10H8 Search Results

16LB

Contextual Info: Devices 20-Pin 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 bjl=jl£jl£jl=jl£jl=jyi=iy 14H4/-2 12H6/-2 10H8/-2 E E E - AND LOGIC ARRAY E =£> = 0 Ed e = t> =T> i > ID E H > ID E =0 - - AND LOGIC - ARRAY - - n > ID E E 10L8/-2 E E E E - AND - I H > ID

Contextual Info: Devices 20-P in 14H4/-2 12H6/-2 10H8/-2 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 - AND LOGIC ARRAY E - E =£> = 0 Ed = t> =T> i > ID H > ID =0 n > ID e E E - - - AND - ARRAY - E - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3 = T > ID 3 "I EE EEEE EE EE r t

16L8-25

Contextual Info: Devices 20-Pin 14H4/-2 12H6/-2 10H8/-2 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 - AND LOGIC ARRAY E - E =£> = 0 Ed = t> =T> i > ID H > ID =0 n > ID e E E - - - AND - ARRAY - E - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3 = T > ID 3 "I EE EEEE EE EE r t

Contextual Info: Devices 20-Pin 14H4/-2 12H6/-2 10H8/-2 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 - AND LOGIC ARRAY E - E =£> = 0 Ed = t> =T> i > ID H > ID =0 n > ID e E E - - - AND - ARRAY - E - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3 = T > ID 3 "I EE EEEE EE EE r t

PLDC18G8

Abstract: T1216 416rp Cypress 12h6 16v8 programming 15WC
Contextual Info: PLDC18G8 CYPRESS SEMICONDUCTOR CMOS Generic 20-Pin Programmable Logic Device • Generic architecture to replace >tandard logic functions including; 10H8, 1 2 H 6 ,1 4 H 4 ,1 6 H 2 ,1 0 L 8 ,1 2 U , 14L4, 1 6 L 2 ,1 0 P 8 ,1 2 P 6,14P 4,1«P 2,16H 8, 16L 8,16P 8,16R 8,16R 6,16R 4,16R P 8,

cke varistor

Abstract: Z10L820H 10H820 Z15L820H 15H820 15H101 Z15L680H
Contextual Info: RADIAL LEAD METAL OXIDE VARISTORS - HIGH ENERGY SERIES Marking On Part 10H180 10H220 10H270 10H330 10H390 10H470 10H560 10H680 10H820 10H101 10H121 10H151 10H181 1305H 1405H 1505H 1755H 2005H 210LH 230H 250H 275H 300H 320H 350H 385H 420H 460H 480H 510H 550H

Contextual Info: Devices 20-Pin 14H4/-2 12H6/-2 10H8/-2 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 - AND LOGIC ARRAY E - E =£> = 0 Ed = t> =T> i > ID H > ID =0 n > ID e E E - - - AND - ARRAY - E - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3 = T > ID 3 "I EE EEEE EE EE r t

16c1

Abstract: 14H4-2
Contextual Info: Devices 20-Pin 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 bjl=jl£jl£jl=jl£jl=jyi=iy 14H4/-2 12H6/-2 10H8/-2 E E E - AND LOGIC ARRAY E - E =£> = 0 Ed = t> =T> i > ID H > ID =0 n > ID e E E - - - AND - ARRAY - E - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3

16l8

Abstract: 16x4 HAL 16L8 MONOLITHIC MEMORIES 16L8-25 16R8
Contextual Info: Devices 20-Pin 14H4/-2 12H6/-2 10H8/-2 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 - AND LOGIC ARRAY E - E =£> = 0 Ed = t> =T> i > ID H > ID =0 n > ID e E E - - - AND - ARRAY - E - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3 = T > ID 3 "I EE EEEE EE EE r t

16L8-25

Abstract: 16l8 910U 16r8
Contextual Info: Devices 20-P in 14H4/-2 12H6/-2 10H8/-2 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 - AND LOGIC ARRAY E - E =£> = 0 Ed = t> =T> i > ID H > ID =0 n > ID e E E - - - AND - ARRAY - E - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3 = T > ID 3 "I EE EEEE EE EE r t

16L8A-4

Contextual Info: Devices 20-Pin 14H4/-2 12H6/-2 10H8/-2 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 - AND LOGIC ARRAY E =£> = 0 Ed e = t> =T> i > ID E H > ID E =0 - - - ID E E 10L8/-2 - AND - ARRAY - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3 = T > ID 3 "I EE EEEE EE EE 16R8/B/B-2/B-4

16L8B-2

Abstract: 16R6B2
Contextual Info: Devices 20-Pin 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 bjl=jl£jl£jl=jl£jl=jyi=iy 14H4/-2 12H6/-2 10H8/-2 E E E - AND LOGIC ARRAY E =£> = 0 Ed e = t> =T> i > ID E H > ID E =0 - - AND LOGIC - ARRAY - - n > ID E E 10L8/-2 E E E E - AND - I H > ID

