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    FDB082N15A Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDB082N15A
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N CH 150V 105A D2PAK Original PDF 9
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    onsemi FDB082N15A

    Transistor: N-MOSFET; unipolar; 150V; 83A; Idm: 468A; 294W; D2PAK
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    Fairchild Semiconductor Corporation FDB082N15A

    150 V, 105 A, 8.2 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 105A I(D), 150V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA FDB082N15A 200
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    FDB082N15A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDB082N15A

    Abstract: FDB08
    Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mΩ Features Description • RDS on = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		fdb082n15afdb08 PDF

    Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mW Features Description • RDS on = 6.7mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		fdb082n15a PDF

    Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		fdb082n15a PDF

    Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		fdb082n15a PDF