10JUN08 Search Results

Contextual Info: 8 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 5 6 3 4 2 - LOC DIST AD 47 REVISIONS P LTR F DESCRIPTION DATE 10JUN08 REVISED PER ECO-08-006968 DW N APVD DH GG D D •4. 1 9 [. 1 6 5 ]

Contextual Info: TSOP61. Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Continuous data transmission possible 1 2 3 e3 • TTL and CMOS compatibility

SiHFBC30L

Contextual Info: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating

Si1926DL_RC

Abstract: SI1926DL c 3807 3150 mosfet MOSFET 1052 AN609
Contextual Info: Si1926DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

7426 datasheet

Abstract: 4046 4046 application note 7426 mosfet DATA SHEET 4046 simulation models 4046 AN609
Contextual Info: Si4638DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single DESCRIPTION D I2PAK D2PAK (TO-262) G

irfr9020

Contextual Info: IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.28 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single S • • • • • • • Surface Mountable (Order As IRFR9020/SiHFR9020)

HTS vishay

Abstract: 58 hts geka 932 k1276
Contextual Info: HTS Vishay Sfernice High Ohmic Values up to 100 GΩ , High Voltage Resistors (up to 50 kV) Thick Film Technology FEATURES • • • • RoHS for most values, please consult us Core: High purity ceramic Coating: Epoxy Termination: Standard lead material is solder

SiHFR9022

Abstract: irfu9022 IRFR9022 SiHFR9022-E3 SiHFU9022 SiHFU9022-E3
Contextual Info: IRFR9022, IRFU9022, SiHFR9022, SiHFU9022 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single S • • • • • • • Surface Mountable (Order as IRFR9022/SiHFR9022)

94012C

Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , 2 - LOC RESERVED. REVISIONS D IS T 00 C O R P O R A T IO N . D E S C R IP T IO N C R E VIS E D PER ECO-

AN609

Abstract: Si1071X
Contextual Info: Si1071X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

4066 spice model

Abstract: 7809 A m 1104 N 5192 AN609 Si4431CDY
Contextual Info: Si4431CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

AN609

Abstract: SiE836DF
Contextual Info: SiE836DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

AN609

Contextual Info: Si1051X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

IRF9Z22

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single S P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current

SiHFBC30L

Abstract: IRFBC30 AN-994 IRFBC30L IRFBC30S SiHFBC30L-E3 SiHFBC30S SiHFBC30S-E3
Contextual Info: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating

IRFR9020

Abstract: irfr9020pbf IRFU9020 SiHFR9020 SiHFR9020-E3 SiHFU9020 SiHFU9020-E3 IRFR9020TRL vishay siliconix 99 ipak
Contextual Info: IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.28 Qg (Max.) (nC) 14 Qgs (nC) 6.5 Qgd (nC) 6.5 Configuration Single S • • • • • • • Surface Mountable (Order As IRFR9020/SiHFR9020)

Contextual Info: IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single DESCRIPTION D I2PAK D2PAK (TO-262) G

4565

Abstract: Si1046R AN609
Contextual Info: Si1046R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO 2 3 E L E C T R O N IC S P U B L IC A T IO N R IG H T S -, - LOC RESERVED. C O R P O R A T IO N . R E V IS IO N S D IS T 00 D E S C R IP T IO N D 4.2 0 + 0.05 [.17 + .002]

AN609

Contextual Info: Si5475DDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

RUWIDO

Abstract: vishay Diode type SMD marking SJ tsop Ir sensor ruwido r-step tsop8238 remote control car circuit diagram 20750 omni spectra diode detector tsop34138 TSOP31238 Motor DRIVE MTBF
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Leaded Fixed Wirewound Resistors

Abstract: BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed wirewound resistors vishay vse-db0008-0806 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . RELEASED FOR PUBLIC ATIO N A LL 198 8 2 3 RIG HTS OCT , 1988 . R E V IS IO N S R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. P LTR D E S C R IP TIO N A REVISED ECR —0 8 —01 4 6 3 8 DATE DWN APVD