30A01 Search Results

Contextual Info: Ordering number : ENN7509 30A01C 30A01C PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2018B Features • • 0.4 0.5 •

30A01SP

Abstract: ENN7512
Contextual Info: Ordering number : ENN7512 30A01SP PNP Epitaxial Planar Silicon Transistor 30A01SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2033A Features 0.4 0.5 15.0

30A01M

Contextual Info: 30A01M SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 43f NF 1 IKF 70m NE 2 NR 1 IKR 30m NC 2 IRB 2m RE 300m XTB 0.8 XTI 3 VJE 700m TF 250p VTF 5 PTF VJC 600m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V Parameter

75113

Abstract: 30A01S
Contextual Info: Ordering number : ENN7511 30A01S PNP Epitaxial Planar Silicon Transistor 30A01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2106A Features • • • [30A01S]

30A01C

Contextual Info: Ordering number : ENN7509 30A01C PNP Epitaxial Planar Silicon Transistor 30A01C Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2018B Features • • 0.4 0.5 •

D2006

Abstract: 30A01M 6M100
Contextual Info: 注文コード No. N 7 5 1 0 30A01M 三洋半導体データシート N 30A01M PNP エピタキシャルプレーナ形シリコントランジスタ 低周波一般増幅用 用途 ・低周波電力増幅ミューティング回路。 特長 ・電流容量が大きい。

Contextual Info: Military EEPROM Products 128Kx8/64Kx16/32Kx32, 55 - 250ns, PGA 30A014-20 D 1 Megabit CMOS EEPROM DPE3232V DESCRIPTION: The DPE3232V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 32K x 32, 64K X 16 or 128K x 8.

DPE32X32XJ3

Contextual Info: Military EEPROM Products 128Kx8/64Kx16/32Kx32, 55 - 250ns, PGA 30A014-20 D 1 Megabit CMOS EEPROM DPE32X32XJ3 ADVANCED INFORMATION DESCRIPTION: The DPE32X32XJ3 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 32K x 32, 64K X 16 or 128K x 8.

DPE128X32XJ3

Contextual Info: 512Kx8/256Kx16/128Kx32, 120 - 250ns, PGA 30A014-25 D 4 Megabit CMOS EEPROM DPE128X32XJ3 ADVANCED INFORMATION DESCRIPTION: The DPE128X32XJ3 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 128K X 32, 256K X 16 or 512K X 8.

30A01M

Contextual Info: Ordering number : ENN7510 30A01M PNP Epitaxial Planar Silicon Transistor 30A01M Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2059B Features • 0.3 0.15 3 0.425

ic 75202

Abstract: 30A01SS
Contextual Info: 5Ordering number : ENN7520 30A01SS PNP Epitaxial Planar Silicon Transistor 30A01SS Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2159A Features • 0.3 Side View

30A01S

Abstract: 75113
Contextual Info: Ordering number : ENN7511 30A01S PNP Epitaxial Planar Silicon Transistor 30A01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2106A Features • • • [30A01S]

05A01

Abstract: 05003HR-26A01
Contextual Info: 0.50mm 0.02" PITCH CONNECTOR Material FPC/FFC Connector Housing 05003HR-00A01/2 Series SMT, ZIF(Bottom Contact Type) Right Angle I/NO 1 2 3 DESCRIPTION HOUSING ACTUATOR TERMINAL TITLE 05003HR 05003AS 05003TR MATERIAL PA46, PA6T, LCP, UL 94V Grade PPS, UL 94V Grade

30021

Abstract: L48C L41C IC L44C DATASHEET L30C l31c L43C ORSO42G5 ORSO82G5 ORT42G5
Contextual Info: ORCA ORSO42G5 and ORSO82G5 0.6 - 2.7 Gbps SONET Backplane Interface FPSCs August 2005 Data Sheet Introduction Lattice has extended its family of high-speed serial backplane devices with the ORSO42G5 and ORSO82G5 devices. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSO42G5 and

Contextual Info: DESCRIPTION: The Dense-Pac 32K X 8S family consists of CM OS +5V 32K X 8 Electrically Eraseable Programmable Read-Only Memories EEPROM s . These EEPROM modules are ideal for applications which require low power consumption, non­ volatility and in-system reprogrammability. The endurance,

Contextual Info: DPS832V Dense-Pac Microsystems, Inc. ^ CMOS SRAM VERSAPAC MODULE DESCRIPTION: The DPS832V is a 66-pin Pin Grid Array PGA consisting of four 8K X 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired c e ra m ic su b stra te w ith m a tc h in g th erm al

Contextual Info: DENSE-PAC 1 Megabit UVEPROM M ICROSYSTEM S DPV3232VA DESCRIPTION; The DPV3232VA is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.

Contextual Info: 1 Megabit CMOS SRAM D EN SE-PA C DPS3232V M I C R O S Y S Ï li M S DESCRIPTION: The DPS3232V is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matching thermal coefficients. The LCCs are

Contextual Info: DENSE-PAC MICROSYSTEMS Dense-Pac Microsystems, Inc. D7E D | 575=143,5 □ □ □ □ 5 1 5 DPV27C256 CMOS EPROM 1 f~ 32KX8 MONOLITHIC D E S C R IP T IO N : The DPV27C256-200, -250 is a high-speed 32KX 8 UV eraseable and electrically programmable read only memoiy EPROM

Contextual Info: DPE832V 8K X 32 CMOS EEPROM VERSAPAC D ESC R IPT IO N : The DPE832V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 8KX32, 16KX16 or 32K X 8. The module is built with four low-power CMOS 8K X 8

Contextual Info: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM DPZ128X32VT/DPZ128X32VTP MICROSYSTEMS DESCRIPTION: The DPZ128X32VT/VTP is a 4 megabit 5 Volt only C M O S Flash E E P R O M (E le c tric a lly In-System Programmable and Erasable ROM memory) module. The module is built with four 128K x 8 FLASH memory

Contextual Info: □PM Dense-Pac Microsystems, Inc. D PV 12832 V 128K X 32 UVEPROM VERSAPAC O D ESC R IPT IO N : The DPV12832V is a 66-pin Pin Grid Array PGA consisting of four 128K X 8 U V EP R O M devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matching thermal coefficients.

Contextual Info: Dense-Pac Microsystems, Ina D PE45128 512KX8 CMOS EEPROM MODULE O DESCRIPTION: The DPE45128 is a four Megabit Electrically Erasable and Programmable Read O nly Memory EEPROM module organized as 512K X 8 bit, consisting of sixteen 32K X 8 EEPROM 's plus complete signal and I/O

Contextual Info: DPE32X32V-70I-Tl DENSE-PAC 32K X 32 CMOS EEPROM VERSAPAC M i€ R O S Y S î E MS DESCRIPTION: The DPE32X32V-70I-TI is a high-performance Electrically Erasable and Programmable Read Only Memory EEPR O M module to be produced for Ratheon T.l. Systems. The