10JUL07 Search Results

10-32 UNF-28

Abstract: O M 335 LSY HONEYWELL MICRO SWITCH FREEPORT HEAVY DUTY LIMIT SWITCH 200853 tl 4013 LSZ52 LSZ54 LSZ55 1156h
Contextual Info: m RASTER CATALOG >M JA F GJW 124 AUG 94 >W $T AK \Z 19A 'R05 CHECK LSY SERIES CHART 1 PAGE 10JUL07 PSR M O M EN TARY M A IN T A IN E D P R E T R A V E L M A X 15° 15° 65° O V E R T R A V E L (M IN ) 60 o S IN G L E 5 Ö U B L E PO LE PO LE 7° 5° TO TAL TRA V EL

4012 honeywell

Abstract: B1829 B120100 60F10 mfq 60A FI206 O M 335 K851 cl-gd PA 4013
Contextual Info: LSR LSA OPERATING CHARACTER STI CS MOMENTARY PRETRAVEL MAX OVEKTRAVEL(MIN) DIFFERENTIAL TSAVEL(MAX) TO T A L TRAVEL (REF) OPERATING TQRQUE(MAX) FULL TRAVEL TORQUE(MAX) MOMENTARY LOW TORQUE MAINTAINED 15° 15° 05° 60° 60c 20° SINGLE D o u b l e pole POLE

MIC24010

Abstract: MIC2411C-6131 7499010214 MIC24111 MIC24111-0108
Contextual Info: more than you expect Integrated 10/100 Base-T RJ45 Through Hole MIC24 Series LANDatacom Features Typical Electrical Characteristics 1 Inductance 350uH Min. 1500VAC Dielectic Rating 1CT:1CT Turns Ratio Insertion Loss -1.0dB max. -18dB min. -16dB min. Return Loss

B340LB

Contextual Info: New Product B340LB Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop

7483

Abstract: AN609 Si6933DQ
Contextual Info: Si6933DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7483

Abstract: AN609 Si6928DQ
Contextual Info: Si6928DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

D/CRCW

Contextual Info: D./CRCW. Vishay Lead Pb -bearing Thick Film, Rectangular Chip Resistors FEATURES • High volume product suitable for commercial and special applications • Excellent stability (ΔR/R ≤ ± 1 % for 1000 h at 70 °C) • Lead (Pb)-bearing solder contacts on Ni barrier layer

R20 marking

Abstract: 1005 0402 ,metric resistor D/CRCW
Contextual Info: D./CRCW. Vishay Lead Pb -bearing Thick Film, Rectangular Chip Resistors FEATURES • High volume product suitable for commercial and special applications • Excellent stability (ΔR/R ≤ ± 1 % for 1000 h at 70 °C) • Lead (Pb)-bearing solder contacts on Ni barrier layer

LB123T

Abstract: TO126
Contextual Info: LB123T NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126 *High voltage, high speed power switch *Switch regulators *PWM inverter and Motor controls *Solenoid and relay drivers *Deflection circuits a Rating Symbol

spectrol model 552 bushing

Abstract: Spectrol potentiometer 552
Contextual Info: Model 552 Vishay Spectrol 7/8" 22.2 mm Three Turn Wirewound Upper Grade Precision Potentiometer FEATURES • Large range of ohmic values : 5 Ω to 20 kΩ • Bushing mount or servo mount designs are available • Gangable up to 3 sections • Extra taps available upon request

Spectrol 552

Abstract: spectrol model 552 bushing Spectrol potentiometer 552
Contextual Info: Model 552 Vishay Spectrol 7/ 8" 22.2 mm Three Turn Wirewound Upper Grade Precision Potentiometer FEATURES • Large range of ohmic values: 5 Ω to 20 kΩ • Bushing mount or servo mount designs are available • Gangable up to 3 sections • Extra taps available upon request

20583

Contextual Info: VLMK/Y61. Vishay Semiconductors Power SMD LED CLCC-6 20582 DESCRIPTION The VLMK/Y61. is one of the most robust and light efficient LEDs in the market. Its ceramic package makes it the ideal light source in applications of high thermal considerations allowing the additional current

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. ITU COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC DIST AD 00 ALL RIGHTS RESERVED. R E V IS IO N S P LTR 02 H O U S I N G MATERIAL: C OL OR : NATURAL. 2\ CONTACT MATERIAL: LI QUI D CRYSTAL

mod 534 spectrol 10k

Abstract: potentiometer MOD 534 potentiometer MOD 534 vishay L0438 SCHEMATIC servo dc IGBTS Potentiometric Pressure Transducer AMP Superseal LB 122s SCHEMATIC servo IGBTS Spectrol 157 74
Contextual Info: VISHAY IN T ER T ECHN O L O G Y , INC . INTERACTIVE data book precision potentiometers, industrial sensors vishay sfernice vse-db0100-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

74828

Abstract: AN609 Si6913DQ 548076
Contextual Info: Si6913DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

4686

Abstract: 7483 7945 AN609 Si6925ADQ 74831
Contextual Info: Si6925ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7483

Abstract: AN609
Contextual Info: Si6926AEDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74841

Abstract: AN609 Si6966EDQ 18158
Contextual Info: Si6966EDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: more than you expect Discrete Single Port 10/100 Base-T PDFP-G16 LANDatacom Features 1 Typical Common Electrical Characteristics Inductance 350uH Min. Dielectic Rating 1500VAC Insertion Loss -1.1dB max. -18dB min. -16dB min. Return Loss -14dB min. -12dB min.

Contextual Info: TH I S DRAW ING E i IS U NP UBL I S HE D. BY TYCO E L E C T R O N I C S C O P Y R I G H T 20 SEE 20 R E L E A S E D FOR P U B L I C A T I O N DETA I L CORPORATION. ALL RIGHTS REV 1SI ONS m DESCR1PTION LOC RE S E RV E D. p LTR DATE ECN DWN APVD 04 REVI SED

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. ITU COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 47 R E V IS IO N S P LTR D2 H O U S IN G MATERIAL: COLOR: NATURAL. 2\ CONTACT MA T E RI A L : DESCRIPTION

Contextual Info: Model 552 Vishay Spectrol 7/ 8" 22.2 mm Three Turn Wirewound Upper Grade Precision Potentiometer FEATURES • Large range of ohmic values: 5 Ω to 20 kΩ • Bushing mount or servo mount designs are available • Gangable up to 3 sections • Extra taps available upon request

m 9625

Abstract: mosfet 0018 AN609 Si6966DQ 370970
Contextual Info: Si6966DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74842

Abstract: 2197 4099 9120 A AN609 Si6967DQ
Contextual Info: Si6967DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].