10CLK Search Results

HY57V641620B

Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Contextual Info: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.

hall marking code A04

Abstract: INTELDX4 write-through YSS 928
Contextual Info: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers

Contextual Info: l a tt ic e sem ico nducto r 4bE D • SBAfalMI G Q D m m h BILAT p L S r 1016 ü lL a ttic e programmable Large Scale Integration T -Ÿ é /' Ÿ Û ' wu.»ir.q r j ^ ■ ä ü ä a a iü ä Feature Ÿ a • PROGRAMMABLE HIGH DENSITY LOGIC —• Member of Lattice's pLSI Family

HY57V56820BT-H

Abstract: HY57V56820B HY57V56820BT-6 HY57V56820BT-K
Contextual Info: HY57V12820 L T 4 Banks x 16M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820B is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820B is organized as 4banks of 16,777,216x8.

capacitor 22uF

Abstract: IRM5000 IRM7001
Contextual Info: IRM7001 SIR Modulator/Demodulator Dimensions in inches mm SOIC Package A .393 (10.0) .386 (9.8) B .157 (4.0) .244 (6.2) 8 .150 (3.8) .229 (5.8) 16 9 1 .050 (1.27) BSC .068 (1.75) .054 (1.35) R x 45° .009 (.25) .008 (.19) T .019 (.49) .014 (.35) FEATURES

104LHS31

Abstract: 104PWRI NL6448BC33-31 104PWBR1 lcd backlight nec inverter 7 pin diagram DS2228 NEC color lcd NEC NL6448BC33-31 "LCD timing controller" 3pin variable resistor pin connection
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL6448BC33-31 26 cm 10.4 inches , 640 x 480 pixels, 262,144 colors, Incorporated two-lamp/Edge-light type backlight Wide viewing angle DESCRIPTION NL6448BC33-31 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) comprising

HY57V658020B

Abstract: HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I
Contextual Info: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V658020B is organized as 4banks of 2,097,152x8.

4 Banks x 1m x 32Bit Synchronous DRAM

Contextual Info: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added

Contextual Info: HY57V281620HC L/S T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16

HY57V161610D

Abstract: HY57V161610DTC-10I HY57V161610DTC-55I HY57V161610DTC-6I HY57V161610DTC-7I
Contextual Info: HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of

FDS 4468

Abstract: HBT 01 - 04G INTEL 486 sx sl pinout 240950 JVC 4580 fds 4418 TOT - 4301 INTEL DX4 241199 Intel DX4TM
Contextual Info: intj, INTEL486 PROCESSOR FAMILY • Write-Back Enhanced lntelDX4™ Processor — Up to 100-MHz Operation — Speed-Multiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant

HY57V161610B

Contextual Info: C » « Y U H D f t P - - - - - - - - - - • H Y 57V 161610B 2 Banks x S12K X 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V161610B is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610B is organized as 2banks of

HYNIX HY57V641620HG

Abstract: 3clk HY57V641620HG
Contextual Info: HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.

Contextual Info: HY57V561620B L T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.

54PIN

Abstract: 54pin TSOP HY57V561620C HY57V561620CT HY57V561620ctp
Contextual Info: HY57V561620C L T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.

Contextual Info: KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 May 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 May. 1999 KM416S1120D CMOS SDRAM Revision History

HY57V281620HCT-HI

Abstract: HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI
Contextual Info: HY57V281620HC L/S T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16

CMGA6-P133

Abstract: qml-38535 1048C
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED T REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A STAND ARD M ICRO CIRC UIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 10 PREPARED BY

MN89305

Abstract: 386SX CIRCUIT diagram
Contextual Info: LSIs for Display MN89305 XGA LCD Display Controller • Overview M Di ain sc te on na tin nc ue e/ d The MN89305 is an LCD display controller IC that provides high-speed graphics and high-quality display. The graphics accelerator supports 3-operand ROP operations and thus can draw Windows quickly. The MN89305 also

HYNIX HY57V641620HG

Abstract: HY57V641620HG
Contextual Info: HY57V641620HG L TP 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG(L)TP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG(L)TP is organized as 4banks of 1,048,576x16.

0235

Contextual Info: HY57V64420HGTP 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HGTP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HGTP is organized as 4banks of 4,194,304x4.

HY57V56820CT-6

Contextual Info: HY57V56820C L T 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820C is organized as 4banks of 8,388,608x8.

HY57V161610ETP-5I

Abstract: HY57V161610ETP-7I HY57V161610E HY57V161610ETP-10I HY57V161610ETP-15I HY57V161610ETP-55I HY57V161610ETP-6I HY57V161610ETP-8I HY57V161610ETP-I HY57V161610ETP
Contextual Info: HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.

HY57V561620C

Abstract: HY57V561620CT
Contextual Info: HY57V561620C L T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.