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    SCT2080KE Search Results

    SCT2080KE Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SCT2080KEC
    		ROHM FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 40A TO-247 Original PDF 14
    SCT2080KEHRC11
    		ROHM Semiconductor SICFET N-CH 1200V 40A TO247N Original PDF 1.07MB
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    SCT2080KE Price and Stock

    ROHM Semiconductor

    ROHM Semiconductor SCT2080KEGC11

    Trans MOSFET N-CH SiC 1.2KV 40A 3-Pin(3+Tab) TO-247N Tube
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    Verical () SCT2080KEGC11 790 4
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    SCT2080KEGC11 97 1
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    SCT2080KEGC11 58 4
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    Mouser Electronics SCT2080KEGC11 722
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    Arrow Electronics SCT2080KEGC11 97 9 Weeks 1
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    Newark SCT2080KEGC11 Bulk 429 1
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    TTI SCT2080KEGC11 Tube 450
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    Quest Components SCT2080KEGC11 678
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    TME SCT2080KEGC11 1
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    Avnet Silica SCT2080KEGC11 27 Weeks 450
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    ROHM Semiconductor SCT2080KEHRC11

    Trans MOSFET N-CH SiC 1.2KV 40A 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
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    Verical () SCT2080KEHRC11 450 2
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    SCT2080KEHRC11 317 1
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    SCT2080KEHRC11 262 2
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    SCT2080KEHRC11 100 3
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    Mouser Electronics SCT2080KEHRC11 75
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    Arrow Electronics SCT2080KEHRC11 317 23 Weeks 1
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    Newark SCT2080KEHRC11 Bulk 1
    • 1 $42.02
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    Quest Components SCT2080KEHRC11 569
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    TME SCT2080KEHRC11 712 2
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    Avnet Silica SCT2080KEHRC11 27 Weeks 450
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    ROHM Semiconductor SCT2080KEC

    MOSFET, N CHANNEL, 1.2KV, 35A, 0R08, TO-247-3; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Product Range:- RoHS Compliant: Yes
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    Vyrian SCT2080KEC 17,645
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    ROHM Semiconductor SCT2080KEGC11Z

    Transistor MOSFET N-CH 1200V 40A 3-Pin TO-247N Tube (Alt: SCT2080KEGC11Z)
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    Avnet Asia SCT2080KEGC11Z 32 Weeks 450
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    SCT2080KE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel


    Original     		SCT2080KE O-247 R1102B PDF

    Contextual Info: SCT2080KE N-channel SiC power MOSFET Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode


    Original     		SCT2080KE O-247 R1102B PDF

    dc/tx/1/2/PS/SCT2080KE

    Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 (1) (2) (3) Inner circuit (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) (1) Gate (2) Drain (3) Source


    Original     		SCT2080KE O-247 R1102S dc/tx/1/2/PS/SCT2080KE PDF

    sct2080ke

    Abstract: SCT2080 sct2080k MOSFET 1200V ROHM Solar Charge Controller driver circuits A1412
    Contextual Info: SCT2080KE SCT2080KE N-channel SiC power MOSFET Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain


    Original     		SCT2080KE O-247 SCT2080KE R1120A SCT2080 sct2080k MOSFET 1200V ROHM Solar Charge Controller driver circuits A1412 PDF

    SiC POWER MOSFET

    Abstract: SCT2080 MOSFET 1200V ROHM
    Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source


    Original     		SCT2080KE O-247 SCT2080KE R1102S SiC POWER MOSFET SCT2080 MOSFET 1200V ROHM PDF

    SCT2080KE

    Abstract: SCT2080
    Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode


    Original     		SCT2080KE O-247 R1120A SCT2080KE SCT2080 PDF

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ PDF