111MHZ Search Results
111MHZ Price and Stock
Bourns Inc SRR4028-2R2YPower Inductors - SMD 2.2uH 30% SMD 4028 |
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SRR4028-2R2Y | Reel | 1,000 |
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TAIYO YUDEN LLXNE3030MKT1R0NNPower Inductors - SMD PLEASE SEE SUGGESTED ALTERNATE LSXNE3030MKT1R0NN |
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LLXNE3030MKT1R0NN | Reel | 2,000 |
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Others HC-49-U-10.111MHZINSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HC-49-U-10.111MHZ | 1,000 |
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111MHZ Datasheets Context Search
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Contextual Info: ADVANCED INFORMATION P L D 2 2 V 1 0 -7 High Performance 10-Macrocell CMOS PLD • High Speed Upgrade to BiCMOS/Bipolar 22V 10 and CMOS Equivalents ■ Global Asynchronous Clear and Synchronous Preset P-terms. ■ tpp 7.5ns, 111MHz with Feedback ■ 1-Micron CHMOS EPROM Technology |
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10-macrocell111mhz15mhz | |
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Contextual Info: DATA SHEET 256M bits SDRAM Bare Chip ECS2532EECN-A 8M words x 32 bits Features • Density: 256M bits • Organization 2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.) |
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ecs2532eecn-a111mhzcycles/64msm01e0107+1 | |
LBS11101Contextual Info: 111MHz SAW Filter 3MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number:LBS11101 www.sipatsaw.com Specifications Parameter Unit Minimum Typical Maximum Center Frequency MHz 111.2 111.3 111.4 Insertion Loss |
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111mhzlbs11101 | |
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Contextual Info: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1232ECCN-A 4M words x 32 bits Features • Density: 128M bits • Organization 1M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.) |
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ecs1232eccn-a111mhzcycles/64msm01e0107+1 | |
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Contextual Info: K4M28163PF - R B G/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the |
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k4m28163pf16bit54csp | |
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Contextual Info: K4M64163PH - R B G/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M64163PH is 67,108,864 bits synchronous high data • LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, |
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k4m64163ph16bit54csp | |
K4M56163PG
Abstract: 54-FBGA
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k4m56163pg16bit54fbga54-fbga | |
K4M283233HContextual Info: K4M283233H - F H N/G/L/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, |
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k4m283233h32bit90fbga | |
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Contextual Info: mult_vgen_v1.0.fm Page 1 Wednesday, October 13, 1999 9:03 AM Variable Parallel Virtex Multiplier V1.0.2 October 15, 1999 Product Specification R Xilinx Inc. 2100 Logic Drive San Jose, CA 95124 Phone: +1 408-559-7778 Fax: +1 408-559-7114 E-mail: coregen@xilinx.com |
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LF9502
Abstract: LMU217 ACCM 5 pin digital video mixer - tbc power supply 5 Volt LF3347 9027 scl110 LF3310 LF3311
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2002shortlf3310lf3311lf9502+7 | |
PLSI 1016-60LJ
Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
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1016e1032e20ters48-pin+11 | |
24-Pin Plastic DIP
Abstract: e2cmos technology pioneer corporation
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111mhz100-pin160-pin176-pin+9 | |
22V10 PAL CMOS device
Abstract: Pal programming 22v10 29MA16 Vantis GAL16V8 16v8d 22v10 pal 20LV8D 16v8 PLD 74xx244 20V8
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gal16vp8gal20vp8gal16v8z/zdgal20v8z/zd+15 | |
M12S16161A
Abstract: M12S16161A-7BG M12S16161A-7TG
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m12s16161a16bitm12s16161a-7bgm12s16161a-7tg | |
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PPC405EP bsdl
Abstract: PPC405EP transistor w04 ppc405ep-3lb266c L16 eeprom smt w04 w04 75 405EP ns16750 PPC405EP-3GB133CZ
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ppc405ep405ep32-bit333mhz+11 | |
EDS2532EEBH-9AContextual Info: PRELIMINARY DATA SHEET 256M bits SDRAM EDS2532EEBH-9A 8M words x 32 bits Description Pin Configurations The EDS2532EEBH is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the |
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eds2532eebh-9aeds2532eebh90-ball111mhz+2 | |
k4m641633
Abstract: K4M641633K 54balls
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k4m641633k16bit54fbgak4m641633+1 | |
adv7499
Abstract: adv7402a LT 525I ADV7402 ADV7403 l e d colour tv circuit diagram P2401 av btr hex map 2N101 720P
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adv7403adv7499adv7402alt 525i+6 | |
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Contextual Info: N128R3225GAK2 1M x 32Bit x 4Banks Double Data Rate Synchronous DRAM DISCRIPTION The N128R3225GAK2 is 134,217,728 bits of double data rate synchronous dynamic RAM organized as 4 x 1,048,576 bits by 32 I/Os. Synchronous features with Data Strobe allow extremely high performance up to 400M bps/pin. I/O transactions are possible on both |
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n128r3225gak232bit | |
pioneer corporationContextual Info: Introduction to ispGDXV, ispGDX and ispGDS Families ® ® November 2003 Introduction Lattice Semiconductor Corporation, the pioneer of non-volatile E2CMOS® in-system programmable ISP logic, has now expanded the application of ISP PLDs to include programmable switching, interconnect and jumper functions with the ispGDX and the ispGDS devices. In-system programmability allows for real-time programming, less |
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16-bit100-pin160-pin176-pin+7 | |
LF3320
Abstract: LF3321
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lf332116-bit12-bit24-bit+6 | |
LF3311
Abstract: 743H LF3310 LF3320 RV15 VCF5 VCF9
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lf331112-bitdin11din10+9 | |
oneDRAM
Abstract: 133MHz 640M 111MHz KJXX
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ag010008k/64msx16/x16x32/x16+8 | |
xilinx TURBO decoder
Abstract: DS275 Turbo Code LogiCORE IP License Terms XC2V500 XC2VP20 Turbo decoder Xilinx RSC11
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ds275cdma2000/3gpp2xilinx turbo decoderturbo code logicore ip license terms+4 | |