12V 10A SMPS Search Results

jrc 5532

Abstract: jrc 5534 as4558 audio amplifier 4558 12v electronic transformer RECTIFIER 5532 JRC 4558 JRC JRC4558 bridge rectifier 12V 1A jrc 4558
Contextual Info: NIEC’s SBD and FRED for Audio Nihon Inter Electronics Corporation NIEC is a major manufacturer of Schottky Barrier Diode (SBD) and Fast Recovery Epitaxial Diode (FRED). Thanks to low dissipation, fast switching, and low noise characteristics, these fast switching diodes are widely used in Switching Mode Power Supply (SMPS) all over the

ISL9H2060EG3

Abstract: LD26
Contextual Info: ISL9H2060EG3 Data Sheet January 2002 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and avalanche

Contextual Info: PD - 95355A IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRF MOSFET 10A P

Abstract: IRF P CHANNEL MOSFET 10A 100V IRF 10A IRF P CHANNEL MOSFET 100v MOSFET 150 N IRF power Diode 200V 10A 12v 10A regulator IRF AN1001 AN1001 EIA-541
Contextual Info: PD - 95355A IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: PD - 95355A IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

ISL9H2060EG3

Abstract: LD26 igbt 400V 20A
Contextual Info: ISL9H2060EG3 Data Sheet Title L9 060 3 bjec 0V, MPS LGC ries ann BT h tialle 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC) SMPS II IGBT combining the fast switching speed of the SMPS

Contextual Info: PD - 95355 IRFR15N20DPbF IRFU15N20DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

20n60a4d

Abstract: TA49372 20N60A4 HGTG*N60A4D TA49341 HGTG20N60A4D LD26 TA49339 HGTG
Contextual Info: HGTG20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

HGTG20N60A4D

Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

20N60A4D

Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247
Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

20N60A4D

Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49372 mosfet 20a 300v P channel 600v 20a IGBT LD26 TA49339
Contextual Info: HGTG20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

20n60a4d

Abstract: HGTG20N60A4D TA49372
Contextual Info: HGTG20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

20N60A4D

Abstract: 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D
Contextual Info: HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

Contextual Info: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRF MOSFET 100A 200v

Abstract: AN1001 IRFR120 IRFR15N20D IRFU120 IRFU15N20D U120
Contextual Info: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

EIA-541

Abstract: IRF7470 MS-012AA
Contextual Info: PD- 93913D IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

Contextual Info: PD- 95276 IRF7470PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

IRF7470PBF

Abstract: EIA-541 F7101 IRF7101
Contextual Info: PD- 95276 IRF7470PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification l Lead-Free VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

IRF7470

Contextual Info: PD- 93913C IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

Contextual Info: PD- 93913B IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

IRFB18N50KPBF

Abstract: diode 17a 400v
Contextual Info: SMPS MOSFET PD - 95472A IRFB18N50KPbF Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.26Ω 17A

APW7159A

Abstract: APW7159
Contextual Info: APW7159A Dual Channel Synchronous Buck PWM Controller for SMPS Features General Description • • The APW7159A is a dual channel voltage mode and syn- Single 12V Power Supply Required Excellent Output Voltage Regulation chronous PWM controller which drives dual N-channel

GP07N120

Abstract: SGP07N120 SGP07N120 equivalent PG-TO-220-3-1 ir igbt 1200V 10A
Contextual Info: SGP07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour

gb07n120

Abstract: PG-TO-263-3-2 SGB07N120 PG-TO263-3-2
Contextual Info: SGB07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour