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Abracon Corporation AB-DRO-14.5GHZ DRO 14.5GHZ FREE RUNNING
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AB-DRO-14.5GHZ	Box			1	1 $729.16 10 $729.16 100 $729.16 1000 $729.16 10000 $729.16	Buy Now
Knowles Capacitors B144MB1S Signal Conditioning 14 - 15 GHz 0.4 x 0.200 x 0.098
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TTI	B144MB1S	Bulk			25	1 - 10 - 100 $90.99 1000 $90.99 10000 $90.99	Buy Now
Murata Manufacturing Co Ltd LQW15AN2N6B80D RF Inductors - SMD 2.6 NH 0.1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	LQW15AN2N6B80D	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now
Murata Manufacturing Co Ltd LQW15AN2N6B8ZD RF Inductors - SMD 2.6 NH +-.1NH
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TTI	LQW15AN2N6B8ZD	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now

14.5GHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids	OCR Scan	TIM1414-15-252 145mA 2-11C1B)	PDF
Contextual Info: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION	Original	TIM1314-9L 75GHz -25dBc 33dBm	PDF
Contextual Info: Advance Product Information March 14, 2003 Ku Band 2W Packaged Amplifier TGA8658-EPU-SG TGA8658-EPU-SD Key Features • • • • • • • • • Frequency Range: 13-17 GHz Optimized for VSAT band 13.75-14.5GHz 33 dB Nominal Gain Typical > 33.5 dBm Psat in VSAT band @ 7V	Original	TGA8658-EPU-SG TGA8658-EPU-SD TGA8658-EPU-SD	PDF
Contextual Info: RFMA1214-0.5W-Q7 12.5– 14.5GHz High Gain Surface-Mounted PA UPDATED: 04-24-2008 FEATURES • • • • • 12.5 – 14.5GHz Operating Frequency Range 26.5dBm Output Power @1dB Compression 29.0dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout 16.5dBm/tone	Original	RFMA1214-0 -41dBc	PDF
EIA1414-2P Abstract: EIB1414-2P Contextual Info: Excelics EIA/EIB1414-2P PRELIMINARY DATA SHEET 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)	Original	EIA/EIB1414-2P 46dBm EIA1414-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC EIA1414-2P EIB1414-2P	PDF
EIA1314-2P Abstract: EIB1314-2P Contextual Info: Excelics EIA/EIB1314-2P PRELIMINARY DATA SHEET 13.75-14.5GHz, 2W Internally Matched Power FET • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL EIB FEATURES HIGH IP3(46dBm TYPICAL)	Original	EIA/EIB1314-2P 46dBm EIA1314-2P 180mA 32dBm 175oC 150oC 45dBc 23dBm/Tone -65/150oC EIA1314-2P EIB1314-2P	PDF
Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed	Original	FLM1314-12F FLM1314-12F FCSI0500M200	PDF
Contextual Info: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION	Original	TIM1414-18L -25dBc 36dBm 25GHz	PDF
MGF7201A Contextual Info: ^MITSUBISHI ELECTRONIC DEVICE GROUP MGF7201A DESCRIPTION MGF7201A is a monolithic microwave integrated circuit for use in 14.0 ~ 14.5GHz band amplifiers. APPLICATIONS FEATURES • • High output power P1dB = 30mW TYP. • 14 GHz-band amplifiers QUALITY GRADE	OCR Scan	MGF7201A MGF7201A	PDF
MGFK33V4045 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 3 3 V 40 45 1 4 .0 — 14.5GHz BAND 2W INTERNALLY M ATCH ED GaAs F E T D E S C R IP T IO N The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 1 4 .0 ~ 14.5	OCR Scan	MGFK33V4045 MGFK33V4045 77add 700mA 700mA)	PDF
Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed	Original	FLM1314-6F FLM1314-6F -65hods	PDF
Contextual Info: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1414-8F -46dBc FLM1414-8F	PDF
Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1314-12F -45dBc FLM1314-12F 25hods	PDF
Contextual Info: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL O u tp u t Power at ldB Compression Point PlcLB Power Gain at ldB Compression Point G ldB D rain C urrent I ds i>dd Power Added Efficiency CONDITION f =13.75-14.5GHz 37.0	OCR Scan	TIM1414-7-252	PDF

Contextual Info: FLM1414-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 6.0dB (Typ.) • High PAE: r iadd = 26% (Typ.) • Low IM3 = -46dBc@Po = 26.5dBm (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM1414-6F -46dBc 25llowing FCSI0598M200	PDF
MGFK44A4045 Contextual Info: PRELIMINARY MITSUBISHI s e m ic o n d u c t o r <GaAs fet> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING T he M G F K 4 4 A 4 0 4 5 is an internally impedance matched G aAs power F E T especially Unit : millimeters	OCR Scan	MGFK44A4045 MGFK44A4045 gf-38 25ohm FK44A4045	PDF
Contextual Info: FMM5522GJ VSATMMIC FEATURES • • • • • • High Output Power: P-\|<jB = 35.0dBm Typ. High Gain: G-ih r = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION	OCR Scan	FMM5522GJ FMM5522GJ FCSI0599M200	PDF
FMM5048GJ Abstract: 28940 mmic case styles Contextual Info: FMM5048GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION	Original	FMM5048GJ FMM5048GJ FCSI0500M200 28940 mmic case styles	PDF
14.5ghz Abstract: FLM1414-3F Contextual Info: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM1414-3F 35dBm -46dBc FLM1414-3F 14.5ghz	PDF
FMM5522GJ Abstract: EUDYNA ku vsat amplifier 14.5ghz Eudyna Devices power amplifiers mmic case styles Contextual Info: FMM5522GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION	Original	FMM5522GJ FMM5522GJ VDD14888 EUDYNA ku vsat amplifier 14.5ghz Eudyna Devices power amplifiers mmic case styles	PDF
FLM1314-6F Abstract: tel 1145 319 Contextual Info: FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed	Original	FLM1314-6F FLM1314-6F Di4888 tel 1145 319	PDF
FLM1414-4C Contextual Info: p. FLM1414-4C Internally Matched Power GaAs FETs . J FEATURES • High Output Power: P-idg = 35.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 21% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed	OCR Scan	FLM1414-4C FLM1414-4C 1100mA	PDF
MGFK44A4045 Abstract: SCL4035 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK44A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFK44A4045 MGFK44A4045 00GHz 01GHz 20GHz14 21GHz SCL4035	PDF
S465A Abstract: FLM1314-18F ED-4701 Contextual Info: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION	Original	FLM1314-18F FLM1314-18F 25ong, S465A ED-4701	PDF

14.5GHZ Search Results

14.5GHZ Price and Stock

Abracon Corporation AB-DRO-14.5GHZ

Knowles Capacitors B144MB1S

Murata Manufacturing Co Ltd LQW15AN2N6B80D

Murata Manufacturing Co Ltd LQW15AN2N6B8ZD

14.5GHZ Datasheets Context Search

EIA1414-2P

EIA1314-2P

MGF7201A

MGFK33V4045

MGFK44A4045

FMM5048GJ

14.5ghz

FMM5522GJ

FLM1314-6F

FLM1414-4C

MGFK44A4045

S465A