1200V Search Results

SF25G13

Abstract: SF25L13 SF25D SF25G TOSHIBA THYRISTOR
Contextual Info: THYRISTOR S F 2 5 D , F , G , I , L , N , Q 1 3 SILICON DIFFUSED TYPE Unit in mm MEDIUM POWER CONTROL APPLICATIONS. ¿20MAX . Repetitive Peak Off-State Voltage : } -200 - 1200V Repetitive Peak Reverse Voltage :V r r m . Average On-State Current :I'j^y) = 25A

DIODE B12

Abstract: B12 DIODE TSG15N120CN
Contextual Info: TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

sch2080

Abstract: SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM
Contextual Info: SCH2080KE SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed

IEC60721-3-3

Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
Contextual Info: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Storage of Products Supplied by Infineon Technologies

Abstract: IEC60721-3-3 IEC60721 L4926E
Contextual Info: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Contextual Info: APTM120A20DG Phase leg with Series diodes MOSFET Power Module VBUS G1 S1 G2 OUT 0/VBUS S2 VDSS = 1200V RDSon = 200m typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features  Power MOS 7 MOSFETs - Low RDSon

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: APTM120U10SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel

MIMMG150DR120UZA

Contextual Info: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG150DR120UA

Contextual Info: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

Rectifiers

Abstract: MIMMD160S120B
Contextual Info: MIMMD160S120B 1200V 160A Rectifier Diode Module RoHS Compliant PRODUCT FEATURES • · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package

MIMMG200DR120UZA

Contextual Info: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG40H120XB6TN

Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
Contextual Info: MIMMG40H120XB6TN 1200V 40A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current

MIMMG150W120X6TN

Contextual Info: MIMMG150W120X6TN 1200V 150A Six-Pack Module RoHS Compliant FEATURES □ High level of integration 3 □ IGBT CHIP Trench+Field Stop technology □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery

MIMMG150DR120UK

Abstract: AC welder circuit diagram
Contextual Info: MIMMG150DR120UK 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG75SR120B

Contextual Info: MIMMG75SR120B 1200V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module

APT0406

Abstract: APT0502
Contextual Info: APTGT100A120T3AG Phase leg Trench + Field Stop IGBT Power Module 29 30 31 32 VCES = 1200V IC = 100A @ Tc = 100°C Application 13 • • • • 4 3 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features 26 27

Vn36

Abstract: CM100RX-24A
Contextual Info: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake

APTGF25H120T1G

Abstract: APT0502 APT0406
Contextual Info: APTGF25H120T1G Full - Bridge NPT IGBT Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 Q2 1 Q4 CR2 CR4 9 7 8 11 10 NTC 12 VCES = 1200V IC = 25A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

APT0406

Abstract: APT0502
Contextual Info: APTGF15H120T1G Full - Bridge NPT IGBT Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 1 Q4 Q2 CR2 CR4 7 9 8 11 10 NTC 12 VCES = 1200V IC = 15A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

APT0502

Contextual Info: APTGL325SK120D3G Buck Chopper Trench + Field Stop IGBT4 Power Module Q1 3 4 5 1 2 VCES = 1200V IC = 325A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop

CM900DU-24NF

Contextual Info: MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE CM900DU-24NF ● IC . 900A ● VCES . 1200V ● Insulated Type ● 2-elements in a pack