C812 Search Results

Contextual Info: BRIGHT LED ELECTRONICS CORP. BS-C812BI SINCE 1981 ● Features : 1. 0.80 inch 20.4mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: LUMEX OP TO /C OMPONENTS INC ETE D • 5blbll3 000 070 1 fi ■ T - m ~ 3 3 :O ff NUMERIC DISPLAYS SINGLE DIGIT SERIES ■ LDS-81X Line Item Lumex Part Number Com. Anode Com. Cathode 1 LDS-A811Rl LDS-C811RI 2 LDS-A812RI LDS-C812RI 3 LDS-A813RI LDS-C813RI 4

marking 3A sot-89

Abstract: marking AE SOT-89 BTB1188M3 BTD1766M3
Contextual Info: CYStech Electronics Corp. Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : 2006.02.15 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1188M3 Features • Low VCE sat , VCE(sat)=-0.45 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics

A854R

Contextual Info: Part No. D igit Size 0.8" A b s o lu te M a x im u m Peak E m itte d C om m on Com m on Anode C a th o d e BS-A811RD BS-C811RD Red A815RD C815RD A812RD C812RD A813RD C813RD D ra w in g W a ve L e n g th C o lo r E le c tro -O p tic a l ?.p nm If(m A ) Typ.

SN 76033

Abstract: C804 C805 rezystor
Contextual Info: 138 10 TOR FONII Sygnaf rn.cz z d e te k to ra -<► - -<»- C809 0,1 — 1 : C801 —100 •■■ ~x C- C812 0,01 R733 1M « oŒ Rys. 10.9. Stopien wyjsciowy fonii z ukiadem scalonym SN 76033 finny Ferguson

IR10D

Abstract: t1nc LDS-C812RI
Contextual Info: □RAWING NUMBER LDS-C812RI 8 .4 .3 3 1 rÜ n ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY VIEWING ANGLE EMITTED COLOR EPOXY SEGMENT FONT COLOR |— 2.54 (.1 0 ) 17.7B (.7 0 ) Ir = 2 0 m A

LDD-C812RI

Contextual Info: <LX> UNCONTROLLED DOCUMENT REV. PART NU M BER REV. LDD-C812RI B E.C.N. NU M BER AND REVISION COMMENTS E.C.N. # 1 0 3 9 6 & $ 1 0 3 3 7. 1 1 -7 -9 7 B E.C.N. #1 0 B R D R . & REDRAWN. 2 -1 2 -9 9 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PEAK WAVELENGTH If = 10mA

c815

Abstract: F832 BD-A811RD BD-A812RD BD-A813RD BD-A814RD BD-A815RD BD-A815RE BD-A816RD BD-A81FRD
Contextual Info: Part No. Digit Size 0.80" Dual-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BD-A811RD BD-A815RD BD-A815RE BD-A812RD BD-A813RD BD-C811RD BD-C815RD BD-C815RE BD-C812RD BD-C813RD BD-A814RD BD-C814RD BD-A816RD BD-A81FRD BD-E811RD BD-E815RD BD-E815RE

symbol of Bc 148 transistor

Abstract: SOT-89 marking bc of transistor bc 148 BTB1188M3 BTD1766M3 BC 148 TRANSISTOR SOT89 bc on BC 148 TRANSISTOR
Contextual Info: CYStech Electronics Corp. Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1188M3 Features • Low VCE sat , VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics

B1182

Abstract: Transistor B1182 B1182 transistor BTB1182J3 power transistors B1182 BTD1758J3 btd1758
Contextual Info: CYStech Electronics Corp. Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1182J3 Features • Low VCE sat , VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics

c815

Abstract: c816rd F832 BD-A811RD BD-A812RD BD-A813RD BD-A814RD BD-A815RD BD-A815RE BD-A816RD
Contextual Info: SINCE 1981 Part No. Digit Size 0.80" Dual-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BD-A811RD BD-A815RD BD-A815RE BD-A812RD BD-A813RD BD-C811RD BD-C815RD BD-C815RE BD-C812RD BD-C813RD BD-A814RD BD-C814RD BD-A816RD BD-A81FRD BD-E811RD

BS-C812RI

Contextual Info: BRIGHT LED ELECTRONICS CORP. BS-C812RI SINCE 1981 ● Features : 1. 0.80 inch 20.40mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

DATASHEET OF IC 741

Abstract: grinder C8870-02 c8870 AC100 AC200 C8870-01
Contextual Info: Optical MicroGauge C8125-01 The C8125-01 is designed to measure the thickness of wafers without contact. ▲ Optical MicroGauge C8125-01 ▲ Wafer Thickness Mapping System C8870-01 Recently, with the development of IC cards and 3dimensional systems, the technology for uniformly

