11ECTO Search Results

Contextual Info: Ratings and C haracteristics 2 1. Out 1ine Drawings T0-3PF 2. Absolute Maximum Ratings S C 4 5 of 3 F u ji 8 Power Transistor R Tc=25°C Symbol Item Maximum Rating Collector-Base Voltage Vcao 9 0 0 Co 11ecto r-Em i tte r Vo 1tage Vceo 8 0 0 Emitter-Base Voltage

Contextual Info: APT60GT60BR ADVANCED POW ER Te c h n o l o g y 600V 116A Thunderbolt IGBT The Thunderbolt IGBT is a new generation ot high voltage power IGBTs. Using Non-Punch ThroughTechnology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: SOLI» STATE DEVICES INC 12E D |fi3bLQll D00207S S | Pr eliminary Data Sheet f - 32-07 .-• .— — — - ■ ■ SFT3997 SSDI 5 AMP HIGH SPEED NPN TRANSISTOR 14849 FIRESTONE BLVD. LA MIRADA, CA. 90638 213 921-9660 FAX (213) 921-2396 150 VOLTS e; s t y l e :

KPC357NT

Contextual Info: PRODUCT SPECIFICATION Photocoupler cosmo KPC357NT ELECTRONICS CO.,LTD. SHEET 1 OF 6 Mini-flat package General purpose Photocoupler • Features 1. Opaque type,mini-flat package. 2. Subminiature type The volume is smaller than that of our conventional DIP type by as far as 30%

transistor CD 910

Contextual Info: PRELIMINARY DATA SHEET SSDI y oo S P T 3571 HIGH FREQUENCY TRANSISTOR NPN CASE STYLE 14830 VALLEY VIEW LA MIRADA, CA.90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES ► t t 900 MHz fT MIN, 4 GHz fT MAX GOLD EUTECTIC DIE ATTACH LOW NOISE FIGURE < 4 dB

18AF

Abstract: BUT18AF BUT18F UT18 BUT18
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE T> m 0020441 3Tb I IAPX BUT18F BUT18AF SILICO N D IFFU SED PO W ER T R A N SISTO R S High-voltage, high-speed, glass-passivated npn power transistors in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control

BQX54

Abstract: BCX56 BCX54 71A marking BCX51 BCX52 BCX53 BCX54-10 BCX54-16 BCX55
Contextual Info: • bhS3^31 0024tD&#39;ì 1T3 HiAPX N AUER PHILIPS/DISCRETE BCX54 BCX55 BCX56 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

B179G

Abstract: SFT177G SFT179G
Contextual Info: PRELIMINARY DATASHEET SFT179G 7 AMP HIGH PNP SSDI ENERGY 14849 FIRESTONE BLVD. LA MIRADA, CA 90638 TEL: 213 921-9660 FAX: (213) 921-2396 TRANSISTOR 80 VOLTS FEATURES t t ► t t t MAXIMUM DESIGNED FOR COMPLIMENTARY USE WITH SFT177G VERY RUGGED, SINGLE DIFFUSED CONSTRUCTION

KPC353T

Contextual Info: PRODUCT SPECIFICATION Photocoupler cosmo ELECTRONICS CO.,LTD. KPC353T High Reliability Photocoupler • Features 1. With base terminal. 2. Applicable to infrared ray reflow. 230° C, MAX. 30 seconds 3. High isolation voltage. (Viso : 3750Vrms) 4. Mini-flat package.

MS6M0255

Contextual Info: This materiol and the information herein it the p ro p erty of Fu|t Elecinc Co .Lid They shall bo neither reproduced, copied lorn, or disclosod in any way whatsoever for iha use of any thiid parly.nof usod for itie manufacturing purposes without the express w ritten consent of Fuji Electric Co. Ltd.

fuji igbt 300v 20a

Contextual Info: This m aieriol and the Information herein Is ha properly of FujS Electric Co .Ltd They shall be neither reproduced, cop ie d lent, or disclosed in any way w hatsoever (or the use of any third party.nor used lor the manufacturing purposes w ithout the express written con sent of Fu|l Electric Co. Ltd.

