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    GB120DN2 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSM100GB120DN2HOSA1

    IGBT MOD 1.2kV 150A 800W Module Tray
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    Rochester Electronics BSM100GB120DN2HOSA1 3,458 1
    • 1 $189.48
    • 10 $189.48
    • 100 $178.11
    • 1000 $166.74
    • 10000 $166.74
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    Infineon Technologies AG BSM100GB120DN2B2HOSA1

    Insulated Gate Bipolar Transistor Module
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    Rochester Electronics BSM100GB120DN2B2HOSA1 17 1
    • 1 -
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    • 100 $75.22
    • 1000 $67.30
    • 10000 $63.34
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    Infineon Technologies AG BSM75GB120DN2_E3223C-SE

    Insulated Gate Bipolar Transistor Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics BSM75GB120DN2_E3223C-SE 24 1
    • 1 -
    • 10 -
    • 100 $88.01
    • 1000 $78.74
    • 10000 $74.11
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    Infineon Technologies AG BSM100GB120DN2KHOSA1

    BSM100GB120 - Insulated Gate Bipolar Transistor Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics BSM100GB120DN2KHOSA1 678 1
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    Infineon Technologies AG BSM100GB120DN2FE325HDLA1

    IGBT MOD 1.2kV 150A 800W Module_E3256
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics BSM100GB120DN2FE325HDLA1 32 1
    • 1 -
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    • 100 $71.82
    • 1000 $64.26
    • 10000 $60.48
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    GB120DN2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sm3k

    Abstract: siemens igbt BSM 150 Gb 160 d C67070-A2300-A70 47D10 120DN2
    Contextual Info: SIEMENS 3 lpf- <g ^ q BSM GB120DN2 lGBT Power Module - Half-bridge • Including fast free-wheeling diodes * Package with insulated metal base plate Type BSM200GB 120 DN2 VcE h 1200V 290A Package Ordering Code HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings


    OCR Scan     		c67070-a2300-a70mar-29-19966c996c5is0c026+5sc996csm3ksiemens igbt bsm 150 gb 160 d47d10120dn2 PDF

    GD120DN2

    Abstract: igbt simulation BSM50GD120DN2 BSM50GD120DN2 APPLICATION pspice high frequency igbt BSM50 the calculation of the power dissipation for the IGBT GB120DN2 Semiconductor Group igbt Design equations inverter
    Contextual Info: Thermal Behavior of Power Modules in PWM-Inverter Abstract In the following, the thermal behavior of power modules in PWM-Inverters will be examined. The starting point is an analysis of single-chip and hybrid structures. A parameter for the characterization of the thermal behavior is the dynamic response in time of the thermal


    Original     		gd120dn2igbt simulationbsm50gd120dn2bsm50gd120dn2 application+6pspice high frequency igbtbsm50the calculation of the power dissipation for the igbtgb120dn2semiconductor group igbtdesign equations inverter PDF