1346 TRANSISTOR Search Results

Contextual Info: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

Semiconductor 1346 transistor

Contextual Info: ON Semiconductort MPSW92 One Watt High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −300 Vdc Collector −Base Voltage VCBO −300 Vdc Emitter −Base Voltage

FR180

Abstract: BFR180
Contextual Info: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

a06 amplifier

Abstract: a06 transistor a06 transistor 165 MPS-A05 MPS-A06
Contextual Info: r— i Silicon Transistors I I B I MPS-A05 MPS-A06 The MPS-A05 and MPS-A06 are silicon planar epitaxial passivated NPN tran­ sistors designed for general purpose audio amplifier applications. a b s o lu te m a x im u m r a t i n g s : TA = 25°c unless otherwise specified

CBC 184 transistor

Abstract: CBC 184 c transistor 2SA753 CBC 184 b transistor K 1357 t11g UPS 1353 10PS 2SA730 2SA731
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

1348 transistor

Abstract: 1346 transistor transistor 1346
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES PHN103 PINNING - SOT96-1 S08 • High-speed switching PIN SYMBOL • No secondary breakdown 1 n.c • Very low on-state resistance. 2 s source 3 s source APPLICATIONS

BU 103t transistor

Abstract: IC LM234 134H-6 diode cross reference 1N457 lm3341 lm 234 diode
Contextual Info: Semiconductor May 1998 LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description LM 234-3 and LM 134-6/LM 234-6 are specified as true te m ­ perature sensors with guaranteed initial accuracy of ±3°C and ±6°C , respectively. These devices are ideal in rem ote

cm 45-12

Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
Contextual Info: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l

Contextual Info: Product Bulletin OPI120TX/TXV September 1996 Hi-Rel Optically Coupled Isolator Types OPI120TX, OPI120TXV Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • High current transfer ratio • 15 kV electrical isolation • Base lead provided for conventional

OP235TX

Abstract: OP235TXV OP804TX OP804TXV OPI120TX OPI120TXV
Contextual Info: 0 . OPTEK Product Bulletin OPI120TX/TXV September 1996 Hi-Rel Optically Coupled Isolator Types OPI120TX, OPI120TXV Features Absolute Maximum Ratings T a = 2 5 ° C unless otherw ise noted • High current transfer ratio • 15 kV electrical isolation • Base lead provided for conventional

Contextual Info: 0 .O P IE K Product Bulletin OPI120TX/TXV September 1996 Hi-Rel Optically Coupled Isolator Types OPI120TX, OPI120TXV Features Absolute Maximum Ratings T a = 25° C unless otherwise noted • High current transfer ratio • 15 kV electrical isolation • Base lead provided for conventional

IC LM234

Abstract: ET227
Contextual Info: a t i o n a l S e m i c o n d u c t o r LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description LM 234-3 and LM 134-6/LM 234-6 are specified as true te m ­ perature sensors with guaranteed initial accuracy of ±3°C and ±6°C , respectively. These devices are ideal in rem ote

Contextual Info: 0 . OPTEK P roduct B ulletin OPI120TX/TXV Septem ber 1996 Hi-Rel Optically Coupled Isolator Types OPI120TX, OPM2QTXV Features A b so lu te M axim um R atings Ta = 25° C unless otherwise noted • High current transfer ratio • 15 kV electrical isolation

Contextual Info: AScn“ t'rg',Comp“” /UA78M15QB 3-Terminal Positive Voltage Regulator MIL-STD-883 July 1986— Rev 25 Aerospace and Defense Data Sheet Linear Products Connection Diagram 3-Lead TO-39 Can Top View Description The /jA 78M15QB 3-Terminal Medium Current Positive Volt­

eltec 406

Abstract: DETECTOR FLAME MOTION DETECTOR opamp "Pyroelectric Detector" eltec eltec 406 me eltec ELECTROLYTIC CAPACITOR JFET 104 flame detector J-FET TRANSISTOR
Contextual Info: Model 40612 Pyroelectric IR Detector with Internal JFET and Load/Feedback Resistor E L -T E C Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 40612 consists of a single

a78m15

Abstract: Sink11
Contextual Info: FAIRCHILD A S chlum berger Com pany /UA78M15QB 3-Terminal Positive Voltage Regulator MIL-STD-883 July 1986— Rev 2s A erospace and Defense Data Sheet Linear Products D escription C o nn ection Diagram 3 -L ead T O -39 Can T o p View The /¿A78M15QB 3-Terminal Medium Current Positive V olt­

2N6052

Contextual Info: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058

BUP 312

Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B

A571 TRANSISTOR

Abstract: BATTERY LEVEL INDICATOR CT918 transistor 1247 IC NE 555 UMA1018 UMA1000LT ic 1 ne 555 All Microphone SA612
Contextual Info: P hilips Sem iconductors Selection guide Alphanumerical index ALPHANUMERIC INDEX PAGE P 80C552/(P)83C552 single-chip 8-bit microcontroller 49 (P)80CL31/(P)80CL51 low-voltage single-chip 8-bit microcontroller 54 (P)80CL410/(P)83CL410 low-voltage/low-power single chip 8-bit microcontroller with l2C-bus

3-bit counter

Abstract: MAX3664 MAX3675 MAX3680 MAX3680EAI
Contextual Info: 19-1210; Rev 1; 11/00 KIT ATION EVALU E L B A AVAIL +3.3V, 622Mbps, SDH/SONET 1:8 Deserializer with TTL Outputs _Features ♦ Single +3.3V Supply ♦ 622Mbps Serial to 77Mbps Parallel Conversion ♦ 165mW Power ♦ Synchronization Input for Data Realignment and

cross PD6

Abstract: 3-bit counter 3 bit counter shift register ttl
Contextual Info: 19-1210; Rev 0; 3/97 KIT ATION EVALU LE B A IL A AV +3.3V, 622Mbps, SDH/SONET 1:8 Deserializer with TTL Outputs _Features The MAX3680 deserializer is ideal for converting 622Mbps serial data to 8-bit-wide, 77Mbps parallel data in ATM and SDH/SONET applications. Operating

CT914

Abstract: philips audio amplifier ic guide UMA1000LT P-Channel RF Amplifier Philips Semiconductors Selection Guide All Microphone CT918 "true Logarithmic Amplifier" TDA7050 bs107 transistor
Contextual Info: Philips Semiconductors Selection guide Functional index PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC TEA1060/1061 versatile telephone transmission circuits with dialler interface; 304 TEA1060: low-impedance input for dynamic and magnetic microphones;

3-bit counter

Abstract: MAX3664 MAX3675 MAX3680 MAX3680EAI
Contextual Info: 19-1210; Rev 2; 7/04 KIT ATION EVALU E L B A AVAIL +3.3V, 622Mbps, SDH/SONET 1:8 Deserializer with TTL Outputs _Features ♦ Single +3.3V Supply _Applications _Ordering Information ♦ 622Mbps Serial to 77Mbps Parallel Conversion

LM292

Contextual Info: LM392/LM2924 Low Power Operational Amplifier/Voltage Comparator General Description Features The LM392 series consists of 2 independent building block circuits. One is a high gain, internally frequency compensat­ ed operational amplifier, and the other is a precision voltage