11A 113 Search Results

tc 122 25 5

Abstract: tc122 25 9
Contextual Info: Fast Recovery Diodes Part Number VRRM V TO-262 TSF05A20-11A TSF05A40-11A TSF05A60-11A IFAV (A) Condition IFSM (A) VFM(V) IRM（mA) Tjmax 25°C (°C) 25°C trr (ns) Case Outline 5 5 5 Tc=122℃ Tc=118℃ Tc=107℃ 80 80 80 0.98 1.25 1.7 0.03 0.03 0.03 150

w11a

Contextual Info: NO. OF CIRCUITS DIM. "A" DIM. "B" STANDARD OPTIONAL 10A IMPRINT OPTIONAL 11A IMPRINT MATERIAL NUMBER OPTIONAL OPTIONAL SLOTTED SLOTTED SCREW W/10A SCREW IMPRINT 399100402 399120402 OPTIONAL SLOTTED SCREW W/11A IMPRINT 399130402 OPTIONAL STAINLESS STEEL SCREW

MVY Series

Contextual Info: PT6360 Series 11A 12-V Input Adjustable Integrated Switching Regulator SLTS179 JANUARY 2003 Features 12V Input 11A Output Current DSP Compatible >90% Efficiency Adjustable Output Voltage On/Off Inhibit Function Over-Current Protection • Output Remote Sense

2E12

Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3
Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

W12NK90Z

Abstract: STW12NK90Z w12nk90 JESD97 W12NK
Contextual Info: STW12NK90Z N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STW12NK90Z 900V <0.88Ω 11A 230W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

f3055l

Abstract: f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs • 11A, 60V Formerly developmental type TA49158. • rDS ON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

IRFP340

Abstract: TA17424 TB334 T2T-2
Contextual Info: IRFP340 Data Sheet July 1999 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 11A, 400V Ordering Information IRFP340 TO-247 • rDS ON = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: Surface Mount MAV-11A+ MAV-11A Monolithic Amplifier 50Ω 50 to 2000 MHz Features • medium gain • output power, 18.5 dBm typ. CASE STYLE: DH820 PRICE: $1.29 ea. QTY. 30 + RoHS compliant in accordance with EU Directive (2002/95/EC) Applications • cellular

monolithic amplifier MAv 11

Abstract: d 718 mav 11 MAV 8 MCL 1 039 MAV-11A MCL 25 Transistor MAV 1 MAV-TB
Contextual Info: Surface Mount MAV-11A+ MAV-11A Monolithic Amplifier 50Ω 50 to 2000 MHz Features • medium gain • output power, 18.5 dBm CASE STYLE: DH820 Applications + RoHS compliant in accordance with EU Directive 2002/95/EC • cellular • cable • defense communications

irf450

Abstract: diode F451 IRF452 IRF451
Contextual Info: iH A R R is SEUIC0NDUCT0R IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

mosfet motor dc 48v

Abstract: FDT55AN06LA0
Contextual Info: FDT55AN06LA0 N-Channel PowerTrench tm MOSFET 60V, 11A, 55m: Features Applications • RDS on = 44m: ( Typ.)@ VGS = 5V, ID = 11A • Motor / Body load control • Qg(tot) = 7.6nC( Typ.),@ VGS = 5V. • Power train management • Low Miller Charge • DC-AC converters

monolithic amplifier MAv 11

Abstract: MAV-11A Mini-Circuits rf 25
Contextual Info: Surface Mount MAV-11A+ MAV-11A Monolithic Amplifier 50Ω 50 to 2000 MHz Features • medium gain • output power, 18.5 dBm CASE STYLE: DH820 Applications + RoHS compliant in accordance with EU Directive 2002/95/EC • cellular • cable • defense communications

2E12

Abstract: FRM9140D FRM9140H FRM9140R HI 17741 ua 17741
Contextual Info: FRM9140D, FRM9140R, FRM9140H 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: Surface Mount MAV-11A+ MAV-11A Monolithic Amplifier 50Ω 50 to 2000 MHz Features • medium gain • output power, 18.5 dBm typ. CASE STYLE: DH820 PRICE: $1.29 ea. QTY. 30 + RoHS compliant in accordance with EU Directive (2002/95/EC) Applications • cellular

Contextual Info: FAST RECOVERY DIODE 17.7A/100— 200V/trr : 35nsec C16T10F C16T20F C16T20F-11A ° ¡SQUARE - PAK| TO-263AB SMD Packaged in 24mm Tape and Reel : C16T*»F o Tabless T0-220:C16T20F-11A o Dual Diodes — Cathode Common 0 Ultra - Fast Recovery ° Low Forward Voltage Drop

2E12

Abstract: FSS130R4 JANSR2N7399 T0-257AA
Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

25e-4

Abstract: HUF76407D3ST TB334 AN7254 AN7260 AN9321 AN9322 HUF76407D3 HUF76407D3S
Contextual Info: HUF76407D3, HUF76407D3S Data Sheet October 1999 File Number 4664.1 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76407D3S HUF76407D3

mcl m1

Abstract: MCL11 MAV-11A
Contextual Info: Surface Mount Monolithic Amplifier 0.05-2 GHz Product Features • Medium gain • Output power, 18.5 dBm typ. • Aqueous washable MAV-11A+ CASE STYLE: DH820 PRICE: $1.29 ea. QTY. 30 Typical Applications • Cellular • Cable • Defense communications

Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

Contextual Info: FRD Type : C16T20FC16T20F-11A OUTLINE DRAWING FEATURES * SQUARE-PAK TO263AB Case SMD Packaged in 24mm Tape and Reel * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available

Contextual Info: HUFA76407D3, HUFA76407D3S TM Data Sheet November 2000 File Number 4970 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76407D3S HUFA76407D3

mcl-11

Abstract: body marking MCL MAV-11A monolithic amplifier MAv 11 DH820
Contextual Info: Surface Mount Monolithic Amplifier 0.05-2 GHz Product Features • Medium gain • Output power, 18.5 dBm typ. • Aqueous washable MAV-11A+ CASE STYLE: DH820 PRICE: $1.29 ea. QTY. 30 Typical Applications • Cellular • Cable • Defense communications

Contextual Info: HUF75925P3, HUF75925D3ST TM Data Sheet December 2000 File Number 5007 11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-252AA SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75925P3 HUF75925D3ST

C16T20F

Abstract: C16T20F-11A
Contextual Info: FRD Type : C16T20FC16T20F-11A OUTLINE DRAWING FEATURES * SQUARE-PAK TO263AB Case SMD Packaged in 24mm Tape and Reel * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available