10150 CT Search Results

2006W

Contextual Info: TEMEX Troyes 2 Rue Robert Keller 10150 Pont Sainte Marie / Tel: +33 0 3.25.76.45.00 / Fax: +33(0)3.25.80.34.57 / E-mail: troyes@temex.fr / www. temex.fr CTC5556-W S110 OSCILLATOR DATA SHEET Analog Temperature Compensated Crystal Oscillator NUMBER REVISION

MB90F0

Abstract: H352 MB90F931
Contextual Info: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM44-10150-1E F2MC-16LX 16-BIT MICROCONTROLLER MB90930 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90930 Series HARDWARE MANUAL For the information for microcontroller supports, see the following web site.

MBR10XX

Abstract: MBRS1035 mbrs1045 3C0220 IC-125T
Contextual Info: E TAIWAN SEMICONDUCTOR [Pb RoHS M B R S 1035 - M B R S 10150 10.0 AMPS. Surface M ount Schottky Barrier Rectifiers D2PAK C OM PLIANCE - -c<> ❖ •j « * S i * Plastic m aterial used carries Underwriters Laboratory C lassifications 94V-0 Metal sil icon ju n cti o n , m ajority carrie r conduction

Contextual Info: S R 1020 - S R 10150 TAIWAN SEMICONDUCTOR s 10.0 AMPS. Schottky Barrier Rectifiers TOr220AB RoHS COM PLIANCE Features ❖ 4A- Low power loss, high efficiency. High current capability. Low VF. High reliability <► •S- High s u rg e c u rre n t c a p a b ility.

SRF10-15

Abstract: marking D09 marking code nt E33E SRF10150 SRF1020 SRF1060 srf 1060 marking hga
Contextual Info: TAIWAN S S R F 1020 - S R F 10150 SEMICONDUCTOR Isolated 10.0 AMPS. Schotiky Barrier Rectifiers RoHS ITO-220AB C O M P L IA N C E .•¿»y.?: v*v .ii.YJ.Zt> k ' và Features <► •i' 4<► ■4* 4- miiua; For surface mounted application Low power loss, high efficiency

saa 1030

Abstract: U212B SAA 1020 marking A3 Taiwan semiconductor SRS1020 tc-2b 94v-0
Contextual Info: E S R S 1020 • S R S 10150 TAIWAN SEMICONDUCTOR [P b 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers D*PAK RoHS COMPLIANCE . IHr^l .ty. .IW I I' -1 s Features «• ■i' ■4* «• ■i' -$■ «• 4- F o r su rfa ce m o u n te d a p p lica tio n

SRF10-15

Abstract: SRF10150 SRF1020 SRF1060 srf 1060
Contextual Info: E TAIWAN SEMICONDUCTOR SRF 1020 - S R F 10150 Isolated 10.0 AMPS. Schotiky Barrier Rectifiers RoH S ITO- COMPLIANCE 220 AB PMICJiWX wx j" F e a tu r e s <► <' 4<► •4* 4- .w /.y / 2^J/4;CK .1 .v."!rip k / i » ; > t*» zr*tKi:- J For surface mounted application

marking A3 Taiwan semiconductor

Abstract: tc-2b 94v-0 80 ria 120 marking code fz MARKING FZ SRS1020 marking code re
Contextual Info: % T A IW A N S R S 1020 • S R S 10150 SEMICONDUCTOR 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers D2PAK RoHS C O M P L IA N C E . IKT\4 .ty, I I' -1 s Features «• ■ i' ■4* «• ■ i' -$■ F o r su rfa ce m o u n te d a p p lica tio n

Contextual Info: rEHEPATOPHblM TPMOfl ry-iooA TRIODE T e H e p a T o p H b iM T p n o fl ry -1 0 0 A n p e f lH a 3 - HaneH flrm reHepwpoBaHna K o n e ô a n m b CTaq u o H a p H b i x n p o M b i i u n e H H b i x r e H e p a T o p a x BbicoKOHacTOTHoro HarpeBa, a TaioKe Arm yci/ineHun moi^hoctm b CTaL MOHapHbix nepefla-

Contextual Info: RF TRANSFORMERS Im p ed an ce R atio Type Freq u en cy R ange M H z V ersus M axim um In sertio n Loss 3dB * * * 2dB 1 dB P o w er R ating (W atts) m ax. P/N 1:1 1:1 1:1 1:1.5 1:1.5 1:2 1:4 1:4 1:9 1:16 A A A A A A A A A A 5-1000 0.15-400 0.01-150 2-400