16L8B-4

Contextual Info: Devices 20-Pin 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 bjl=jl£jl£jl=jl£jl=jyi=iy 14H4/-2 12H6/-2 10H8/-2 E E E - AND LOGIC ARRAY E =£> = 0 Ed e = t> =T> i > ID E H > ID E =0 - - - ID E E 10L8/-2 - AND - ARRAY - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3

16L8A-2

Contextual Info: Devices 20-Pin 14H4/-2 12H6/-2 10H8/-2 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 - AND LOGIC ARRAY E - E =£> = 0 Ed = t> =T> i > ID H > ID =0 n > ID e E E - - - AND - ARRAY - E - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3 = T > ID 3 "I EE EEEE EE EE 16R8/B/B-2/B-4

16RP4A

Contextual Info: Devices 20-Pin 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 bjl=jl£jl£jl=jl£jl=jyi=iy 14H4/-2 12H6/-2 10H8/-2 E E E - AND LOGIC ARRAY E =£> = 0 Ed e = t> =T> i > ID E H > ID E =0 - - - ID E E 10L8/-2 - AND - ARRAY - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3

16R8A

Contextual Info: Devices 20-Pin 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 bjl=jl£jl£jl=jl£jl=jyi=iy 14H4/-2 12H6/-2 10H8/-2 E E E - AND LOGIC ARRAY E =£> = 0 Ed e = t> =T> i > ID E H > ID E =0 - - - ID E E 10L8/-2 - AND - ARRAY - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3

Contextual Info: PLDC18G8 I CYPRESS SEMICONDUCTOR • Fast — Commercial: tpo = 12 ns, tc o = 10 ns, t§ = 10 ns — Military/Industrial: tpD = 15 ns, t c o = 12 ns, t§ — 12 ns • Low power Generic architecture to replace stan­ dard logic functions including: 10H8, 1 2 H 6 ,1 4 H 4 ,16H 2,10L 8,12L 6,14L 4,

Contextual Info: TICPAL18V8-30M, TICPAL18V8 25C ADVANCED EPICm CMOS GENERIC M i D 3 0 8 7 . DECEMBER 1 9 8 7 • 20-Pin Advanced C M OS Generic PAL •

16V8

Abstract: GAL16LV8 GAL16LV8C GAL16LV8C-10LJ GAL16LV8C-15LJ GAL16LV8C-7LJ GAL16LV8D GAL16LV8D-3LJ GAL16LV8D-5LJ
Contextual Info: ree Lead-Fage P a c k ns Optio le! b Availa Features GAL16LV8 Low Voltage E2CMOS PLD Generic Array Logic Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output

70M15A

Contextual Info: MONOLITHIC CRYSTAL FILTERS FEATURES STABLE TEMPERATURE CHARACTERISTICS CUSTOM SPECIFICATIONS AVAILABLE SPECIFICATIONS CHANNEL SPACING 12.5 kHZ 20.0 kHZ MODEL CENTER PASS RIPPLE FREQUENCY BANDWIDTH kHz kHz MIN dB dBm MAX TERMINATING CASE POLES IMPEDANCE STYLE

C57401AJ

Abstract: C57401J/883B M38510 numbering C57402AJ AMD - C57401J MMI PAL14L8 5962-8779105EX 53RA1681 C57401L
Contextual Info: M ilitary Specialty Memory Whatever your military data buffering needs, Advanced Micro Devices has the right specialty memory device to fit your applica­ tion. All of our military bipolar and CMOS First-in First-out FIFO memories are fully screened to MIL-STD-883.

12H562

Abstract: panasonic plastic film capacitor marking code 10h9 ZR8513 H8822 H12H102 marking ZR 12H112
Contextual Info: Film Capacitors High-Voltage Metallized Polypropylene ECW-H Series This series is designed for applications where high frequency, high pulse voltage and high current are required. Features • • • • Very low loss at high frequency Very small inherent temperature rise

Contextual Info: 3.3V CMOS OCTAL BUFFER/LINE DRIVER PRELIMINARY IDT54/74FCT3244/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CEMOS Technology The IDT54/74FCT3244/A octal buffer/Jine drivers are built using advanced CEMOS, dual metal CMOS technology. These

14L4

Abstract: 10l8 12L6 12H6 16c1 4511 logic diagram 1117 L schematic diagram PAL14L pin shourd PAL10H8
Contextual Info: ADV MICRO PLA/PL E/ ARR AY S =ib U2 b7526 ADV MICRO P L A / P L E / ARRAYS D E | 055755b 0057114 7 96D 27114 D T-V6-/3-V7 Combinatorial PALI 0H8 Series 1 0 H 8 , 1 2 H 6 , 1 4 H 4 , 1 6 H 2 1 6 C 1 1 0 L 8 , 1 2 L 6 , 1 4 L 4 - , 1 6 L 2 Ordering Information