IDT6168 Search Results

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage

Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

idt6168sa

Abstract: IDT6168 6168LA45
Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

5962-86705

Contextual Info: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

3090

Abstract: IDT6168 IDT6168LA IDT6168SA
Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

Contextual Info: INTEGRATE] D E V I C E 3ÔE D • 4 Ô 2 5 7 7 1 OQGfilbl =1 ■ CMOS STATIC RAM 16K 4Kx 4-BIT) IDT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.)

1DT6168SA

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

DSC1121

Abstract: IDT6168 300mil SO20 Package IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

IDT6168

Abstract: IDT6168LA IDT6168SA 6168LA35 6168SA 6168SA20
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

2Y202

Abstract: dt6168 1N12J
Contextual Info: § d t Integrated DevteTfechnology. Inc CMOS STATIC RAM 16K 4K x 4-BIT) ID T 6 1 6 8 S A ID T 6 1 6 8 L A FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-blt h ig h -sp ee d s ta tic RAM organized as 4 K x 4 . It Is fa b ric a te d u s in g ID T’s hig h -p erform a n ce, high-rellability te c h n o lo g y -C E M O S . T h is state-of-the-art te ch n olo gy, c o m ­

ATT7C170P

Abstract: att7c168 ATT7C168J12 ATT7C170
Contextual Info: HHAT&T Data Sheet January 1992 ATT7C168 ATT7C170 Microelectronics High-Speed CMOS SRAM 16 Kbits 4K x 4 , Common I/O Features • High speed — 10 ns maximum access time ■ Plug-compatible with IDT6168 and CY7C168/170 ■ Output enable (ATT7C170 only) ■ Low-power operation

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed (equal access and cycle time) — Military: 1 2 /1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (m ax.) — Com mercial: 1 0 /1 2 /1 5/2 0 /2 5 /3 5 n s (max.)

d1994

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed {equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

29S5

Contextual Info: IN T E GR AT ED DEVI CE SflE D CMOS STATIC RAM 16K 4Kx 4-BIT 4Ö 25 771 001 154 0 247 IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 1 2 /15/2 0/25 /35/45/5 5/70 /85/100ns (max.)

s431 ac

Abstract: s431 A95E
Contextual Info: mE INTEGRATED DEVICE D HÖ25771 □ 0 0 3 5 £i3 7 IDT 6168SA IDT 6168LA CMOS STATIC RAM 1 6K 4K x 4-BIT T - H h ' 1 3 - ö Z FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) Tiie IDT6168 Isa 16,384-blt high-speed static RAM organized as

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption

Contextual Info: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA 1DT6168LA Integrated Device Technology, Inc. nology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 10ns are available. The circuit also

Contextual Info: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated D evice Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15 /2 0 /2 5 /3 5 /4 5 n s (m ax.) — Com mercial: 15 /20/2 5/35 n s (m ax.) • Low power consumption

Contextual Info: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage

IDT6168

Abstract: IDT6168LA IDT6168SA
Contextual Info: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage

d2764c

Abstract: MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706
Contextual Info: m e m o r y pr o d u c ts databook SGS-THOMSON ® ® H lL Ig ? [§ © R IO (g i MEMORY PRODUCTS DATABOOK 1st E D IT IO N JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOM SON’ PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT