1014 BATTERY Search Results

FM28V020-T

Contextual Info: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V100-TG

Abstract: RAMTRON
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

CDEP105-3R2MC-88

Abstract: 10TPD150M LTC3835 LTC3835-1 Si4840DY DN1014
Contextual Info: advertisement 80µA Quiescent Current Synchronous Step-Down Controller Extends Battery Life in Automotive Applications – Design Note 1014 Julian Zhu Introduction Battery powered applications that have a significant amount of time in standby mode, require electrical circuits

FM28V020-SG

Abstract: FM28V020-SGTR FM28V020 FM18L08
Contextual Info: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V020-SG

Abstract: FM18L08 FM28V020 FM28V020-SGTR FM28V020-T FM28V020-TGTR
Contextual Info: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V020-TG

Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM21L16

Contextual Info: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process

AN1014

Abstract: APP1014 MAX1692 MAX1729 MAX1749 MAX1879 1014 battery dc-dc-converter blockdiagram
Contextual Info: Maxim > App Notes > BATTERY MANAGEMENT POWER-SUPPLY CIRCUITS Keywords: portable power supply, wireless contact manager, shockfish SA, shockfish, PDA, Spotme, Max1879, max1729, max1749, max1692, portable power Mar 27, 2002 APPLICATION NOTE 1014 Design Case Study: Designing a Power Supply for a Portable, Wireless Contact

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

fm18W08-pg

Abstract: FM18W08
Contextual Info: FM18W08 PDIP 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process

FM28V010

Abstract: 16KX8 16kx8 ram FM28V020
Contextual Info: Preliminary FM28V010 128Kbit Bytewide F-RAM Memory Features 128Kbit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

TSOP-II 44 layout

Abstract: FM28V102
Contextual Info: Preliminary FM28V102 1Mbit 64Kx16 F-RAM Memory FEATURES 1Mbit Ferroelectric Nonvolatile RAM Organized as 64Kx16 Configurable as 128Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process

FM28V020-SG

Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SGTR
Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM28V100

Contextual Info: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

FM28V100-TG

Abstract: FM28V100 FM28V100-T FM18L08 FM20L08 A16-A3
Contextual Info: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: n FM16W08 PDIP 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention @ +75C NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

FM28V202

Abstract: FM28V202TG TSOP-II 44 Recommended PCB Footprint
Contextual Info: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process

FM22L16-55-TG

Abstract: FM20L08 FM22L16 256KX16
Contextual Info: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process