SIHF9Z22 Search Results

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

IRF9Z22

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single S P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

IRF9Z22,SiHF9Z22_RC

Abstract: SIHF9Z22 760167
Contextual Info: IRF9Z22,SiHF9Z22_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s

IRF9Z20

Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3
Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching

Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching

Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current

IRF9Z20

Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching

IRF9Z20

Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3 mosfet switched pulse circuit
Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current