120KN Search Results

Contextual Info: 5 % Resistor Assortment Kit 100 V alu es Features: • 3 Storage Systems • • • • E 24 Values Ohm on l.on 4.70 ion i2n isn isn 2on Excellent For Labs Design In & Prototype Replaceable When Empty Optional Drawer Set Ohm 75n 82n loon i2on ison ison 2oon

Contextual Info: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension

melody IC

Abstract: 8 sound effects generator IC 16-DIP HT2887 8050 s cmos sound generator d 9329 TOY SOUND sound effects chip SK 8050 S
Contextual Info: HOLTEK r r HT2887 Sound Effect and Melody Generator Features Auto power-off function Directly drive LED s or a piezo L O l or L 0 2 pad by m ask option 128-note melody PLA memory 256-note sound effect memory 128kHz system clock Minimum external components

M13S32321A

Contextual Info: ESMT M13S32321A DDR SDRAM 256K x 32 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )

2x lines of 5X7 dots matrix of characters

Contextual Info: O K I Semiconductor MSM6562B-XX DOT MATRIX LCD CONTROLLER WITH 16 DOT COMMON DRIVER AND 100 DOT SEGMENT DRIVER G EN ERAL DESCRIPTION T he MSM6562B-xx controls a character type dot m atrix L C D in com bination w ith an 8-bit or 4bit m icrocontroller. T h e MSM6562B-xx can control a d isp lay of up to 40 characters. W it h the d isp lay data serial

Contextual Info: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003)

Contextual Info: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003)

DDR266

Contextual Info: Memory Module Specification KVR266X72C2/256 CL2 DDR266 SDRAM 184-Pin ECC Dual In-Line Memory Module DIMM DESCRIPTION: This document describes ValueRAM's 32M x 72-bit (256MB), CAS Latency 2 (CL2) SDRAM (Synchronous DRAM) DDR266 ECC memory module. The components on this

M1C2951

Abstract: M10295 MIC295103BN
Contextual Info: T MICREL SEMIC ONDU CTOR 34E d a boafian dgooshb s e s m r l M1C2950-02/03 and M1C2951-01/02/03 E fiE S S 1! Adjustable Micropovver Voltage Regulators Preliminary Information 7 ^ S S - l l - 2 3 General Description Features The MIC2950 and MIC2951 are"bulletproof" micropower

15VPH

Abstract: I-10K
Contextual Info: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATION! SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only '07 SERIES FX-107 GENERAL DESCRIPTION The FX-107, FX-207 and FX-307 are a powerful and flexible fam ily of high performance m onolithic signalling devices,

Contextual Info: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2007 Revision : 1.0 1/48 ESMT M13S128168A Operation temperature condition -40°C~85°C

rc0510

Abstract: RC05 RC0910
Contextual Info: Leaded RF Chokes – RC Series RC Series Features l l l Product Identification Low cost Wide range of inductance High reliability Electrical Parameters RC0508£-1R0K-N 1.0 7.96 30 155 D.C Resistanc e Ω Max 0.186 RC0508£-1R2K-N 1.2 7.96 30 145 0.15 1670

M13S256328A

Contextual Info: ESMT M13S256328A DDR SDRAM 2M x 32 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )

M13S64164A

Contextual Info: ESMT Preliminary M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007

rgn354

Abstract: RGN2004 VCL11 Telefunken ecl11 ECL11 funkschau REN1004 RE074 ebl21 rgn 1064
Contextual Info: Preis 2.50 RM FUNKSCHAURöhrenaustauschtabelle Austausch deutscher Röhren untereinander Von Fritz Kunze Sonderdruck au s der FUNKSCHAU A usgabe 1944 FUNKSCHAU-VERLAG / MÜNCHEN 15 Austausch deutscher Röhren untereinander W eshalb eine neue Röhrenliste?

Contextual Info: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and

rc0510

Contextual Info: Leaded RF Chokes – RC Series RC Series Features l l l Product Identification Low cost Wide range of inductance High reliability Electrical Parameters RC0508£-1R0K-N 1.0 7.96 30 155 D.C Resistanc e Ω Max 0.186 RC0508£-1R2K-N 1.2 7.96 30 145 0.15 1670

vr 0511 mb

Abstract: ic 4063 AM 4063 pin diagram of ic 4053 MB4063 A9708
Contextual Info: 6-CHANNEL 8-BIT AID CONVERTER SUBSYSTEM F U JIT S U MB 4053 MB 4063 May 1986 E d itio n 3.0 6-CHANNEL 8-BIT A/D CONVERTER SUBSYSTEM The Fujitsu MB 4053 and MB 4063 are 6-channel, 8 -bit, single-slope A /D converter subsystem designed to be used in a microprocessor based data con­

SL1016

Abstract: PBY160808T-201Y-N PBY160808T-600Y-N PBY160808T-601Y-N PBY100505T-121Y-N PBY160808T-110Y-N UPB321611T-151Y-N smd diode Lf PBY201209T-601Y-N PBY321611T-601Y-N
Contextual Info: www.yageo.com RoHS Compliant ISO-9001, ISO-14001 CERTIFIED INDUCTORS / BEADS INDEX 4 18 21 28 33 37 42 48 51 55 58 62 66 69 72 78 81 84 88 94 97 106 110 115 129 134 137 145 148 151 156 158 161 164 168 172 175 179 183 186 SMD Chip Beads [SB/NB/HF/GB/PB/UPB Series]

PBY 386

Abstract: SL1016 PBY160808T-601Y-N LVS404018-3R3 PBY321611T-601Y-N PBY160808T-110Y-N NBQ160808T-241Y-N SBCB656030T-301-N PBY160808T-121Y-N UPB453215T-700Y-N
Contextual Info: 奇力新2011封面-1.jpg 1224 x 1745 x 24 Molding Power Choke – MHCC,MHCI Series MHCCMHCI Series MHCC series is designed for low profile type with low RDC and ultra large current. Its molded magnetic shielded type is suitable for high-density mounting and ultra low buzz noise. Soldering conditions

LM321

Abstract: LM221 LM121A op amp LM321
Contextual Info: LM221/LM321 National Semiconductor LM221/LM321 Precision Preamplifiers General Description The LM221 series are precision preamplifiers designed to operate with general purpose operational amplifiers to dras­ tically decrease dc errors. Drift, bias current, common mode

KVR266X64C2

Abstract: DDR266
Contextual Info: Memory Module Specification KVR266X64C2/256 CL2 DDR266 SDRAM 184-Pin Dual In-Line Memory Module DIMM DESCRIPTION: This document describes ValueRAM's 32M x 64-bit (256MB), CAS Latency 2 (CL2) SDRAM (Synchronous DRAM) DDR266 memory module. The components on this module

Contextual Info: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003)

Contextual Info: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )