1200 - 1400 MHZ L-BAND APPLICATIONS Search Results

L-Band 1200-1400 MHz

Abstract: diode gp 429 Radar x band radar HV400
Contextual Info: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor

transistor s 1014

Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Contextual Info: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor

ALR006

Abstract: ASI10510
Contextual Info: ALR006 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR006 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 9.5 dB at 6.0 W/ 1400 MHz • Omnigold Metalization System MAXIMUM RATINGS

"RF Power Transistor"

Abstract: 1200 - 1400 MHz L-Band Applications RZ1214B35Y
Contextual Info: RZ1214B35Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B35Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 35 W/ 1400 MHz • Omnigold Metalization System

RZ1214B65Y

Abstract: "RF Power Transistor" RF NPN POWER TRANSISTOR 2.5 GHZ
Contextual Info: RZ1214B65Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B65Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 80 W/1400 MHz • Omnigold Metalization System

MIL-STD-750D

Abstract: L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVV1214-25 HVVi Semiconductors
Contextual Info: HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty DESCRIPTION PACKAGE The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from

ALR060

Abstract: ASI10513 1402 Transistor
Contextual Info: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz

L-Band 1200-1400 MHz

Abstract: 4884 MOSFET HVV1214-100 radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET
Contextual Info: The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty For Ground Based Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

L-Band 1200-1400 MHz

Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
Contextual Info: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description

ATC100B390

Contextual Info: STAC1214-250 LDMOS L-band radar transistor Datasheet - preliminary data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 250 W with 14 dB gain over 1200 1400 MHz • ST air cavity / STAC package Description STAC265B

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2233 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features • • • • • • • 1200 - 1400 MHz 50 VOLTS POUT = 325 WATTS GP = 6.4 dB MINIMUM 15:1 VSWR CAPABILITY

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2233 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1200 - 1400 MHz 50 VOLTS POUT = 325 WATTS GP = 6.4 dB MINIMUM 15:1 VSWR CAPABILITY

Contextual Info: 1214GN-280LV 280 Watts - 50 Volts, 200 s, 20% L-Band Radar 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 16.5dB

Contextual Info: 1214GN-280 280 Watts - 60 Volts, 300 s, 10% L-Band Radar 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-280 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 17dB gain,

AM1214-300

Contextual Info: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base

RX1214B300Y

Contextual Info: RX1214B300Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI RX1214B300Y is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° 2xB C F E D G FEATURES: I • Internal Input/Output Matching Network

AM81214-060

Abstract: transistor a 726
Contextual Info: AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network

bfr 91

Abstract: THOMSON-CSF CANAL
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (MHz) le l\IF Cl2e @ C22b* ImA) (pF) (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72 15

Contextual Info: 1214GN-550V 550 Watts - 50 Volts, 300 s, 10% Broad Band 1200 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-550V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain,

transistor C 2615

Contextual Info: 1214GN-180LV 180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1214GN-180LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.6dB

Contextual Info: AWB459 Wide band MMIC Amplifier Features ž 20 dB Gain at 1200 MHz ž 23.5 dBm P1dB at 1200 MHz ž 38 dBm Output IP3 at 1200 MHz ž 1.25 dB NF AWB459 ž +5 V Single Supply Package Style: SOT89 Typical Performance Supply Voltage = +5 V, TA = +25 °C, Z0 = 50 W

power tr unit j122 5 pin

Abstract: power tr unit j122 PTVA120251EA lm7805 3A A 4562 L 4440 J233 AG J56-1
Contextual Info: PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

BF272

Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72

Contextual Info: Surface Mount ADE-17H+ ADE-17H Frequency Mixer Level 17 LO Power +17 dBm 100 to 1700 MHz Maximum Ratings Operating Temperature Storage Temperature Features • • • • • -40°C to 85°C -55°C to 100°C RF Power 200mW IF Current 40mA Pin Connections