12JUN07 Search Results

Contextual Info: 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 — ,— LOC ALL RIGHTS RESERVED. ES DIST R E V IS IO N S 00 p LTR A DESCRIPTION DATE RELEASE DWN 12JUN07 APVD RC EW D D 1. ONE CABLE ASSEMBLY PACKAGED IN A POLY BAG.

Contextual Info: 1 2 3 4 1.40±0.05 Ø 0.85±0.10 TYP. *Ø1.5±0.10 2.54 A±0.10 1.27±0.05 . 1.80 1.50 2.54 1.80 B±0.30 *Ø1.5±0.10 1.27±0.05 1.40±0.05 2.54±0.05 * 1 hole necessary to let IDC nose go through the hole PCB LAYOUT - COMPONENT VIEW 1.90 4.00 4.00 3.1 0.25

74319

Abstract: 0947 AN609 Si4908DY 72483
Contextual Info: Si4908DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

W 1.4852

Abstract: 9952 9962 mosfet AN609
Contextual Info: Si5441BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si5406DC

Abstract: AN609
Contextual Info: Si5406DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

49468

Abstract: AN609 Si5443DC
Contextual Info: Si5443DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si5433BDC
Contextual Info: Si5433BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

3452-2

Abstract: AN609 Si4914DY si4914
Contextual Info: Si4914DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

8843

Abstract: AN609 Si5402BDC
Contextual Info: Si5402BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: MBR30.CTPbF Series Vishay High Power Products Schottky Rectifier FEATURES • • • • Base common cathode 2 2 Common cathode Anode TO-220 1 • • • • Anode 3 150 °C TJ operation Center tap TO-220, D2PAK and TO-262 packages Low forward voltage drop

74613

Abstract: B1004-BD TS3332LD XB1004-BD 96330
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias

PS2231

Abstract: PS2136 ps223 phison
Contextual Info: 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel： 886-3-5833899 ext: 1001 or 1005 Fax： 886-3-5833666 Email：sales@phison.com Phison Electronics Corporation USB 2.0 Flash Controller Specification PS2231 Version 1.6

B1004-BD

Abstract: TS3332LD XB1004-BD
Contextual Info: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias

Contextual Info: MBR4045CTPbF Vishay High Power Products Schottky Rectifier, 40 A FEATURES • 150 °C TJ operation • Center tap TO-220, D2PAK and TO-262 Pb-free Available packages • Low forward voltage drop RoHS* COMPLIANT • High frequency operation • High purity, high temperature epoxy encapsulation for

MBR1545CT

Abstract: MBR1535
Contextual Info: MBR15.CTPbF Series Vishay High Power Products Schottky Rectifier FEATURES • • • • Base common cathode 2 2 Common cathode Anode TO-220 1 • • • • Anode 3 150 °C TJ operation Center tap TO-220 package Low forward voltage drop High purity, high temperature epoxy encapsulation for

Contextual Info: 24 23 22 21 20 19 17 IB 16 15 14 13 11 12 10 8 3L 7 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M MISSING SYMBOLS TOTAL NO OF INSPECTIONS REQUI RED

Contextual Info: 1 2 3 4 1.40±0.05 Ø 0.85±0.10 TYP. *Ø1.5±0.10 2.54 A±0.10 1.27±0.05 . 1.80 1.50 2.54 1.80 B±0.30 *Ø1.5±0.10 1.27±0.05 1.40±0.05 2.54±0.05 * 1 hole necessary to let IDC nose go through the hole PCB LAYOUT - COMPONENT VIEW 1.90 4.00 4.00 3.1 0.25

MTA-156

Contextual Info: 3 5 DRAWING IS UNPUBLISHED. 2 1 RELEASED FOR PUBLICATION 3 ELECTRONICS CORPORATION. REVISIO NS . RIGHTS RESERVED. CM 00 DESCRIPTION E C 0 -0 7 — 0 1 2 8 6 2 95.1 0 9 1 .1 3 87.1 7 8 3 .2 1 7 9 .2 5 7 5 .2 9 71 . 3 2 6 7 .3 6 6 3 .4 0 5 9 .4 4 5 5 .4 7 51 .51

MTA-156

Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . 0.48 + 0.08 AMP 1471-9 R EV 3 1 M A R 2 0 0 0 LOC D IS T LIVI 0 0 R E V IS IO N S

MTA-156

Contextual Info: REVISIONS D IS T D E S C R IP T IO N ' R ECO —0 7 —01 2 8 6 2 R 1 REVISED PER ECO- A D C CONNECTOR ASSEMBLY TAPE A +-00.38 .25 + .015 6.22 [.245] 9.02 [.355] ' 1.19 + 0.15 [.047 + .006] 8.26 [.325] 4.57 + 0.15 [. 180 + .006] 5 6 MATERIAL: C O N N E C T O R - NYLON U L 9 4 M - 2 W H ITE .

G.2 MARKING CODE

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 3 R E LE A S E D FO R P U B LIC A T IO N BY 1TCO ELEC TR O N IC S CO RPO RATIO N. - , - A L L R IG H T S R E S E R V E D . D F IG C 1 o o o o o o o o CONTENT ARRANGEMENT FIG 2 A AMP 1 4 7 1 - 9 REV 31M AR2000

MBR4045CT

Contextual Info: MBR4045CTPbF Vishay High Power Products Schottky Rectifier FEATURES • • • • Base common cathode 2 2 Common cathode Anode TO-220 1 • • Anode 3 • • 150 °C TJ operation Center tap TO-220, D2PAK and TO-262 packages Low forward voltage drop

9952

Abstract: 12460 AN609 Si5445BDC
Contextual Info: Si5445BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: STPS40L15CTPbF Vishay High Power Products Schottky Rectifier, 2 x 20 A FEATURES • • • • • • 125 °C TJ operation VR < 5 V Center tap module Pb-free Available Optimized for OR-ing applications Ultra low forward voltage drop RoHS* COMPLIANT