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FDP083N15A Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDP083N15A		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V TO-220-3	Original	PDF		9
FDP083N15A_F102		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N CH 150V 105A TO220-3	Original	PDF		9
FDP083N15A-F102		ON Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 83A TO220-3	Original	PDF	741.52KB

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onsemi


onsemi FDP083N15A-F102 Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	FDP083N15A-F102		41		1	1 $4.21 10 $3.26 100 $3.26 1000 $3.26 10000 $3.26	Buy Now
Avnet Americas	FDP083N15A-F102	Tube		35 Weeks	800	1 - 10 - 100 - 1000 $2.39 10000 $2.32	Buy Now
Mouser Electronics	FDP083N15A-F102		10,997			1 $6.60 10 $4.15 100 $2.93 1000 $2.79 10000 $2.79	Buy Now
Newark	FDP083N15A-F102	Bulk	992		1	1 $5.82 10 $4.17 100 $3.23 1000 $2.83 10000 $2.83	Buy Now
Onlinecomponents.com	FDP083N15A-F102					1 - 10 - 100 - 1000 $2.43 10000 $2.43	Buy Now

Avnet Silica	FDP083N15A-F102			53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FDP083N15A-F102			53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	FDP083N15A-F102		15,200			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FDP083N15A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior	Original	fdp083n15a	PDF
Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mΩ Features Description • RDS on = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	fdp083n15a	PDF
FDP083N15A Contextual Info: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior	Original	fdp083n15a	PDF
Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mW Features Description • RDS on = 6.85mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	fdp083n15a	PDF
F102 equivalent Contextual Info: FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.	Original	fdp083n15a f102 equivalent	PDF