10OPH Search Results

k 3525 MOSFET

Abstract: IRFD1ZO irfd1z3
Contextual Info: HE 0 I MâSS4SH 0000300 b | Data Sheet No. PD-9.380G T-35-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEXFET TRANSISTORS IRFD1 ZO IM-CHANNEL HEXDIP IRFD1Z3 1-WÄTT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PAGKAGE 100 Volt, 2.4 Ohm, 1-Watt HEXDIP

Contextual Info: FU JI 2SK2071-01L,S N-channel MOS-FET a it e is ir it ìu e FAP-IIA Series 600V > Features - 6 ,5 ß 2A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof

IRF423

Abstract: ir*420 SM 3117 circuit diagram IRF420 IRF421 IRF422
Contextual Info: Standard Power MOSFETs IRF420, IRF421, IRF422, IRF423 File N u m b e r 1571 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 2.0A and 2.5A, 450V-500V rDs on = 3.0 O and 4.0 fi Features:

Contextual Info: FU JI eiusiÈuitìUtì 2SK2251-01 N-channel MOS-FET FAP-IIA Series 250V > Features 2Q 2A 20W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof

mosfet equivalent

Contextual Info: FU JI eu.eiEirutìUK 2SK2072-01L,S FAP-IIA Series 6A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof T-PACK L T-PACK S lOi 04 JJ 5.08 Switching Regulators

Contextual Info: 2SK2760-01 FU JI SILSKLrtJiaJG FAP-IIS Series N-channel MOS-FET 600V 9A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 > Applications - 0.6 Switching Regulators

F730R

Contextual Info: • tJ303271 [1054053 ÛT2 g HARRIS ■ HAS IR F730/731/732/733 IR F730R /731R /732R /733R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.SA and S.5A, 350V - 400V TOP VIEW • rp s (o n = 1 -0 0 and 1 .5 ÎÏ

Contextual Info: 4302571 00530^3 AMI • S] HARRIS HAS IRF15 0 /1 5 1 /1 5 2 /1 53 IRF15 OR/151R/152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2Q 4A E • 33A and 40A, 60V - 100V • r0S on = 0 .0 5 5 fl and 0 .0 8 il y SOURCE

MOSFET 4465

Abstract: 4465 mosfet
Contextual Info: HARRIS A ugust IRFF330/331/332/333 IRFF330R/331R /332R /333R N -Channel Power MOSFETs Avalanche Energy Rated* 1991 Package Features TO-2Q5AF • 3.0A and 3.5A, 350V - 400V • rDS on = 1 o n and 1-s n • Single Pulse Avalanche Energy Rated* GATE SOURCE • SOA is Power-Disslpatlon Limited

Contextual Info: H A R R I S IR F 1 3 0 /1 3 1 /1 3 2 /1 3 3 IR F 1 3 0 R /1 3 1 R /1 3 2 R /1 3 3 R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-204AA • 12A and 14A, 80V - 100V • rDS{on = 0 .1 6 0 and 0.23Î2 DRAIN FLANGE) SOURCE

SD1018-6

Abstract: transistor npn d 2058 TT142N14KOF21JN M113 SD1018-06 arco 403
Contextual Info: H t jw I V U C r O S r-» e m P ro g re s s P o w e re d b y T ec h no log y S i 140 C o m m erc e Drive ••■v/i l u om 111 eryville v_# I y v 111Vf,■ « r \ 18936-1013 lujt/u iw ■ M o nItg PA Tel: 215 631-9 840 Ä Ä S D 1 0 1 8 "6 RF & MICROWAVE TRANSISTORS

circuits of IRF150

Abstract: IRF150-152
Contextual Info: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*

ld18a

Abstract: dm701 IAR18 2SK2755-01 DIODE m1
Contextual Info: F U JI 2SK2755-01 S T U M s i/Ü íá J K FAP-IIS Series N-channel MOS-FET 450V 0,45Q 18A 125W > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated

Contextual Info: APT30GT60BR ADVANCED P o w er Te c h n o l o g y 600V 58A Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology theThunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, rDS ON = 0.480SJ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for com mercial and m ilitary space

4433 mosfet

Abstract: 4435 mosfet mosfet 4433 AALN IRFF131
Contextual Info: 2 HARRIS IR FF1 30/131/132/133 IR F F 1 3 0 R /1 31 R /1 3 2 R /1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A ugust 1991 Features • Package T0205A F 7 .0 A a n d 8 .0 A , 8 0 V - 1 0 0 V • r D S (o n = 0 . 1 8 f t a n d 0 .2 5 f t • S in g le P u lse A v a la n c h e E n e rg y R a te d *

IRF723R

Contextual Info: IR F720/721/722/723 IRF720R/721R/722R/723R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 2.8A and 3.3A, 350V - 400V • i"DS on = and 2 .5 fl • Single Pulse Avalanche Energy Rated* • SOA Is Power-Dissipation Limited

f640

Abstract: IR 643 643R
Contextual Info: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

j342

Abstract: IRFJ340 Gfg 75a J340 Diode Gfg 75a IRFJ341 IRFJ342 IRFJ343
Contextual Info: HE D I MÛ554SE! QOG'iSflb T | Data Sheet No. PD-9.406A I NT ERNATIONAL R E C T I F I E R T - i f - / / IO R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFJ340 D IRFJ341 ' IRFJ342 N-CHANNEL POWER MOSFETs G IRFJ343 Features: 400 Volt, 0.55 Ohm H EXFET The H E X F E T ® technology is the key to International

250M

Abstract: IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937
Contextual Info: HE 0 I MaSSMSZ 0GQT37Q Ö | Data Shçet No. PD-9.378E INTERNATIONAL R E C T I F I E R ' 7 -3 Ÿ -O Ÿ INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRFF220 IRFF221 IM-CHAIMIMEL POWER MOSFETs TQ-39 PACKAGE IRFFSSS IRFFSS3 Features: 200 Volt, 0.8 Ohm HEXFET

Contextual Info: FU JI 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,1 m 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: FU JI 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Q 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: F U JI 2SK1942-01 N-channel MOS-FET FAP-IIA Series 900V 3A 80W > Outline Drawing > Features - 4Í2 High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

J32 MOSFET

Contextual Info: FU JI 2SK2646-01 N-channel MOS-FET FAP-IIS Series 800V > Features 4Q 4A 80W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Repetitive Avalanche Rated T O -220A B