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    IXFN210N30P3 Search Results

    IXFN210N30P3 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFN210N30P3
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 192A SOT-227 Original PDF 5
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    IXFN210N30P3 Price and Stock

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    IXYS Corporation IXFN210N30P3

    MOSFET N-CH 300V 192A SOT227B
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    DigiKey IXFN210N30P3 Tube 229 1
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    Mouser Electronics IXFN210N30P3 734
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    Bristol Electronics IXFN210N30P3 120 1
    • 1 $32.80
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    Quest Components () IXFN210N30P3 96
    • 1 $35.53
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    IXFN210N30P3 96
    • 1 $57.49
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    TTI IXFN210N30P3 Tube 300
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    TME IXFN210N30P3 1 1
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    Chip 1 Exchange IXFN210N30P3 1,959
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    New Advantage Corporation IXFN210N30P3 1,195 1
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    Littelfuse Inc IXFN210N30P3

    Mosfet Module, N-Channel, 300V, 192A; Channel Type:N Channel; Continuous Drain Current Id:192A; Drain Source Voltage Vds:300V; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:1.5Kw; Product Range:- Rohs Compliant: Yes |Littelfuse IXFN210N30P3
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    Newark IXFN210N30P3 Bulk 180 1
    • 1 $49.44
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    IXFN210N30P3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFN210N30P3

    Contextual Info: Preliminary Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN210N30P3 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		IXFN210N30P3 250ns E153432 100ms 210N30P3 IXFN210N30P3 PDF

    Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N30P3 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFN210N30P3 250ns E153432 100ms 210N30P3 PDF

    IXFN210N30P3

    Abstract: E153432
    Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN210N30P3 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFN210N30P3 100ms 210N30P3 IXFN210N30P3 E153432 PDF