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    IXFN210N30P3 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFN210N30P3
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 192A SOT-227 Original PDF 5
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    IXFN210N30P3 Price and Stock

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    IXYS Corporation IXFN210N30P3

    MOSFET Modules N-Channel: Power MOSFET w/Fast Diode
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    Mouser Electronics IXFN210N30P3 549
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    TTI IXFN210N30P3 Tube 300
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    Bristol Electronics IXFN210N30P3 120 1
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    Quest Components () IXFN210N30P3 96
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    IXFN210N30P3 96
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    Littelfuse Inc IXFN210N30P3

    Mosfet Module, 300V, 192A, 1.5Kw; |Littelfuse IXFN210N30P3
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    Newark IXFN210N30P3 Bulk 160 1
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    RS IXFN210N30P3 Bulk 8 Weeks 10
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    Onlinecomponents.com IXFN210N30P3
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    IXFN210N30P3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFN210N30P3

    Contextual Info: Preliminary Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN210N30P3 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		ixfn210n30p3250nse153432100ms+1210n30p3 PDF

    Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N30P3 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixfn210n30p3250nse153432100ms+1210n30p3 PDF

    IXFN210N30P3

    Abstract: E153432
    Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN210N30P3 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		ixfn210n30p3100ms210n30p3e153432 PDF