TH50

Abstract: fuji igbt tentative
Contextual Info: S P E C I F I C A T I ON TENTATIVE Product Name : T M B R 1 5 P E l l l Type Name This m a le iia l nod (he inform ation heicn is llu; p io p c i ty of Fu|i £ Ite Inc Co.Lid They shüll ht* neither lepiuduted co p im i lent 01 disclosed in any way w h a ts o e v e i loi the usi; ol a n y

Contextual Info: Preliminary Data Sheet HOE D SOLID STATE DEVICES INC SLC4 - 6T i H I G H M O U N T 800 C A S E 5 T Y I 4-PIN L.C.C. SSDI AMP V O L T A G E . S U R F A C E asbton oooans b N P N 14849 FIRESTONE BLVD. LA MIRADA, CA 90638 TEL: 213 921-9660 FAX: (213) 921-2396

Contextual Info: VKILK itLHNULQ&Y INC 4fiE D • L 7 T S 5 B 0 D0D14flT m ^ ■ OTK Product Bulletin May 1989 * £ } /• U ^ /^ D T C I^ r lt lV Hi-Rel Slotted Optical Switches ' l Type 0PB870N Series ET s <2> - A N O O E ID E N T IF IE R BOTTOM VIEW 495 2 57 475(2 07) '

Contextual Info: T - 3 3 - / jT Prel i m i n a r y Data Sheet 1SE D Jfl3bb011 ODOEDfl? T | SOLID STATE DEVICES INC SFT1618 SSDI 10 AMP HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS CASE STYLE TO-3 * * t t * * 14830 VALLEY VIEW LA MIRADA, C A . 90638 213 921-9660 TWX 910-583-4807

Contextual Info: X Target 1. Outline D r a w i n g Specification Unit of 1 M B I 4 0 O S A - 1 2 0 : mm ô-g > ì 3 °ï S-c 8 « o t> 3 il à 'é » S e "D •£ Q. *13 Jfoi w 0> « c o B O > *c « o -tr O S “ ÜJÎF 5 ÍÉ ° •£I *5 5 r' rce wO 5u ■C 3 ’.s x> V

Contextual Info: M SPECIFICATION DEVICE NAME :_ I G B T TYPE NAME : 1MBH1 5 D - Q 6 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D A TE NAME APPROVED Fuji Electric Co,Ltci DRAWN CHECKED 1/12 H04-004-07 Ratings and characteristics of Fuji IGBT

2N6294

Abstract: 2N6297 2N6295 2N6296 ic1.5a
Contextual Info: Datasheet 2N6294 2N6295 NPN 2N6296 2N6297 PNP C OM P LE ME NT AR Y SILICON DARLI NG T O N POWER TR AN SISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors

PZTA63

Abstract: PZTA64
Contextual Info: • bbSBTBl DD2b023 TbE H A P X N AMER PH ILIPS/DISCRETE PZTA63 PZTA64 L7E » SM ALL-SIG NAL DARLINGTON TRANSISTORS PIMP small-signal D a rlin g to n transistors in a m icro m in ia tu re SM D envelope SO T-223 . Designed p rim a rily f o r p re a m p lifie r in p u t applications requiring high in p u t impedance.

Contextual Info: pa rt y written nor the in any for the way herein neither w hatsoever be is thfc the use purposes for o any w ith o u t of cop ied, property reproduced, m an ufacturin g s h a ll in for m atio n c o n s e n t of Fuji EJectr ic Co. .Llii. used disclosed or

6MB 125 S-1 2 0 l

Abstract: DT225 75L-060 BT600 6MB 125 S-120
Contextual Info: 6MBI75L-060 _ _ . _ IGBT MODULE L series 6-Pack IGBT Wï Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter for M otor Drive • AC and DC Servo Drive A m p lifier • U ninterruptible Pow er Supply

IC15AV

Contextual Info: M SPECIFICATION DEVICE NAME :_ I G B T TYPE NAME : 1MBH1 5 D - Q 6 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D A TE NAME APPROVED Fuji Electric Co,Ltci DRAWN CHECKED 1/12 H04-004-07 Ratings and characteristics of Fuji IGBT

Mil-S-45743

Abstract: OPB slotted optical switch OPB870T QPB870T 0PB872
Contextual Info: OPTEK T E CH NO LO GY INC 4flE D b7TflSS0 D O O m T3 t.7T OTK Product Bulletin OPTEK May 1989 Tm-13 Hi-Rel Slotted Optical Switches Type QPB870T Series Features A b so lu te M a x im u m R a tin g s TA = 25°C unless otherwise noted • Non-contact switching

irgph30k

Abstract: IRGPH30M irgph30
Contextual Info: International lO R Rectifier PD -9 .1 5 8 0 IRG4PH30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR F e a tu re s a • High short circuit rating optimized for motor control, tsc = 10|J.s, V cc = 720V , T j = 125°C, VGE= 15V