10A 100V BIPOLAR TRANSISTOR Search Results

JANS2N2484

Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Contextual Info: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930

BR 9014 transistor

Abstract: AN-946B FD9014 BR 9014 C TRANSISTOR Pelly high power class d
Contextual Info: AP P LIC A TIO N NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X F E T is t h e t r a d e m a r k t o r I n t e r n a t i o n a l R e c t i f i e r P o w e r M O S F E T s By S. C L E M E N T E , B. PELLY, R. R U T T O N S H A , B. TAYLO R

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

TL494 full bridge inverter

Abstract: dc motor speed control tl494 switching power supply TL494 WELDING TL494 full bridge IR2N6547 Speed control of dc motor using TL494 Ruttonsha make Power diode ratings ir in4007 full bridge TL494 946b
Contextual Info: APPLICATION NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs By S. CLEM EN TE, a . PELLY, R. R U T T O N S H A , B. TAYLOR

IRGBC20S

Abstract: IRGBC20S IGBT
Contextual Info: International BggRectifier IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.687A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve

Q405

Abstract: vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e
Contextual Info: INTERNATIONAL RECTIFIER EbE D 4055455 00105=11 7 • Data Sheet No. PD-9.669 T-3Ì-03 International Usi Rectifier INSULATED GATE BIPOLAR TRANSISTOR IRGBCS6 600V, 19A FEATURES 600V, 19A, TO-220AB IGBT International Rectifier’s IR G series o f Insulated Gate

200w AUDIO AMPLIFIER

Abstract: transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a
Contextual Info: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.

200W TRANSISTOR AUDIO AMPLIFIER

Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
Contextual Info: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.

IRGPH20S

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1138 IRGPH20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

IRGPH20S

Abstract: C41-C41
Contextual Info: PD - 9.1138 IRGPH20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 1200V VCE(sat) ≤ 3.3V

IRGPH20S

Contextual Info: PD - 9.1138 IRGPH20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 1200V VCE(sat) ≤ 3.3V

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

BDS12M2A

Abstract: EG marking Q217
Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

IGBT DRIVER ignition coil automotive

Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
Contextual Info: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of

Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA16N170AHV IXBT16N170AHV VCES = 1700V IC25 = 16A VCE sat  6.0V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700

mosfet 10a 600v

Abstract: IRGBC20S IGBT D-12 IRGBC20S
Contextual Info: PD - 9.687A IRGBC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.4V

zvn4306

Abstract: ZTX Zetex ZTX108 ZTX504 analog switch circuit using mosfet analog switch circuit using mosfet to control zetex transistors TO92 ZETEX DN2 ZTX855 ZTX955
Contextual Info: Design Note 2 Issue 2 June 1995 Sonar Transducer Driver using TO92 Style Bipolar Transistors Design Note 3 Issue 2 June 1995 High Current High Voltage Analog Switches + 100V R7 C4 Input ZVN4306 ZVN4306 Output R6 ZTX 855 C2 R8 VR1 ZTX 108 Output R9 R1 R4 Control

TO-220AB transistor package

Contextual Info: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

100MHZ

Abstract: FMMT491
Contextual Info: RECTRON FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range

Contextual Info: FMMT591 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : -1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range

Contextual Info: FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range

100MHZ

Abstract: FMMT591
Contextual Info: RECTRON FMMT591 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : -1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range