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    Transistors 13005 D

    Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
    Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use


    OCR Scan     		tati53o-220mje13004bs3131+10t-33-73transistors 13005 dtransistor mje 533113005 2 transistorhf 13005mje 5331transistor e 13005eb 13005e 13005 ld 13005 k PDF

    transistor Ip

    Abstract: BUK426-200A BUK426-200B
    Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE bbSBTBl D 0ÜSÜ5S0 5 B U K 426-200A B U K 426-200B PowerMOS transistor T -3 7 -il QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		buk426-200abuk426-200bbuk426-200a+2-200btransistor ip PDF

    Philips FA 145

    Abstract: BUK426-200A BUK426-200B
    Contextual Info: N AMER PHI LIPS/ DI SC RE TE 2SE D • bbSBTBl 0ÜSÜ5S0 5 ■ PowerMOS transistor BUK426-200A BUK426-200B T-37-1/ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


    OCR Scan     		t-37-1/buk426-200a-200b+4ot-199philips fa 145buk426-200abuk426-200b PDF