128K X 8 SRAM Search Results

Contextual Info: D P E 4 1 2 8 8 128K X 8 CMOS EEPROM MODULE DESCRIPTION: The DPE41288 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module organized 128K X 8. The DPE41288 is pin compatable with the JEDEC Standard for 128K X 8 SRAM Monolithic devices.

CY14B101P-SFXI

Contextual Info: CY14B101P 1 Mbit 128K x 8 Serial SPI nvSRAM with Real Time Clock 1 Mbit (128K x 8) Serial SPI nvSRAM with Real Time Clock Features • ■ 1 Mbit Nonvolatile SRAM ❐ Internally organized as 128K x 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

LP621024DM-70LLF

Abstract: LP621024DV-70LLF LP621024D-70LLF LP621024D-55LLF LP621024 LP621024DM70LLF LP621024D LP621024D-55LL LP621024D-70LL LP621024DM-55LL
Contextual Info: LP621024D Series 128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. 1.1 History Issue Date Remark Add Pb-Free package type August 19, 2004 Final August, 2004, Version 1.1 AMIC Technology, Corp. LP621024D Series 128K X 8 BIT CMOS SRAM

LP621024D-70LLTF

Abstract: LP621024D-55LLT LP621024D-70LLT LP621024DM-55LLT LP621024DM-T LP621024D-T
Contextual Info: LP621024D-T Series 128K X 8 BIT CMOS SRAM Document Title 128K X 8 BIT CMOS SRAM Revision History Rev. No. 1.1 History Issue Date Remark Add Pb-Free package type August 19, 2004 Final August, 2004, Version 1.1 AMIC Technology, Corp. LP621024D-T Series 128K X 8 BIT CMOS SRAM

Contextual Info: □PM DPE41288 Dense-Pac Microsystems. Inc. 128K X 8 CMOS EEPROM MODULE O DESCRIPTION: The DPE41288 is a high-performance Electrically Erasable and Programmable Read O nly Memory EEPROM module organized 128K X 8. The DPE41288 is pin compatable with the JEDEC Standard for 128K X 8 SRAM Monolithic devices.

DRAM 256 X 1, 18 PDIP

Abstract: 64K X 4 SRAM mmui
Contextual Info: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small

A81L801

Abstract: 69LD
Contextual Info: A81L801 Stacked Multi-chip Package MCP 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM Preliminary Document Title Stacked Multi-chip Package (MCP) 1M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM

Contextual Info: CY7C008/009 CY7C018/01964K/128K x 8/9 Dual-Port Static RAM CY7C008/009 CY7C018/019 64K/128K x 8/9 Dual-Port Static RAM Features • Automatic power-down • True Dual-Ported memory cells that allow simultaneous access of the same memory location • 128K x 8 organization CY7C009

Contextual Info: AK632128W/AK632128Z 128K x 32 SRAM MODULE ACCUTEK MICROCIRCUIT DESCRIPTION The Accutek AK632128 high density memory module is a static random access memory organized in 128K x 32 bit words. The assembly consists of four high speed 128K x 8 SRAMs in surface

32-PIN

Abstract: GVT73024UL8 GVT73024ULXX GVT73024ULXXB
Contextual Info: PRELIMINARY GALVANTECH, INC. ASYNCHRONOUS ULTRA LOW POWER FULL CMOS SRAM GVT73024UL8 ULTRA LOW POWER 128K X 8 SRAM 128K x 8 SRAM LOW POWER SUPPLY VOLTAGE LOW STANDBY CURRENT FEATURE GENERAL DESCRIPTION • • • The GVT73024UL8 is organized as a 131,072 x 8 SRAM

GVT72128A8

Abstract: GALVANTECH
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72128A8 REVOLUTIONARY PINOUT 128K X 8 128K x 8 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72128A8 is organized as a 131,072 x 8 SRAM

GALVANTECH

Abstract: GVT72128A8
Contextual Info: GALVANTECH, INC. GVT72128A8 REVOLUTIONARY PINOUT 128K X 8 ASYNCHRONOUS SRAM 128K x 8 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72128A8 is organized as a 131,072 x 8 SRAM

GVT73128A8

Contextual Info: GALVANTECH, INC. GVT73128A8 REVOLUTIONARY PINOUT 128K X 8 ASYNCHRONOUS SRAM 128K x 8 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT73128A8 is organized as a 131,072 x 8 SRAM

Contextual Info: ADVANCE M T5LC 128K 8D 4 128K X 8 SR AM l^ llC R a iM 128K X 8 SRAM 3.3V OPERATION WITH SINGLE CHIP ENABLE FEATURES • High speed: 20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

Contextual Info: CY62128E MoBL 1-Mbit 128K x 8 Static RAM 1-Mbit (128K x 8) Static RAM Features Functional Description The CY62128E[1] is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

DP3S128X32Y5

Contextual Info: 4 Megabit 3.3 Volt High Speed SRAM DP3S128X32Y5 ADVANCED INFORMATION DESCRIPTION: The DP3S128X32Y5 is the 128K x 32 SRAM module the utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 128K x 8 SRAM’s that are configured as 128K x 32.

GALVANTECH

Abstract: GVT72024A8
Contextual Info: GALVANTECH, INC. GVT72024A8 TRADITIONAL PINOUT 128K X 8 SRAM ASYNCHRONOUS SRAM 128K x 8 SRAM WITH TWO CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • The GVT72024A8 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high performance,

GVT72024A8

Abstract: Galvantech
Contextual Info: GALVANTECH, INC. GVT72024A8 TRADITIONAL PINOUT 128K X 8 SRAM ASYNCHRONOUS SRAM 128K x 8 SRAM WITH TWO CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • The GVT72024A8 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high performance,

Contextual Info: AL5DS9xx9V Data Sheets -1M bit Dual-Port SRAM AL5DS9389V -64K x 18 bits, 3.3V, Synchronous AL5DS9289V -64K x 16 bits, 3.3V, Synchronous AL5DS9199V -128K x 9 bits, 3.3V, Synchronous AL5DS9099V -128K x 8 bits, 3.3V, Synchronous Preliminary AL5DS9389V/9289V/9199V/9099V

Contextual Info: AL5DS9xx9V Data Sheets -1M bit Dual-Port SRAM AL5DS9389V -64K x 18 bits, 3.3V, Synchronous AL5DS9289V -64K x 16 bits, 3.3V, Synchronous AL5DS9199V -128K x 9 bits, 3.3V, Synchronous AL5DS9099V -128K x 8 bits, 3.3V, Synchronous Preliminary AL5DS9389V/9289V/9199V/9099V

HX6228

Abstract: honeywell memory sram
Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

CY14b101Q3

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1 Mbit 128K x 8 Serial SPI nvSRAM Features Functional Overview • 1 Mbit Nonvolatile SRAM ❐ Internally organized as 128K x 8 ❐ STORE to QuantumTrap Nonvolatile Elements initiated automatically on Power Down (AutoStore) or by user using HSB

Contextual Info: AL5DS9xx9V Data Sheets -1M bit Dual-Port SRAM AL5DS9389V -64K x 18 bits, 3.3V, Synchronous AL5DS9289V -64K x 16 bits, 3.3V, Synchronous AL5DS9199V -128K x 9 bits, 3.3V, Synchronous AL5DS9099V -128K x 8 bits, 3.3V, Synchronous Preliminary AL5DS9389V/9289V/9199V/9099V