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    FDP083N15A Search Results

    FDP083N15A Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP083N15A
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V TO-220-3 Original PDF 9
    FDP083N15A_F102
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N CH 150V 105A TO220-3 Original PDF 9
    FDP083N15A-F102
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 83A TO220-3 Original PDF 741.52KB
    SF Impression Pixel

    FDP083N15A Price and Stock

    onsemi

    onsemi FDP083N15A

    MOSFET N-CH 150V 83A TO220-3
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    DigiKey FDP083N15A Tube 50
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    onsemi FDP083N15A-F102

    N-Channel PowerTrench? MOSFET 150V, 117A, 8.3mO - Rail/Tube (Alt: FDP083N15A-F102)
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    Avnet Americas () FDP083N15A-F102 Tube 329
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    FDP083N15A-F102 Tube 20 Weeks 800
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    Mouser Electronics () FDP083N15A-F102 11,090
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    FDP083N15A-F102 10,684
    • 1 $5.86
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    Verical FDP083N15A-F102 912 3
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    Newark FDP083N15A-F102 Bulk 1,127 1
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    Onlinecomponents.com FDP083N15A-F102
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    TME FDP083N15A-F102 48 1
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    Avnet Silica FDP083N15A-F102 21 Weeks 50
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    EBV Elektronik FDP083N15A-F102 21 Weeks 50
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    Flip Electronics FDP083N15A-F102 15,200
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    FDP083N15A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original
    FDP083N15A PDF

    Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mΩ Features Description • RDS on = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDP083N15A PDF

    FDP083N15A

    Contextual Info: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original
    FDP083N15A FDP083N15A PDF

    Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mW Features Description • RDS on = 6.85mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    FDP083N15A PDF

    F102 equivalent

    Contextual Info: FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    FDP083N15A FDP083N15A F102 equivalent PDF