10PES Search Results

7443003

Contextual Info: CD-R O PERATIN G PLAY TEM P. —25~+70°C O PERATIN G (REC O RD ) TEM P. -5~+55°C '. . IF É ^ r u p ié ' 1 f è ìl~ 2 4 f t Ä Ì T ' X - A - 7 ' f K U > v I B i l ì S J t f t j f c "Super wide range" design assure of writing at all speed (1x to 24x)

M 1661 S

Contextual Info: FLK102XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 30.0dBm Typ. High Gain: G-j^B = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability I Drain DESCRIPTION Drain É The FLK102XV chip is a power GaAs FET that is designed for

Nippon capacitors

Contextual Info: HB56A264EJ-5/6/7 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-740A Z Rev. 1.0 Feb. 7, 1997 Description The HB56A264EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

FLK022

Abstract: FLK022XV GaAs FET HEMT Chips FLK022XP
Contextual Info: FLK022XP, FLK022XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • • • • High Output Power: P-|dB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: riadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK022XP, and FLK022XV chip is a power GaAs FET that is

Contextual Info: F LR026XP ; F L R 0 2 6 X V GaAs F E T and M IM T Chips ELECTRICAL CHARACTERISTICCS Ambient Temperature Ta=25°C Item Symbol Saturated Drain Current >DSS Test Conditions Min. - 50 - mS -1.0 -2.0 -3.5 V -4 - - V 22 23 - dBm 6.5 7.5 - dB - 28 - % 22 23 - dBm

Contextual Info: FHR20X GaAs F E T an d H E M T Chins ELECTRICAL CHARACTERISTI CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current Test Conditions Min. Limit Typ. Max. Unit IDSS Vos = 2V, Vqs = OV 5 15 30 mA Transconductance 9m V d s = 2V, Id s = 5mA 20

Contextual Info: First Edition LCD Module Technical Specification Sep 27, 2007 Final R evision * F-55157G N B-LW-AIN OPTREX CORPORATION Approved : Toshiyuki Okamoto M OBILE,CO N SUM iRUm U STRY DESIGN DIV. Checked i n : Saioshi San o MOBILE,CONSUMER.&.INDUSTR.Y DESIGN DIV .

cs 2648

Abstract: FLR106XV
Contextual Info: FLR 106X V fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • High Output Power: P-|dB = 29.0dBm Typ. • High Gain: G ^ b = 7.0dB(Typ.) • High PAE: riadd = 28%(Typ.) • Proven Reliability DESCRIPTION The FLR106XV chip is a power GaAs FET that is designed

FLC081XP

Contextual Info: FLC081XP Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iacjç| = 31.5%(Typ.) Proven Reliability DESCRIPTION The FLC081XP chip is a power GaAs FET that is designed for general

uCOM-4

Abstract: 4218160 UPD556B uCOM-4 instruction set PD42S18160 ucom44 b427525
Contextual Info: fiPD556B \ / SEC NEC Electronics US.A. Inc. Microcomputer Division fiCOM-4 4-BIT SINGLE CHIP ROM-LESS EVALUATION CHIP DESCRIPTION T h e ;uPD556B is the ROM-less evaluation chip fo r the ;uCOM-4 4 -b it single chip m icro­ com puter fa m ily . The /liP D 5 56B is used in conjunction w ith an external 2 0 4 8 x 8-bit

Contextual Info: FLR056XV Füjrrsu GaAs FET and HEMT Chips FEATURES • High Output Power: P-|<jB = 26.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.) • High PAE: r)adc| = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR056XV chip is a power GaAs FET that is designed for

Contextual Info: DRAW ING No.: M 3 0 - 3 0 1 IF IN D O U BT - AS K XX 46R NOT TO S C A LE TH IR D A N G LE PR O JEC TIO N -A+0.15.25+0.05- SPECIFICATIONS: M A TE R IA LMOULDING: NYLON 9T, U L 9 4 V - 0 CONTACT: PHOSPHOR BRONZE, 0.3MM FLAT PH FIN ISH :TIN PLATED ELECTRICAL:CURRENT RATING: 1A A C /D C MAX.

Contextual Info: HL6312G Red Laser Diode for Industry and Measurement Application Error! Not a valid filename. ADE-208-190 F Z 7th. Edition May 1997 Description • The HL6312G is a 0.63|im band AlGalnp laser diode with multi quantumwell (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source in barcode readers, laser

Contextual Info: First Edition LCD Module Technical Specification Sep 27, 2007 Final R evision * F-55157G N F-LW-AJ N OPTREX CORPORATION Approved : T o s h i y u k i Okamoto M O B I L E , C O N S U M E R M N D U S T R Y D ESIG N DIV. Checked : Satoshi S an o M O B I L E ,C O N S U M E R & .IN D U S T R Y D ESIG N D I V .

FLk052

Contextual Info: FLK052XV f u j Ït s u GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-|dB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability DESCRIPTION The FLK052XV chip is a power GaAs FET that is designed for

FLR056XV

Abstract: GaAs FET HEMT Chips
Contextual Info: FLR056XV fujÏtsu G a A s F E T a n d H E M T Chips FEATURES • High Output Power: P-|dB = 26.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.) • High PAE: Tiadd = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR056XV chip is a power GaAs FET that is designed for

FLR026XV

Contextual Info: FLR026XP, FLR026XV n eP ,. G a A s F E T a n d H E M T Chips r U J I 1b U FEATURES • High Output Power: P-|d B = 23.0dBm Typ. • High Gain: G 1dB = 7.5dB(Typ.)(FLR026XP) G 1dB = 8.5dB(Typ.)(FLR026XV) • High PAE: r\addl = 28%(Typ.)(FLR026XP) *ladd = 29%(Typ.)(FLR026XV)

fujitsu gaas fet

Abstract: FLC151xp FLC151 FUJITSU MICROWAVE
Contextual Info: FLC151XP fujÏtsu GaAs FET and H E M T Chips FEATURES • • • • High Output Power: P-i ^ b = 31.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Reliability - ^ — & Drain- Drain

FLK202XV

Contextual Info: FLK202XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G -j^B = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability DESCRIPTION The FLK202XV chip is a pow er GaAs FET that is designed

FLK102

Contextual Info: F LK102 XV GciAs F E T a nd H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current Test Conditions IDSS 400 600 mA - 200 - mS -1.0 -2.0 -3.5 V -5 - - V 29 30 - dBm 5.5 6.5 - dB - 31 - % V q s = 5V>!dS = 250mA

Contextual Info: Module no:1704033 LabelId:1704033 Operator:Phoenix 16:14:09, Donnerstag, 28. Juni 2001 KDS 10-PE Pitch 10 IEC 2 [mm ] rigid solid Connection data 0.5-16 I U [A] [V] flexible stranded AWG 0.5-10 20-6 Solder connection 76 2 50 ) CAF Type Order No. Pcs. Pkt.

Contextual Info: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

FLK012

Abstract: FLK012XP
Contextual Info: FLK012XP c?„. G a A s F E T a n d H E M T Chips r U J IlM J FEATURES • • • • High Output Power: P-|dB = 20.5dBm Typ. High Gain: G-j^B = 8.0dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability DESCRIPTION The FLK012XP chip is a power GaAs FET that is designed for

Contextual Info: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.