FDP083N15A Search Results
FDP083N15A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDP083N15A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V TO-220-3 | Original | 9 | |||
| FDP083N15A_F102 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 150V 105A TO220-3 | Original | 9 | |||
| FDP083N15A-F102 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 83A TO220-3 | Original | 741.52KB |
FDP083N15A Price and Stock
onsemi FDP083N15AMOSFET N-CH 150V 83A TO220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDP083N15A | Tube | 50 |
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Buy Now | ||||||
onsemi FDP083N15A-F102N-Channel PowerTrench? MOSFET 150V, 117A, 8.3mO - Rail/Tube (Alt: FDP083N15A-F102) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDP083N15A-F102 | Tube | 329 |
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Get Quote | ||||||
| FDP083N15A-F102 | Tube | 20 Weeks | 800 |
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FDP083N15A-F102 | 11,090 |
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| FDP083N15A-F102 | 10,684 |
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FDP083N15A-F102 | 912 | 3 |
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FDP083N15A-F102 | Bulk | 1,127 | 1 |
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FDP083N15A-F102 |
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FDP083N15A-F102 | 48 | 1 |
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FDP083N15A-F102 | 21 Weeks | 50 |
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FDP083N15A-F102 | 21 Weeks | 50 |
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FDP083N15A-F102 | 15,200 |
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FDP083N15A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior |
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FDP083N15A | |
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Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mΩ Features Description • RDS on = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
Original |
FDP083N15A | |
FDP083N15AContextual Info: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior |
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FDP083N15A FDP083N15A | |
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Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mW Features Description • RDS on = 6.85mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
Original |
FDP083N15A | |
F102 equivalentContextual Info: FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
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FDP083N15A FDP083N15A F102 equivalent |