116BYTE Search Results
116BYTE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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M395T6553GZ4-CE66Contextual Info: SERIAL PRESENCE DETECT M395T6553GZ4-E66 512MB FBDIMM : M395T6553GZ4-CE66 Byte # Function Supported Hex Value E66 E66 CRC coverage 0~116Byte, SPD Byte Total :256Byte, SPD B yte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage |
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m395t6553gz4-e66512mbm395t6553gz4-ce66116byte+2 | |
M395T2953GZ4-CE66
Abstract: CE66 TRP15ns
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m395t2953gz4-ce66116byte256byte176byte+2 | |
M395T5750GZ4-CE66
Abstract: CE66
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m395t5750gz4-ce66116byte256byte176byte+1 | |
M395T1G60QJ4-CE68
Abstract: CE68
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m395t1g60qj4-ce68116byte256byte176byte+1 | |
M395T2953CZ4-CD50
Abstract: CD50 M395T2953CZ4
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m395t2953cz4-cd50/ce60116byte256byte176byte+3 | |
M395T1G60QJ4-CF78
Abstract: 25H40
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m395t1g60qj4-cf78116byte256byte176byte+1 | |
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Contextual Info: 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 TS128MFB72V6J-T Description MBIST and IBIST Test functions The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Hot add-on and Hot Remove Capability Fully Buffered DIMM. The TS128MFB72V6J-T consists of Transparent mode for DRAM test support |
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240pin64mx8ts128mfb72v6j-t72bits+4 | |
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Contextual Info: TS128MFB72V6J-T 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 Description Hot add-on and Hot Remove Capability The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Transparent mode for DRAM test support Fully Buffered DIMM. The TS128MFB72V6J-T consists of |
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ts128mfb72v6j-t240pin64mx872bits+4 | |
M471B5673FH0-CF8
Abstract: M471B5673 ddr3 spd samsung M471B5673FH0-CF8/CH9/CK0
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m471b5673fh0-cf8/ch9/ck0k4b1g0846f-hcf8/ch9/ck08k/64msm471b5673fh0-cf8+2 | |
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Contextual Info: 240PIN DDR2 667 Fully Buffered DIMM 2GB With 128Mx4 CL5 TS256MFB72V6K-T Description Programmable CAS Latency: 3, 4, 5 The TS256MFB72V6K-T is a 256M x 72bits DDR2-667 Automatic DDR2 DRAM bus and channel calibration Fully Buffered DIMM. The TS256MFB72V6K-T consists |
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240pin128mx4ts256mfb72v6k-t72bits+4 | |
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Contextual Info: 240PIN DDR2 667 Fully Buffered DIMM 512MB With 64Mx8 CL5 TS64MFB72V6J-T Description Hot add-on and Hot Remove Capability The TS64MFB72V6J-T is a 64M x 72bits DDR2-667 Fully Transparent mode for DRAM test support Buffered DIMM. The TS64MFB72V6J-T consists of 9 pcs |
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240pin512mb64mx8ts64mfb72v6j-t+4 | |
MB88F332
Abstract: 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"
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mb88f332180nm cmos process parametersapix ashelllsi fujitsu+6 | |
samsung dimm DDR3 SPD
Abstract: samsung DDR3 SDRAM 2GB M378B5273 M378B5273BH1-CF7 samsung K4B2G0846B DDR3 SPD ddr3 datasheet samsung ddr3 samsung dimm DDR3 COLUMN10
