11B2 Search Results

H11B255

Contextual Info: G E SOLID STATE DE ^3875001 Û 0 M 7 1 5 5 | 01 Optoelectronic Specifications i Photon Coupled Isolator 11B255 SYM30L Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H 11B255 consists of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington amplifier in a dual in-line package. This device is

Magnecraft

Abstract: C3-r20 POTTER ara120aba RR2KP-U-DC24 KUL11D15D-12 785XBXC-12D 755XBXCD-24D KUL11D15S-12 R50-11A10-120
Contextual Info: Section 7 Cr os s Re fe r e nc e Gu i d e Magnecraft Midtex Potter & Brumfield 711XBXC-12D 711XBXC-24D 711XBXC-48D 711XBXC-110D 619-11B200 619-11C200 619-11D200 619-11F200 KUR-11D15-12 KUR-11D15-24 KUR-11D15-48 KUR-11D15-110 Magnecraft ATC Diversified Time Mark

H11B

Contextual Info: MOTOROLA SC DI O D ES /O PT O b 3 b 7 ESS DüûbbH? b 4E D 1 3 fl MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO c a VDE UL C SA SETI ® SEMKO OEMKO BS NEM KO BABT H11B1* H 11B2* H11B3 [C TR = 500% Min] 6-Pin DIP Optoisolators Darlington Output (Low Input Current)

Contextual Info: H A R R IS SEM IC O N D SECTOR 3?E V m 43QE271 G027172 4 I HAS Optoelectronic Specifications Photon C oupled Isolator H11B1,11B2,H11B3 S Y Ï.B O L - M IN Ga As Infrared E m ittin g D iode & NPN Silicon P hoto-D arlington A m plifier The GE Solid State H 11B 1, H 11B2 and H 11B3 are gallium arsenide,

H11V3

Abstract: H11V1
Contextual Info: _ TH OM SO N/ DISTRIBUTOR SñE D • T0Ebfl73 O n D S ? 4 ci ■ TCSK O ptoelectronic Products O ptoisolators/O ptocouplers Continued Description S u rg e Isolation Voltage R M S Min H11B1 Photo 4 000V 500% H 11B2 Darlington 4000V 200% H 1 1B 3 Output

11B2* Diode

Abstract: 11b3 DIODE 11B2 Diode
Contextual Info: G E SOLI» -DI STATE DE|3ñ?SDñl 0 O I T 710 1 | Optoelectronic Specifications T ^ J'5 5 Photon Coupled Isolator H11B1,11B2,H11B3 SYMJUL Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The G E Solid State H 11B1, H 11B2 and H 11B3 are gallium arsenide,

Contextual Info: SN54CBT16212A, SN74CBT16212A 24ĆBIT FET BUSĆEXCHANGE SWITCHES SCDS007U − NOVEMBER 1992 − REVISED JUNE 2005 D Members of the Texas Instruments D D D D SN54CBT16212A . . . WD PACKAGE SN74CBT16212A . . . DGG, DGV, OR DL PACKAGE TOP VIEW Widebus  Family

Contextual Info: QuickSwitch Products QS316233 High-Speed CMOS QS3162233 QuickSwitch 32:16 Mux/Demux & c lu c T O R , iN c . FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5£2 bidirectional switches connect inputs to outputs • Zero propagation delay, zero ground bounce

32176 Group PWM CODE

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TVL320AIC3106

Abstract: AIC3106 RJ9 connector BLMG1P500SPT TVL320 RPACK8-10 HALO HFJ11-2450E-L21 connector Rj9 HFJ11-2450E-l21 MHC-W21-601
Contextual Info: OMAP-L137 Evaluation Module Technical Reference 2008 DSP Development Systems OMAP-L137 Evaluation Module Technical Reference 511345-0001 Rev. A November 2008 SPECTRUM DIGITAL, INC. 12502 Exchange Drive, Suite 440 Stafford, TX. 77477 Tel: 281.494.4505 Fax: 281.494.5310

10A1

Abstract: 10A2 10B1 11A1 11A2 12A1 12A2 SN74CBT16213 1A227
Contextual Info: SN74CBT16213 24-BIT FET BUS-EXCHANGE SWITCH SCDS026I – MAY 1995 – REVISED NOVEMBER 2001 D D D DGG OR DL PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family 5-Ω Switch Connection Between Two Ports TTL-Compatible Input Levels S0 1A1 1A2

Contextual Info: SN54CBT16212A, SN74CBT16212A 24ĆBIT FET BUSĆEXCHANGE SWITCHES SCDS007U − NOVEMBER 1992 − REVISED JUNE 2005 D Members of the Texas Instruments D D D D SN54CBT16212A . . . WD PACKAGE SN74CBT16212A . . . DGG, DGV, OR DL PACKAGE TOP VIEW Widebus  Family

10B1

Abstract: 10B2 11B1 11B2 12B1 12B2 SN74CBT162292 SN74CBT162292DL
Contextual Info: SN74CBT162292 12-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER WITH INTERNAL PULLDOWN RESISTORS SCDS052E – MARCH 1998 – REVISED OCTOBER 2000 D D D D D D D DGG, DGV, OR DL PACKAGE TOP VIEW Member of Texas Instruments’ Widebus Family TTL-Compatible Control Input Levels

J11B1

Abstract: J9B1 10A1 10B1 10B2 10B3 11A1 11B1 11B3 SN74CBT16214
Contextual Info: SN74CBT16214 3-T0-1 BUS-SELECT SWITCH SCOS008B-MAY 1 9 9 3 - REVISED FEBRUARY 1995 Switch Connection Between Two Ports 5 -Q TTL-Compatible input and Output Levels Packaged in Plastic 300-mil Shrink Small-Outline DL and Thin Shrink Small-Outiine (DGG) Packages

Contextual Info: QuickSwitch Products QS316214 High-Speed CMOS QS3162214 Qu a lity ADVANCE INFORMATION i t p i t a iu S e m ic o n d u c t o r , I n c . pus-Select Switch FEATURES/BENEFITS DESCRIPTION • The Q S 31 6214 provides a set of tw elve high-speed C M O S T T L-com p atib le buses sw itching betw een

Contextual Info: SN74CB3T16212 24ĆBIT FET BUSĆEXCHANGE SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE BUS SWITCH WITH 5ĆVĆTOLERANT LEVEL SHIFTER SCDS157 − OCTOBER 2003 D Member of the Texas Instruments D D D D D D D D D D D D D D Widebus Family Output Voltage Translation Tracks VCC

SN74CBT16233

Contextual Info: SN74CBT16233 16-BIT 1-0F-2 FET MULTIPLEXER/DEMULTIPLEXER SCDS01 OG - MAY 1 995 - REVISED A U G U ST 1998 DGG, DGV, OR DL PACKAGE TOP VIEW 5 -il Switch Connection Between Two Ports TTL-Compatible Input Levels Package Options Include Plastic Thin Shrink Small-Outline (DGG), Thin Very

I3B2

Abstract: J10B1 SN74CBT16212 8B221 10A1 10B1 10B2 11A2 12A2 12B1
Contextual Info: SN74CBT16212 24-BIT BUS-EXCHANGE SWITCH SC DS007A- NOVEMBER 1 9 9 2 - REVISED MARCH 1994 • 5-i2 Switch Connection Between Two Ports • TTL-Compatible Input and Output Levels • Packaged in Plastic 300-mil Shrink Small-Outline DL and Thin Shrink Small-Outline (DGG) Packages

10A1

Abstract: 10A2 11A1 11A2 12A1 12A2 HD74CBT16212A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

10A1

Abstract: 10A2 11A1 11A2 12A1 12A2 HD74CBTS16212A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

ps817

Abstract: 10A1 10B1 10B2 11B1 11B2 12B1 12B2 56-PIN PI3B162292
Contextual Info: PI3B16292 Ω PI3B162292 25Ω

12B2 Diode

Abstract: 10A1 10A2 11A1 11A2 12A1 12A2 SN74CBTLV16212
Contextual Info: SN74CBTLV16212 LOW-VOLTAGE 24-BIT FET BUS-EXCHANGE SWITCH SCDS044E – DECEMBER 1997 – REVISED AUGUST 1999 D D D D D D DGG, DGV, OR DL PACKAGE TOP VIEW 4-Ω Switch Connection Between Two Ports Isolation Under Power-Off Conditions Break-Before-Make Feature

9a2 diode date sheet

Abstract: 12B2 Diode 10A1 10A2 11A1 11A2 12A1 12A2 SN74CBTS16212
Contextual Info: SN74CBTS16212 24-BIT FET BUS-EXCHANGE SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS036B – DECEMBER 1997 – REVISED MAY 1998 D D D D D DGG, DGV, OR DL PACKAGE TOP VIEW 5-Ω Switch Connection Between Two Ports TTL-Compatible Input Levels Latch-Up Performance Exceeds 250 mA Per

93c tssop

Abstract: 93C86
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles 100 Year Data Retention ■ Low Power CMOS Technology ■ 1.8 to 6.0 Volt Operation