1178Q Search Results

CX20206

Abstract: CXA1260Q-Z CXD1177Q CXD1178Q MN65701FHP MN6570F
Contextual Info: - • f f t s a 287 8 f-y h D - A n > ' < - 9 MB40968/40968V £ CXA1260Q -Z CXD1177Q C X D 1178Q MN6556A/S MN6570F MN65701FHP fò T C X 2 0 2 0 6 è ^ ''7 'r i l - y *•:*<*J Ä ± Ä 7 — — V - - 7 ~ - fö T fò T TFS 25 "C 25‘ C 25*C 25"C 2S°C

1178Q

Contextual Info: SONY C X D 1178Q 8-bit 40MSPS RGB 3-channel D/A Converter Description T h e C X D 1 1 7 8 Q is an 8 -b it h ig h -s p e e d D/A converter for video band use. It has an input/output equivalent to 3 channels of R, G and B. It is suitable for use of digital TV, graphic display, and others.

Contextual Info: SONY CXK77V1840GB -8 /1 0 /1 2 262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM P f Q l / 'f j j j f j Q f y Description The CXK77V1840GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This

U716

Abstract: U6915 1178Q
Contextual Info: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page

2Y202

Abstract: dt6168 1N12J
Contextual Info: § d t Integrated DevteTfechnology. Inc CMOS STATIC RAM 16K 4K x 4-BIT) ID T 6 1 6 8 S A ID T 6 1 6 8 L A FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-blt h ig h -sp ee d s ta tic RAM organized as 4 K x 4 . It Is fa b ric a te d u s in g ID T’s hig h -p erform a n ce, high-rellability te c h n o lo g y -C E M O S . T h is state-of-the-art te ch n olo gy, c o m ­

Contextual Info: «5 Enhanced Memory Systems Inc. DM2240Multibank EDO EDRAM 4Mb x 1 Enhanced Dynamic RAM ProductSpecification Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page

Contextual Info: p v F n h a n r pH dm2202/2212 edram V 1Mb x 4 Enhanced tynamic RAM i l Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes

I/DAC80

Abstract: DAC80P
Contextual Info: B U R R -B R O W N • O B DAC80 DAC80P I AVAILABLE IN DIE Monolithic 12-Bit DIGITAL-TO-ANALOG CONVERTERS FEATURES resistors, as well as low integral and differential lin­ earity errors. Innovative circuit design enables the DAC80 to operate at supply voltages as low as ±11.4V

Contextual Info: DM2242/2252 EDRAM Multibank EDO 1Mb x 4 Enhanced Dynamic RAM P55Enhanced Æ È IVfemoiySystems ix. Product Specification Features •8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Mu iti bank Cache ■Fast 4Mbit DRAM Array for 30ns Access to Any New Page

Contextual Info: Enhanced IVfemoiy Systems be. DM 1M36SJ6/DM1M32SJ6 M ultibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mbx36 density by mounting nine1Mbx4EDRAMs, packaged in 28-pin plastic 90U packages, on a multi­