AJ-00-XXX 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm；E 极 140×130µm

IGBT2

Abstract: hitachi transistor igbt GTO 100A 500V MBN1200E33E DIODE m7 dic 200a 300v mosfet G747 YG6260 12v igbt igbt p11
Contextual Info: （資料番号；NO.IGBT-HI-00002 R2） 高耐圧 IGBT モジュール 取扱説明書 株式会社 日立製作所 電力システム社 電機システム事業部 ＜パワーデバイス本部・開発部＞ 2009.12 月発行 2009 年 HITACHI Ltd. － 重 要 な お 知 ら せ －

TRANSISTOR 8050

Abstract: H8050 S8050 hFE 8050 transistor NPN TO-92 Vebo6v
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 8050 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C060AJ-00 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2

100N

Abstract: 250N AN2004-05 NM1515
Contextual Info: Application Note Date: 19.01.2007 AN-Number: AN2004-05 replaces AN2002-13 Page 1 Mounting instructions for IHM and IHV modules Introduction This application note should give recommendations regarding the characteristics of different thermal pastes, how a paste could be applied and how modules have to be

M28S

Abstract: HM28S transistor m28s transistor NPN TO-92 Vebo6v
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR M28S 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C060AJ-01 芯片厚度：240±20µm 管芯尺寸：600x600µm 2 焊位尺寸：B 极 130×150µm 2；E 极 140×130µm 2

ZENERDIODEN

Abstract: AN2002-07
Contextual Info: APPLICATION NOTE Datum: 2002-06-10 Seite 1 von 2 AN-Nummer: AN2002-07 Montagehinweise für IHM & IHV Module Handhabung IGBTs sind elektrostatisch empfindliche Bauelemente. Während des Einbaus der Module sind Gate und Hilfsemitter durch eine leitende Verbindung kurzzuschließen, um eine Zerstörung durch statische

2SD106AI-17

Abstract: 2SD315AI 2SD106AI 2SD106A FZ1200R33KF1 1SD418 IGD-1-DT515 1SD418FI-FZ800R33KF2 FZ800R33KF2 igd 515
Contextual Info: Treiber für IGBT und Power Mosfet Drivers for IGBTs and Power Mosfets No. of Gate Channels Voltage Type IGBT max. VCE VISO Ipeak 2SD106AI 2 +/- 15 V 1200 V 2500 V 6A 2SD106AI-17 2 +/- 15 V 1700 V 4000 V 6A 6SD106EI 6 +/- 15 V 1200 V 2500 V 6A 6SD106EI-17

cm500ha-34a

Abstract: vmos CM100DY-34A CM400DY-34A series connection igbt cm200dy-34a IGBT cross CM100DU-34KA CM200DU-34KA CM300DY-34A
Contextual Info: NEW 1700V A-SERIES IGBT MODULES WITHS CSTBT AND IMPROVED FWDi By Nicholas Clark1, John Donlon1, Shinichi Iura2 1 Powerex Inc., Youngwood, PA, USA 2) Power Device Works, Mitsubishi Electric Corp., Fukuoka, Japan Abstract: This paper presents a new series of 1700V IGBT Insulated Gate Bipolar Transistor) modules using

108X62

Contextual Info: powerline igbt modules IG B T M o d u le s Generic Part Number Voltage Grade Current Rating Circuit Type VcES V 'c (A) @ T case CQ Max. Saturation Current Voltage VCE(SAT) Rating (Typical) «CM (A) (V) Total Switching Energy Isolation Voltage (mJ) v« (kV)