105A 300 Search Results

FX105AP3

Abstract: 1035B 000M53 1N914 FX105A FX105AD4 FX105P IN914
Contextual Info: r=ft irjUn] CML Semiconductor Products >i Tone Detector F X 105A D/105A/3 December 1995 1.0 1.1 Features Advance Information Operates in High Noise Conditions Adjustable Bandwidth > 36dB Signal Input Range Adjustable Frequency High Sensitivity Wide Voltage Range (2.7V to 5.5V

Contextual Info: IXFR120N20 HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   200V 105A  19.5m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS

ST103S

Abstract: rc 3150 20UNF
Contextual Info: Bulletin I25183 rev. B 03/94 ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features 105A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance

Contextual Info: Bulletin I25183 rev. B 03/94 ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features 105A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance

1N914

Abstract: FX105 FX105A FX105AD4 FX105AP3 FX105P IN914 capacitor c3a
Contextual Info: FX105A Tone Detector D/105A/5 September 1999 1.0 Features Provisional Issue • Operates in High Noise Conditions • Adjustable Bandwidth • ≥ 36dB Signal Input Range • Adjustable Frequency • High Sensitivity • Wide Voltage Range 2.7V to 5.5V •

220nf capacitor

Abstract: FX105 1N914 FX105A FX105AD4 FX105AP3 FX105P IN914 5v ZENER DIODE
Contextual Info: FX105A Tone Detector D/105A/5 September 1999 1.0 Features Provisional Issue • Operates in High Noise Conditions • Adjustable Bandwidth • ≥ 36dB Signal Input Range • Adjustable Frequency • High Sensitivity • Wide Voltage Range 2.7V to 5.5V •

Contextual Info: APTMC120AM25CT3AG VDSS = 1200V RDSon = 25mΩ max @ Tj = 25°C ID = 105A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

N mosfet 100v 200A

Abstract: 100V N-channel mosfet FQH90N10V2
Contextual Info: QFET FQH90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)

N mosfet 100v 200A

Abstract: FQA90N10V2 100V N-Channel MOSFET
Contextual Info: QFET FQA90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)

HW-105A

Contextual Info: InSb Hall Element HW-105A Shipped in packet-tape reel 5,000pcs per reel Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings Item Symbol Max. Input Current Ⅰc

Contextual Info: AOT292L/AOB292L 100V N-Channel MOSFET General Description Product Summary The AOT292L/AOB292L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 100V 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

Eupec bsm 75 gb 120

Abstract: A2106 C67076-A2106-A70 gb120dn2
Contextual Info: BSM 75 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 75 GB 120 DN2 1200V 105A IC Package Ordering Code HALF-BRIDGE 1 C67076-A2106-A70 Maximum Ratings Parameter

Contextual Info: BSM 75 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 75 GB 120 DN2 1200V 105A IC Package Ordering Code HALF-BRIDGE 1 C67076-A2106-A70 Maximum Ratings Parameter

C67076-A2106-A70

Contextual Info: BSM 75 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM 75 GB 120 DN2 1200V 105A Package Ordering Code HALF-BRIDGE 1 C67076-A2106-A70 Maximum Ratings Parameter

Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mΩ Features Description • RDS on = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

irf 450a

Abstract: IRFPS37N50A j 6810 50s MARKING CODE 247t J 6810 D MJ 6810
Contextual Info: PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.015Ω G ID = 105A S

Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mW Features Description • RDS on = 6.85mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mW Features Description • RDS on = 6.7mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

IRL6903

Contextual Info: PD - 9.1538B IRL6903 HEXFET Power MOSFET Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D VDSS = -30V RDS on = 0.011Ω G ID = -105A…

irf 450a

Abstract: IRFPS3815 4490 mosfet
Contextual Info: PD - 93911 IRFPS3815 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.015Ω G ID = 105A S Description The HEXFET® Power MOSFETs from International

MS610

Abstract: 11300A
Contextual Info: Single Phase Rectifier Bridges PSB 105 IdAVM = 105A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 105/08 PSB 105/12 PSB 105/14 PSB 105/16 PSB 105/18 Symbol Test Conditions IdAVM IFSM TC = 85°C, module

siemens igbt BSM 75 gb 100

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 300 BSM75GB120DN2 siemens igbt BSM 150 Gb 160 d C67076-A2106-A70 siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d bsm75gb120
Contextual Info: S IE M E N S <3 T 3 - '5 2 3 bsm75g b i 2odn2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 75 GB 120 DN2 1200V 105A !c Package Ordering Code HALF-BRIDGE 1 C67076-A2106-A70

Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N30P3 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N30P3 RDS on trr = = ≤ ≤ 300V 210A Ω 14.5mΩ 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS