120N15P Search Results

Contextual Info: IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS = ID25 = RDS on ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150

4900 SIEMENS

Contextual Info: Advanced Technical Information IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Maximum Ratings TO-3P (IXTQ) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

120N15P

Contextual Info: IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS = ID25 = RDS on ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS = 150 V ID25 = 120 A Ω RDS on ≤ 17 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions Maximum Ratings VDSS VDGR

IXFH120N15P

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal

DIODE 1334

Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205