BTD1758 Search Results

BTD1758 Datasheets (1)

Filter by Manufacturer

CYStech Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BTD1758J3		CYStech Electronics	Low Vcesat NPN Epitaxial Planar Transistor	Original	PDF	138.71KB	4

BTD1758 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
d1758 Abstract: Transistor d1758 to 252 d1758 BTD1758J3 BTB1182J3 btd1758 Contextual Info: CYStech Electronics Corp. Spec. No. : C842J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1758J3 Features • Low VCE sat , VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A • Excellent current gain characteristics	Original	c842j3 btd1758j3 btb1182j3 o-252 +5ul94v-0 d1758 transistor d1758 to 252 d1758 btd1758	PDF
B1182 Abstract: Transistor B1182 B1182 transistor BTB1182J3 power transistors B1182 BTD1758J3 btd1758 Contextual Info: CYStech Electronics Corp. Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1182J3 Features • Low VCE sat , VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics	Original	c812j3 btb1182j3 btd1758j3 o-252 +6ul94v-0 b1182 transistor b1182 b1182 transistor power transistors b1182 btd1758	PDF

Catalog Datasheet

Type

Document Tags

PDF

d1758

Abstract: Transistor d1758 to 252 d1758 BTD1758J3 BTB1182J3 btd1758
Contextual Info: CYStech Electronics Corp. Spec. No. : C842J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1758J3 Features • Low VCE sat , VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A • Excellent current gain characteristics

Original

c842j3 btd1758j3 btb1182j3 o-252 +5

PDF

B1182

Abstract: Transistor B1182 B1182 transistor BTB1182J3 power transistors B1182 BTD1758J3 btd1758
Contextual Info: CYStech Electronics Corp. Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1182J3 Features • Low VCE sat , VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A • Excellent current gain characteristics

Original

c812j3 btb1182j3 btd1758j3 o-252 +6

PDF