113 SOT23 Search Results

SMD IC sot23-5 5K

Contextual Info: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE

copper bonding wire

Contextual Info: PCN #: 113 Notification Date: 25 May 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: All discrete semiconductor devices manufactured in the SOD-123, SOT-23, and SOT-323 packages. Extent of Change:

TSH110

Abstract: TSH111 TSH112 TSH113 TSH114 TSSOP14 TSH110-TSH111-TSH112-TSH113-TSH114
Contextual Info: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz PIN CONNECTIONS top view LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE

identification code c3 SOT23-5

Abstract: TSH110 TSH111 TSH112 TSH113 TSH114 TSSOP14
Contextual Info: TSH110-111-112-113-114 WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ ■ ■ ■ LOW NOISE: 3nV/√Hz LOW SUPPLY CURRENT: 3.2mA 47mA OUTPUT CURRENT BANDWIDTH: 100MHz TSH110 : SOT23-5 Output 1 5V to 12V SUPPLY VOLTAGE SLEW-RATE: 450V/µs

apx transistor

Contextual Info: • bbS3T31 00Z353T 113 ■ APX Philips Semiconductors_ N APIER PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor FEATURES Product specification QUICK R EFER EN CE DATA MAX. UNIT “ 30 V BF545A

Contextual Info: 113 Surface M ount Devices Zener Diodes, SOT-23 350mW , Pinout H (cont.) Zener Impedance ^Z (Nom)* @ IZT lR (Max) Temperature Coefficient Zzk (Max) Zr t (Max) *ZK= 0-25mA @VR Type (V) @ <z (mA) ft (mA) (ft) 0vz (Max) (%/°C) (txA) (V) PMBZ5241B PMBZ5242B

Contextual Info: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.

SOT23-6

Abstract: 02 SOT23-6
Contextual Info: SOT23-6 Thermal Resistance and Derating Information SOT23-6 1.1W devices j-a=113°C/W Maximum Mounted on a FR4 p.c.b. of 50mm x 50mm 2"x2" connected using 25mm x 0.5mm copper wire 100 80 60 D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 100µ 1m 10m 100m 1

BB453

Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor
Contextual Info: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V

SKH122

Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
Contextual Info: INDEX Order Code Description Manufacturer 688-113 688-125 688-405 688-137 688-149 688-101 743-471 548-613 548-625 — — — — — — 795-987 670-820 — — — — — 663-335 663-293 795-331 687-625 794-788 794-776 796-413 795-422 795-410 795-483 796-300

el 847

Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12
Contextual Info: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j

ZD 103 ma

Abstract: LT/SG3527A op292g AD8436
Contextual Info: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004

RB111C

Abstract: 2SK195 2.gND 4.NC sot-23-5 m 2SD1628 2SK1470 2SK2054 CD104 CD54 CD73 RN5RY202
Contextual Info: Tr 外付けタイプVFM 昇圧 DC/DC コンバータ NO. JK-113-9803 RN5RY202 • 概要 RN5RY202 はCMOS プロセス技術を用いて開発したVFM（チョッパ）制御型高精度、低消費電流のパワートラ ンジスタ外付けタイプの昇圧 DC/DC コンバータ用制御 IC で、基準電圧源、誤差増幅器、発振回路、VFM コントロー

Bsv80

Abstract: 2N4092 2N4392 Philips J176 PMBF PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR SWITCHING OVERVIEW PRODUCT DATA: PAGES 39-40 leaded N/P TO-18 surface-mount TO-72 TO-92 SOT23 SOT 143 SOT223 N BSV78

TS16949

Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
Contextual Info: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP

F20M

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSU E 3 - OCTOBER 1995_ FEATURES * 400 Volt V CE0 C O M P LEM EN T A R Y TYPE - FM M T558 P A R T M A R K IN G D E T A I L - 458 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAM ETER Collector-Base Voltage

complementary npn-pnp power transistors

Abstract: sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors
Contextual Info: A Product Line of Diodes Incorporated ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 40 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to

Contextual Info: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.

Contextual Info: Tem ic Semiconductors # SOT23 TO 18 2 lead T018 (3 lead) ^ TOS2 T072 TO92 (2 lead) ^ T092(31ead) JFETs - N-Channel JFET Analog Switches Break­ down Voltage Mm i \ i “ VS i f .5 » . ¡ i f * , • fe ’ (Q> Min \b x Min J 105 3 ^ .5 -10 500 -20 J106

DIODES 11W

Contextual Info: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve

DUAL NPN SOT23-6

Abstract: NPN SOT23-6 connection diagram TC* SOT23-6 e-line 113
Contextual Info: Packages & Thermal Data Packages SOT23 Connection diagram Taping options: Part no. suffixed TA = 3k devices per 7’‘ reel Part no. suffixed TC = 10k devices per 13’‘ reel Top view Connection diagrams SOT23-6 C B E N/C Anode Cathode Single Taping options:

bss69r

Contextual Info: BSS69 BSS70 SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS69 - L2 BSS70 - L3 BSS69R - L6 BSS70R - L7 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BO L VALUE UNIT V V v CBO -4 0 C o lle cto r-E m itte r V oltag e V CEO -4 0 E m itter-B ase V o lta g e

Contextual Info: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.

ZXTC2062E6

Abstract: TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp
Contextual Info: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.