Contextual Info: RF TRANSFORMERS IMPEDANCE RATIO 1:1 1:1 1:1 1:1.5 1:1.5 1:2 1:4 1:4 1:8 1:16 1:1 1:1 1:1 1:1.5 1:2 1:4 1:1 1:1.5 1:2 1:4 1:1 1:1.5 TYPE A A A A A A A A A A B B B B B B C C C C D D D D D D E E ; E; ;• E E F F F t il 1:2 1:3 1:4 1:1 1:2 ■- ltd'. 1:13 1:16

Contextual Info: RF TRANSFORMERS Im pedance Ratio Frequency Range (MHz Versus Maximum Insertion Loss Type Miscellaneous Components 3d B 2d B A A A A A A A A A A 5-1000 0.15-400 0.01-150 2-400 0.02-100 2-400 1-1000 0.2-200 0.15-200 0.3-120 5-800 0.35-200 0.02-100 3-300 0.05-50

RCA 40636 transistor

Abstract: rca 40636 rca 40327 RCA 40325 40327 rca RCA 2N3055 transistor 2N3055 RCA rca 40363 RCA 40321 BUX 115
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í lt > 1 A max. Pt - 10 W max. jTO-39»* lc > -1 A max. Py - 10 W max. (TO-39 * 32 x 32 a 42x42 42x42

2N6491 SWITCH

Abstract: 2N6489 SWITCH 4-0992 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

BU106

Abstract: 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510 2n5239 complement
Contextual Info: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V

RCA1E02

Abstract: 40327 RCA1A15 bu 25200 BUX67B
Contextual Info: w a rn High-Voltage n-p-n and p-n-p Type Selection Charts V CEO *sus V C EX^SUS^ V V •c A V CE V Temp.—°C 25 2N3439 F A M ILY n-p-n) High Voltage, Complementary to 2N5415 Family f yI = 15 M H z min; P y1 = 10 W max 40346 2N34402N4064403902N34392N406340385A U D IO T Y P E S

2N6214

Abstract: BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

2N6175

Abstract: 2N5296 RCA 2N5415 2N6180 2N6491 SWITCH 2N3439 2N3440 2N5840 2N6079 2N6177
Contextual Info: H IG H -V O L T A G E N -P-N & P-N-P P O W E R T Y P E S 1C t o 3 0 A . . . f r t o 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í lt > 1 A max. Pt - 10 W max. jTO-39»* lc > -1 A max. Py - 10 W max. (TO-39 * 32 x 32a 42x42

2N6179

Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

RCA 40313

Abstract: 40328 RCA411 40318 RCA 2N5415 2N6177 RCA 40373 2N3439 2N3440 40322
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

up 6103

Abstract: General electric Triode 265
Contextual Info: rEHEPATOPHblM TPMOfl ry-iooE TRIODE reHepaTopHbiü Tpno,q ry-1006 npe,qHa3HaMeH ,qrm re H e p u p o B a H n a K o n e ô a n m b C T a q n o H a p H b ix n p o M b iw n e H H b ix reHe p a T o p a x BbicoKonacTOTHoro HarpeBa, a The ry-1006 triode is used as an oscillator in statio­

RCA TO-5

Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT

Contextual Info: AflPLI FON IX INC 45E ] • Dfi0t.2B7 0D0D04? ? ■ AFX T P IN Diode Sw itches Listed by increasing Number of Throws and I.L.) ~ }$ Typ Freq. Range (MHz) Typ Max Isolation Typ Min TW M 5000 SPST 10-1500 1.0 1.5 50 TW D5002 SPDT 30-1000 0.9 1.8 TW D5001 SPOT

RY100

Abstract: ScansU9X26
Contextual Info: rEHEPATOPHblM TPMOfl ry-iooE TRIODE reHepaTopHbiü Tpno,q ry-1006 npe,qHa3HaMeH ,qrm re H e p u p o B a H n a K o n e ô a n m b C T a q n o H a p H b ix n p o M b iw n e H H b ix reHe p a T o p a x BbicoKonacTOTHoro HarpeBa, a The ry-1006 triode is used as an oscillator in statio­