LDD-C812RI

Contextual Info: @ UNCONTROLLED DOCUMENT REV. PART NUMBER REV. LDD-C812RI B E.C.N. NU M BER AND REVISION COMMENTS E.C.N. # 1 0 3 9 6 & # 1 0 3 8 7 . 1 1 -7 -9 7 B E.C.N. # 1 OBRDR. & REDRAWN. 2 -1 2 -9 9 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN TYP PEAK WAVELENGTH

Contextual Info: bG^Mlò £5007304 TQ3 MgLMicro Linear July 1997 PRELIMINARY ML6697 100BASE-TX Physical Layer with Mil GENERAL DESCRIPTION FEATURES The ML6697 implements the complete physical layer of the Fast Ethernet 10OBASE-TX standard. The ML6697 offers a single-chip per-port solution for Mil-based

IC801

Abstract: IPC-A-600 ze 003 ic ze 003 ic803 RN10D PC401 CONDUCTIVE INK IC-700 artec
Contextual Info: F A B R IC A T IO N L 2 4 S IL K S C R E E N T O P ( L 2 6 ) R O U T IN G T O P (L 1 ) 145x100M M - 1 4 5 .0 m m - TMC457 Eval Board v1.0 L800 + D8D0 • XBOO m GND Cl +48V C801 E 3 [•~~1[~1 C805 C8W I GND A I_/iBTffl . C8< R704 I E U a R B O l1

TRANSISTOR SMD MARKING CODE

Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
Contextual Info: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose

AD7226KN

Abstract: 3 phase sine wave generation C812b
Contextual Info: a FEATURES Four 8-Bit DACs with Output Amplifiers Skinny 20-Pin DIP, SOIC and 20-Terminal Surface Mount Packages Microprocessor Compatible TTL/CMOS Compatible No User Trims Extended Temperature Range Operation Single Supply Operation Possible LC2MOS Quad 8-Bit D/A Converter

24co1

Abstract: LM7805T LM7805-TO92 LM7805-TO application notes CS5460 15 1e75 cs 13 02902 MT2113-ND TRANS-2102 CSE187-L
Contextual Info: AN220 Watt-Hour Meter using PIC16C923 and CS5460 FIGURE 1: Authors: WATT-HOUR METER Brett Duane, Stephen Humberd Microchip Technology Inc. OVERVIEW This application note shows how to use a PIC16C923 microcontroller to control operation of the CS5460 power measurement integrated circuit from Cirrus

6da5

Contextual Info: P art No D ig it C om m on Size 0.5" A b s o lu te M a x im u m P eak E m itte d C om m on Anode C a th o d e BG-A501RD BG-C501RD Red A505RD C505RD Bright Red A502RD C502RD A503RD C503RD D ra w in g W a ve L e n g th C o lo r E le c tro -O p tic a l Xp nm

CFU455D2

Abstract: MC3361BD murata ceramic fm filter E 10.7 s audio squelch circuit design MC3361BP
Contextual Info: Order this document by MC3361B/D M M O TO R O LA M C3361B Low Pow er N arrow band FM IF The M C 3361B includes an O scillator, Mixer, Lim iting A m plifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute S w itch . T h is d e vice is d e s ig n e d fo r use in FM dual c o n ve rsio n

LP2985A-10

Abstract: R707 U820 diode PTC C970
Contextual Info: User's Guide SBOU087A – August 2010 – Revised April 2011 Multi-Cal-System Evaluation Module This user’s guide describes the characteristics, operation, and the use of the Multi-Cal-System evaluation module EVM . It covers all pertinent areas involved to properly use this EVM board. The document

U820 diode

Abstract: dale R003 LP2985A-10 DALE R005
Contextual Info: User's Guide SBOU094 – September 2010 Multi-Cal-Slave Evaluation Module This user’s guide describes the characteristics, operation, and the use of the Multi-Cal-Slave evaluation module EVM . It covers all pertinent areas involved to properly use this EVM board. The document

C812C

Abstract: op amp c812 dac812c
Contextual Info: C812 /T f/? M ic ro Networks A DIVISION OF U N t T B O O « U L T R A -H IG H -S P E E D C U R R E N T -O U T P U T 12-B it D A C CORPORATION DESCRIPTION FEATURES C812 is an extrem ely fa s t (65nsec m ax settling tim e for a full-scale output step settling to ± 1 /2 LSB , current-output