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    116BYTE Search Results

    116BYTE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M395T6553GZ4-CE66

    Contextual Info: SERIAL PRESENCE DETECT M395T6553GZ4-E66 512MB FBDIMM : M395T6553GZ4-CE66 Byte # Function Supported Hex Value E66 E66 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage


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    m395t6553gz4-e66512mbm395t6553gz4-ce66116byte+2256byte176byte PDF

    M395T2953GZ4-CE66

    Abstract: CE66 TRP15ns
    Contextual Info: SERIAL PRESENCE DETECT M395T2953GZ4-CE66 1GB FBDIMM : M395T2953GZ4-CE66 Byte # Function Supported Hex Value CE66 CE66 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage


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    m395t2953gz4-ce66116byte256byte176byte+2ce66trp15ns PDF

    M395T5750GZ4-CE66

    Abstract: CE66
    Contextual Info: SERIAL PRESENCE DETECT M395T5750GZ4-CE66 2GB FBDIMM : M395T5750GZ4-CE66 Byte # Function Supported Hex Value CE66 CE66 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage


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    m395t5750gz4-ce66116byte256byte176byte+1ce66 PDF

    M395T1G60QJ4-CE68

    Abstract: CE68
    Contextual Info: SERIAL PRESENCE DETECT M395T1G60QJ4-CE68 8GB FBDIMM : M395T1G60QJ4-CE68 Byte # Function Supported Hex Value CE68 CE68 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage


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    m395t1g60qj4-ce68116byte256byte176byte+1ce68 PDF

    M395T2953CZ4-CD50

    Abstract: CD50 M395T2953CZ4
    Contextual Info: SERIAL PRESENCE DETECT M395T2953CZ4-CD50/CE60 1GB FBDIMM :M395T2953CZ4-CD50/CE60 Contents : Byte # Function described Function Supported CD50 CE60 Hex Value CD50 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD Byte Use : 176Byte CE60 Number of Serial PD Bytes Written / SPD Device Size / CRC


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    m395t2953cz4-cd50/ce60116byte256byte176byte+3m395t2953cz4-cd50cd50m395t2953cz4 PDF

    M395T1G60QJ4-CF78

    Abstract: 25H40
    Contextual Info: SERIAL PRESENCE DETECT M395T1G60QJ4-CF78 8GB FBDIMM : M395T1G60QJ4-CF78 Byte # Function Supported Hex Value CF78 CF78 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage


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    m395t1g60qj4-cf78116byte256byte176byte+125h40 PDF

    Contextual Info: 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 TS128MFB72V6J-T Description MBIST and IBIST Test functions The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Hot add-on and Hot Remove Capability Fully Buffered DIMM. The TS128MFB72V6J-T consists of Transparent mode for DRAM test support


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    240pin64mx8ts128mfb72v6j-t72bits+4ddr2-66718pcs64mx8its240-pin PDF

    Contextual Info: TS128MFB72V6J-T 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 Description Hot add-on and Hot Remove Capability The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Transparent mode for DRAM test support Fully Buffered DIMM. The TS128MFB72V6J-T consists of


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    ts128mfb72v6j-t240pin64mx872bits+4ddr2-66718pcs64mx8its240-pin PDF

    M471B5673FH0-CF8

    Abstract: M471B5673 ddr3 spd samsung M471B5673FH0-CF8/CH9/CK0
    Contextual Info: SERIAL PRESENCE DETECT M471B5673FH0-CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # : K4B1G0846F-HCF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    m471b5673fh0-cf8/ch9/ck0k4b1g0846f-hcf8/ch9/ck08k/64msm471b5673fh0-cf8+2m471b5673ddr3 spd samsung PDF

    Contextual Info: 240PIN DDR2 667 Fully Buffered DIMM 2GB With 128Mx4 CL5 TS256MFB72V6K-T Description Programmable CAS Latency: 3, 4, 5 The TS256MFB72V6K-T is a 256M x 72bits DDR2-667 Automatic DDR2 DRAM bus and channel calibration Fully Buffered DIMM. The TS256MFB72V6K-T consists


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    240pin128mx4ts256mfb72v6k-t72bits+4ddr2-66736pcs128mx4bits240-pin PDF

    Contextual Info: 240PIN DDR2 667 Fully Buffered DIMM 512MB With 64Mx8 CL5 TS64MFB72V6J-T Description Hot add-on and Hot Remove Capability The TS64MFB72V6J-T is a 64M x 72bits DDR2-667 Fully Transparent mode for DRAM test support Buffered DIMM. The TS64MFB72V6J-T consists of 9 pcs


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    240pin512mb64mx8ts64mfb72v6j-t+472bitsddr2-66764mx8its240-pin PDF

    MB88F332

    Abstract: 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"
    Contextual Info: MB88F332 LSI Product Specifications 3th December, 2008 Edition 0.981 FUJITSU PROPRIETARY AND CONFIDENTIAL MB88F332 LSI Product Specifications Preface Objectives and Intended Reader Thank you very much for your continued special support for Fujitsu semiconductor products.


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    mb88f332180nm cmos process parametersapix ashelllsi fujitsu+6inap125lcd ttl tconargb8888tft lcd n96egs02tft lcd panel 1.8 PDF

    samsung dimm DDR3 SPD

    Abstract: samsung DDR3 SDRAM 2GB M378B5273 M378B5273BH1-CF7 samsung K4B2G0846B DDR3 SPD ddr3 datasheet samsung ddr3 samsung dimm DDR3 COLUMN10
    Contextual Info: SERIAL PRESENCE DETECT M378B5273BH1-CF7/CF8/CH9/CK0 Organization : 512M x 64 Composition : 256M x 8 * 16ea Used component part # : K4B2G0846B-HCF7/CF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    m378b5273bh1-cf7/cf8/ch9/ck0k4b2g0846b-hcf7/cf8/ch9/ck08k/64ms116byte+12256byte176bytesamsung dimm ddr3 spdsamsung ddr3 sdram 2gbm378b5273m378b5273bh1-cf7samsung k4b2g0846bddr3 spdddr3 datasheetsamsung ddr3samsung dimm ddr3column10 PDF

    samsung dimm DDR3 SPD

    Abstract: CF701 inphi SSTE32882 HCH9 samsung DDR3 SDRAM 2GB GS-04 M393B1K70 RC10 RC11
    Contextual Info: SERIAL PRESENCE DETECT M393B1K70BH1-CF701/CF801/CH901/CK001 Organization : 1G x 72 Composition : 512M x 4 * 36ea Used component part # : K4B2G0446B-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    m393b1k70bh1-cf701/cf801/ch901/ck001k4b2g0446b-hcf7/hcf8/hch9/hck08k/64msgs-04+11cf701cf801ch901samsung dimm ddr3 spdinphisste32882hch9samsung ddr3 sdram 2gbm393b1k70rc10rc11 PDF

    TL16PIR552

    Contextual Info: DATA TRANSMISSION T L1 6 P IR 5 5 2 D ual U A R T w it h IrD A a n d IEEE 1284 Dual 550 UART TL16PIR552PH > - $ 7 .1 8 in q u a n titie s o f 1 0DO Available in fiO-pin QFP he TL16PIR552 dual-channel the twro serial ports. The device also UART gives designers control of a


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    tl16pir552phtl16pir552116-byters-232+51200-bps115-kbpslro64-bytetir2000tl16c550c PDF

    CF-800

    Abstract: samsung DDR3 SDRAM 2GB CF700 HCF8 M471B5273CH0 CF800 CF-700 CH900 Samsung ddr3 1600 SDRAM k4b2g0846c
    Contextual Info: SERIAL PRESENCE DETECT M471B5273CH0-CF700/CF800/CH900/CK000 Organization : 512M x 64 Composition : 256M x 8 * 16ea Used component part # : K4B2G0846C-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    m471b5273ch0-cf700/cf800/ch900/ck000k4b2g0846c-hcf7/hcf8/hch9/hck08k/64mscf700+10cf800ch900ck000cf-800samsung ddr3 sdram 2gbhcf8m471b5273ch0cf-700samsung ddr3 1600 sdramk4b2g0846c PDF

    M471B2873EH1-CF7

    Abstract: Samsung ddr3 1600 SDRAM samsung ddr3 ddr3 spd samsung
    Contextual Info: SERIAL PRESENCE DETECT M471B2873EH1-CF7/CF8/CH9/CK0 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 1 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    m471b2873eh1-cf7/cf8/ch9/ck0k4b1g0846e-hcf7/cf8/ch9/ck08k/64ms116byte+6256byte176bytem471b2873eh1-cf7samsung ddr3 1600 sdramsamsung ddr3ddr3 spd samsung PDF

    SSTE32882

    Abstract: samsung dimm DDR3 SPD HCH9 CF804 LVDDR3 K4B1G0846E samsung ddr3 RC10 RC11 RC12
    Contextual Info: SERIAL PRESENCE DETECT M393B5673EH1-CF704/CF804/CH904/CK004 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    m393b5673eh1-cf704/cf804/ch904/ck004k4b1g0846e-hcf7/hcf8/hch9/hck08k/64mscf704+10sste32882samsung dimm ddr3 spdhch9cf804lvddr3k4b1g0846esamsung ddr3rc10rc11rc12 PDF

    inphi

    Abstract: samsung dimm DDR3 SPD DDR3 DIMM SPD JEDEC samsung DDR3 SDRAM 2GB ddr3 spd samsung samsung ddr3 RC10 RC11 RC12 K4B2G0446B-HCF7
    Contextual Info: SERIAL PRESENCE DETECT M393B5270BH1-CF701/CF801/CH901/CK001 Organization : 512M x 72 Composition : 512M x 4 * 18ea Used component part # : K4B2G0446B-HCF7/HCF8/HCH9/HCK0 # of rows in module : 1 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    m393b5270bh1-cf701/cf801/ch901/ck001k4b2g0446b-hcf7/hcf8/hch9/hck08k/64msgs-04+13cf701cf801ch901inphisamsung dimm ddr3 spdddr3 dimm spd jedecsamsung ddr3 sdram 2gbddr3 spd samsungsamsung ddr3rc10rc11rc12k4b2g0446b-hcf7 PDF

    samsung dimm DDR3 SPD

    Abstract: SSTE32882 inphi samsung ddr3 RC10 RC11 RC12 HCH9 ddr3 spd samsung inphi* rcd
    Contextual Info: SERIAL PRESENCE DETECT M393B5673EH1-CF701/CF801/CH901/CK001 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component


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    m393b5673eh1-cf701/cf801/ch901/ck001k4b1g0846e-hcf7/hcf8/hch9/hck08k/64msgs04-b2+12cf701vdd36samsung dimm ddr3 spdsste32882inphisamsung ddr3rc10rc11rc12hch9ddr3 spd samsunginphi* rcd PDF

    Contextual Info: 240PIN DDR2 533 Fully Buffered DIMM 2GB With 128Mx4 CL4 TS256MFB72V5K-T Description Programmable CAS Latency: 3, 4, 5 The TS256MFB72V5K-T is a 256M x 72bits DDR2-533 Automatic DDR2 DRAM bus and channel calibration Fully Buffered DIMM. The TS256MFB72V5K-T consists


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    240pin128mx4ts256mfb72v5k-t72bits+4ddr2-53336pcs128mx4bits240-pin PDF

    Contextual Info: TS64MFB72V5J-T 240PIN DDR2 533 Fully Buffered DIMM 512MB With 64Mx8 CL4 Description Hot add-on and Hot Remove Capability The TS64MFB72V5J-T is a 64M x 72bits DDR2-533 Fully Transparent mode for DRAM test support Buffered DIMM. The TS64MFB72V5J-T consists of 9 pcs


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    ts64mfb72v5j-t240pin512mb64mx8+472bitsddr2-53364mx8its240-pin PDF

    Contextual Info: 240PIN DDR2 533 Fully Buffered DIMM 1GB With 64Mx8 CL4 TS128MFB72V5J-T Description MBIST and IBIST Test functions The TS128MFB72V5J-T is a 128M x 72bits DDR2-533 Hot add-on and Hot Remove Capability Fully Buffered DIMM. The TS128MFB72V5J-T consists of Transparent mode for DRAM test support


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    240pin64mx8ts128mfb72v5j-t72bits+4ddr2-53318pcs64mx8its240-pin PDF

    180NM cmos process parameters

    Abstract: MB88F332 APIX2 gi 9448 1280x480 apix ashell PTMR05 TFT LCD n96 EGS02 rgb888 to rgb666
    Contextual Info: MB88F332 LSI Product Specifications MB88F332 LSI Product Specifications 12th August, 2009 Edition 1.1 FUJITSU MICROELECTRONICS PROPRIETARY AND CONFIDENTIAL i MB88F332 LSI Product Specifications Preface Objectives and Intended Reader Thank you very much for your continued special support for Fujitsu semiconductor products.


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    mb88f332180nm cmos process parametersapix2gi 9448+61280x480apix ashellptmr05tft lcd n96egs02rgb888 to rgb666 PDF