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m378b5273bh1-cf7/cf8/ch9/ck0k4b2g0846b-hcf7/cf8/ch9/ck08k/64ms116byte+12 | |
samsung dimm DDR3 SPD
Abstract: CF701 inphi SSTE32882 HCH9 samsung DDR3 SDRAM 2GB GS-04 M393B1K70 RC10 RC11
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m393b1k70bh1-cf701/cf801/ch901/ck001k4b2g0446b-hcf7/hcf8/hch9/hck08k/64msgs-04+11 | |
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TL16PIR552Contextual Info: DATA TRANSMISSION T L1 6 P IR 5 5 2 D ual U A R T w it h IrD A a n d IEEE 1284 Dual 550 UART TL16PIR552PH > - $ 7 .1 8 in q u a n titie s o f 1 0DO Available in fiO-pin QFP he TL16PIR552 dual-channel the twro serial ports. The device also UART gives designers control of a |
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tl16pir552phtl16pir552116-byters-232+5 | |
CF-800
Abstract: samsung DDR3 SDRAM 2GB CF700 HCF8 M471B5273CH0 CF800 CF-700 CH900 Samsung ddr3 1600 SDRAM k4b2g0846c
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m471b5273ch0-cf700/cf800/ch900/ck000k4b2g0846c-hcf7/hcf8/hch9/hck08k/64mscf700+10 | |
M471B2873EH1-CF7
Abstract: Samsung ddr3 1600 SDRAM samsung ddr3 ddr3 spd samsung
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m471b2873eh1-cf7/cf8/ch9/ck0k4b1g0846e-hcf7/cf8/ch9/ck08k/64ms116byte+6 | |
SSTE32882
Abstract: samsung dimm DDR3 SPD HCH9 CF804 LVDDR3 K4B1G0846E samsung ddr3 RC10 RC11 RC12
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m393b5673eh1-cf704/cf804/ch904/ck004k4b1g0846e-hcf7/hcf8/hch9/hck08k/64mscf704+10 | |
inphi
Abstract: samsung dimm DDR3 SPD DDR3 DIMM SPD JEDEC samsung DDR3 SDRAM 2GB ddr3 spd samsung samsung ddr3 RC10 RC11 RC12 K4B2G0446B-HCF7
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m393b5270bh1-cf701/cf801/ch901/ck001k4b2g0446b-hcf7/hcf8/hch9/hck08k/64msgs-04+13 | |
samsung dimm DDR3 SPD
Abstract: SSTE32882 inphi samsung ddr3 RC10 RC11 RC12 HCH9 ddr3 spd samsung inphi* rcd
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m393b5673eh1-cf701/cf801/ch901/ck001k4b1g0846e-hcf7/hcf8/hch9/hck08k/64msgs04-b2+12 | |
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Contextual Info: 240PIN DDR2 533 Fully Buffered DIMM 2GB With 128Mx4 CL4 TS256MFB72V5K-T Description Programmable CAS Latency: 3, 4, 5 The TS256MFB72V5K-T is a 256M x 72bits DDR2-533 Automatic DDR2 DRAM bus and channel calibration Fully Buffered DIMM. The TS256MFB72V5K-T consists |
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240pin128mx4ts256mfb72v5k-t72bits+4 | |
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Contextual Info: TS64MFB72V5J-T 240PIN DDR2 533 Fully Buffered DIMM 512MB With 64Mx8 CL4 Description Hot add-on and Hot Remove Capability The TS64MFB72V5J-T is a 64M x 72bits DDR2-533 Fully Transparent mode for DRAM test support Buffered DIMM. The TS64MFB72V5J-T consists of 9 pcs |
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ts64mfb72v5j-t240pin512mb64mx8+4 | |
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Contextual Info: 240PIN DDR2 533 Fully Buffered DIMM 1GB With 64Mx8 CL4 TS128MFB72V5J-T Description MBIST and IBIST Test functions The TS128MFB72V5J-T is a 128M x 72bits DDR2-533 Hot add-on and Hot Remove Capability Fully Buffered DIMM. The TS128MFB72V5J-T consists of Transparent mode for DRAM test support |
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240pin64mx8ts128mfb72v5j-t72bits+4 | |
180NM cmos process parameters
Abstract: MB88F332 APIX2 gi 9448 1280x480 apix ashell PTMR05 TFT LCD n96 EGS02 rgb888 to rgb666
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mb88f332180nm cmos process parametersapix2gi 9448+6 | |