13005 S Search Results

MJE13004

Abstract: 13005 transistor 13005 13005 TRANSISTOR MJE13005 transistor 13005 CIRCUIT 13005 A tr 13005 PC 13005 TRANSISTOR MJE130
Contextual Info: MJE13004/13005 MJE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor 13005

Abstract: npn silicon transistor 13005 application note 13005 ST-13005 A 13005 A 13005 TO-220 13005 2 ST-13005 BR 13005 13005 st
Contextual Info: ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400

Transistors 13005 D

Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use

transistor 13005

Abstract: KSE13005 D283AG-00 transistor E 13005
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13005 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D283AG-00 芯片厚度：240±20µm 管芯尺寸：2830x2830µm 2 焊位尺寸：B 极 1200×420µm 2，E 极 1140×540µm 2

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

13005 2 transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

transistor 13005

Abstract: 13005 transistor d 13005 13005 2 transistor CD13005 13005f 13005 applications CDA marking IC
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION

13005 2 transistor

Abstract: transistor sr 13005 transistor d 13005 13005 A transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION

D13005

Abstract: C13005 on 5262 e13005f 13005 ballast E13005 13005 st ballast with 13005 d13005e transistor E 13005
Contextual Info: ST13005 High voltage fast-switching NPN power transistor Datasheet − production data Features • Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting

transistor Electronic ballast 13005

Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
Contextual Info: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

Contextual Info: PhMKP., Rectangular, LVAC www.vishay.com Vishay ESTA LVAC Power Capacitors FEATURES • Self-healing technology • Over pressure tear-off fuse • Robust steel container • Massive connection studs APPLICATIONS • Areas with dust and moisture, which require a high degree

CI 13007

Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA

mje13005-1

Abstract: 13005 ballast 13007 transistor 13007 ic st24c02 13007 applications 13007 TRANSISTOR TS93C46 ballast with 13005 MJE-13007
Contextual Info: {ZT SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA

FORCE-90

Abstract: B545 C17200
Contextual Info: Series 800 Vertisockets Horizontal Mounting with Collet Contacts FEATURES: • Aries offers a full line of Vertisockets™ for DIP packaging of LEDs, incandescent lamps, DIP switches, test points, etc. The variations of mounting positions provide exceptional design

A614-Y

Abstract: D13005 1370E B857 d13005c A1012Y 1012Y A1012-Y A614Y 9015B
Contextual Info: RECTRON See Below for Part # SEMICONDUCTOR TECHNICAL SPECIFICATION TO-220 - Power Transistors and Darlingtons TO-220 4 1 2 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector 3 Dimensions in millimeters Electrical Characteristics Ta=25oC Part # 1 Polari ty VCBO

13005 mosfet

Abstract: BL8310
Contextual Info: 上 海 贝 岭 股 份 有 限 公 司 BL8310 电子镇流器专用驱动电路 邮 编 ： 200233 上海市宜山路 810 号 Tel: 86-021-64850700 Fax: 86-021-64854424 BL8310 电子镇流器专用驱动电路 BL8310 是电子镇流器专用控制芯片，作为 BL8305A 的升级产品，

Low Capacitance MOS FET 13005

Abstract: BF1205C
Contextual Info: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1

A84 marking code

Abstract: AXH marking AXH 2510
Contextual Info: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book LOW VOLTAGE POWER CAPACITORS ViShAy ESTA Notes: 1. To navigate: a Click on the Vishay logo in any document to go to the overview page. b) Click on the document name within the overview to go directly to the

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

MC34060AD

Abstract: MPS 0715 A114E A115 JESD22 JESD78 MC33060A MC34060A MR850
Contextual Info: MC34060A, MC33060A Fixed Frequency, PWM, Voltage Mode Single Ended Controllers The MC34060A is a low cost fixed frequency, pulse width modulation control circuit designed primarily for single−ended SWITCHMODEt power supply control. The MC34060A is specified over the commercial operating

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

DTS108

Abstract: 2n2585 DTS103 DTS106 BUY27
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

Omron TL-X proximity

Contextual Info: C500-IDS01-V1/IDS02 ID Sensor Revised May 1990 Written and Produced for OMRON by: Brent Winchester Koji Suzuta DATEC Inc.
 Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.